data storage magnetoresistive random access memory

Brand Name:Original

Model Number:MR0A08BCYS35

Place of Origin:Original

... 35 ns read/write cycle • SRAM compatible timing • Native non-volatility • Unlimited read & write endurance • Data always non-volatile for

Brand Name:Micron Technology

Model Number:MT53D1024M32D4DT-053 AIT:D

Place of Origin:USA

... Random Access Memory Type: SDRAM Mobile - LPDDR4 Installation style: SMD/SMT Package / Box: VFBGA-200 Data bus width: 32 bit Tissue: 1G x 32 Storage capacity: 32 Gbit Maximum Clock Frequency: 1.866 GHz Supply Voltage - Max: 1.1 V

Brand Name:SKHYNIX

Model Number:H9HCNNNBPUMLHR- NMO

Place of Origin:KOREA

... Four generations of low power double data rate synchronous dynamic random access memory Product Usage LPDDR is arguably the most widely used "working memory" memory for mobile devices worldwide. Low Power Double Data Rate SDRAM, a type of DDR SDRAM, also...

Brand Name:Microchip Technology

Model Number:AT24CS08-STUM-T

Place of Origin:original

...Memory for High Performance Data Storage Product Description: The AT24CS08-STUM-T is a Flash Memory chip that provides 8-Kbit of memory in a small, low-power 8-pin package. It features an I2C® serial interface and is capable of storing up to 1024 bytes of data. The device is organized as 128 pages of 8 bytes each and can be accessed using the device’s random access...

Brand Name:Oem Memory Brand

Model Number:Memory card

Place of Origin:China Shenzhen

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Brand Name:TE

Model Number:4-2394070-3

Place of Origin:USA

...Storage is designed for long-term data storage and can offer a reliable, high-capacity storage solution. It is a non-volatile storage device with integrated circuit memory, which offers a large capacity of 2Gb of storage. It is built for a fast access time with a data transfer rate of 1.8ms and a data retention rate of 166MHz, helping to ensure that data...

Brand Name:ISSI

Model Number:IS42S16400F-6TL

Memory Data Storage Semiconductors Memory ICs DRAM IS42S16400F-6TL 16 Bit Product Range Memory Data Storage Semiconductors Memory ICs DRAM IS42S16400F-6TL DRAM 64M, 3.3v, SDRAM, 4Mx16 16 bit App Characteristics Clock frequency: 200, 166, 143, 133 MHz Fully synchronous; all signals referenced to a positive clock edge Internal bank for hiding row access...

Categories:IC Integrated Circuits

Country/Region:china

...Memory & Data Storage Specifications Product Attribute Attribute Value Manufacturer: Alliance Memory Product Category: DRAM Type: SDRAM - DDR3L Mounting Style: SMD/SMT Package / Case: FBGA-78 Data Bus Width: 8 bit Organization: 128 M x 8 Memory Size: 1 Gbit Maximum Clock Frequency: 800 MHz Access...

Brand Name:Microchip

Model Number:24LC256T-E/SN

Place of Origin:Thailand

24LC256T-E/SN Microchip EEPROM Serial-I2C 256K-bit 32K x 8 3.3V/5V 8-Pin SOIC N T/R Product Technical Specifications EU RoHS Compliant ECCN (US) EAR99 Part Status Active Automotive No PPAP No Chip Density (bit) 256K Organization 32Kx8 Programmability Yes ...

Brand Name:Micron

Model Number:Micron Memory IC

Place of Origin:United States

Micron Memory IC Micron Memory IC Integrated Circuit Chips Electronics Components Micron Technology, Inc. is an American producer of computer memory and computer data storage including dynamic random-access memory, flash memory, and USB flash drives. It...

Brand Name:Alliance Memory, Inc.

Model Number:AS7C34098A-10JIN

...Random Access Memory (SRAM) device organized as 262,144 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access...

Place of Origin:PHILIPPINE

Brand Name:Qimonda AG

Model Number:HYB25DC512160DE-5

...configured as a quad-bank DRAM. The 512-Mbit Double-Data-Rate SDRAM uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2n prefetch architecture with an interface designed to transfer two

Brand Name:Original Factory

Model Number:W9825G6KH-6I

Place of Origin:CN

Memory IC Chip W9825G6KH-6I 256Mbit Parallel High Speed SDRAM Memory IC 54-TSOP​ Product Description Of W9825G6KH-6I W9825G6KH-6I is a high-speed synchronous dynamic random access memory (SDRAM), organized as 4M words x 4 banks x 16 bits. W9825G6KH delivers a data bandwidth of up to 200M words per second. Specification Of W9825G6KH-6I Memory Type Volatile Memory Format DRAM Technology SDRAM Memory Size 256Mbit Memory Organization 16M x 16 Memory

Brand Name:CYPRESS

Model Number:FM24CL04B

Place of Origin:Original Factory

... random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and

Brand Name:original

Model Number:FM1608-120

Place of Origin:Original Factory

...MEMORY Quick Detail: 64Kb Bytewide FRAM Memory Description: The FM1608 is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but operates in other respects as a RAM. It provides data...

Brand Name:CYPRESS

Model Number:FM24CL04B

Place of Origin:Original Factory

... random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and

Brand Name:Wisecard

Place of Origin:Shenzhen

... random number generation, in line with AIS31-P2 standard, ensuring that all transactions and information exchange are secure and protected. Memory security protection mechanism is a key feature of this Smart Card, allowing users to set access controls and

Model Number:FM24W256-G

Brand Name:Original

Place of Origin:US

...memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other nonvolatile memories...