diode transistor fdg6321c

Brand Name:Original

Model Number:FDG6321C

Place of Origin:Original

MOSFET FDG6321C Chips Diode Transistor Integrated Circuits PRODUCT DESCRIPTION MOSFET SC70-6 COMP N-P-CH PRODUCT PROPERTIES Manufacturer: onsemi Product Category: MOSFET Technology: Si Mounting Style: SMD/SMT Package / Case: SOT-323-6 Transistor Polarity...

Brand Name:INFEINEON

Model Number:SAK-TC234LP-32F200N AC

Place of Origin:Original Brand

... to you, please let us know. we are pleased to quote you our best price . Thank you ! A diode transistor IC (Integrated Circuit) is a type of electronic component that combines diodes and transistors into a single package. Diodes are electronic components

Brand Name:Central Semiconductor

Model Number:CMPT2484TRPBF

Place of Origin:CHINA

CMPT2484 Central Semiconductor Diode Transistors GP BJT NPN 60V 50mA 3-Pin SOT-23 Discrete Semiconductor Specification : Category Discrete Semiconductor Products 　 Diodes - Diode SCHOTTKY Part number CMPT2484TR Package Tape & Reel (TR) Part Status Active...

Brand Name:Diodes Incorporated

Model Number:B340A-13-F

Place of Origin:Shenzhen,China

B340A-13-F 40V 3A Schottky Diode Transistor Integrated Circuits​ Product description Part number B340A-13-F is manufactured by Diodes Incorporated Company and distributed by AYE. As one of the leading distributors of electronic products, we carry many ...

Brand Name:SAIKELI

Model Number:SMP100LC-35

Place of Origin:China

SMP100LC-35 SMB Transient Suppression Diode (TVS) SMP100LC-35 SMP100LC-35 Description The SMP100LC is a series of low capacitance transient surge arrestors designed for the protection of high data rate communication equipment. The low capacitance of the ...

Brand Name:ST

Model Number:BUF420AW

Place of Origin:Malaysia

BUF420AW Bipolar (BJT) Transistor NPN 450 V 30 A 200 W Through Hole TO-247-3 Features: ●STMicroelectronics PREFERRED SALESTYPE ●HIGH VOLTAGE CAPABILITY ●VERY HIGH SWITCHING SPEED ●MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION ●LOW BASE-DRIVE ...

Brand Name:Fanyi

Model Number:PWB Ruler

Place of Origin:Guangdong, China

...Capacitor Chip IC SMD Diode Transistor Package PCB Engineering Ruler Product Descriptiom Brand Fanyi Item Multi-function PCB Ruler Color Matte Black,Green,Yellow,Black,Red,White Ruler marked Resistor,Capacitor,IC,SMD Diode Transistor Package Material FR4 ...

Brand Name:PEAKMETER

Model Number:830L

Place of Origin:China

Auto Ranging r AC/DC Voltage Current Ohm Capacitance Frequency Diode Transistor Audible Continuity Features of Handheld Digital Multimeter Back Light Hold button Fuse protection: F 250mA/ 25V Display: LCD, 1999 counts, updates 2-3/sec Overrange Indication...

Brand Name:STMicroelectronics

Model Number:STGWA19NC60HD GWA19NC60HD

...STGWA19NC60HD GWA19NC60HD ultrafast IGBT 31 A 600 V very fast IGBT with Ultrafast diode Transistors - IGBTs - Single 31 A, 600 V, very fast IGBT with Ultrafast diode Product details Description : This device is an ultrafast IGBT. It utilizes the advanced ...

Brand Name:TOS

Model Number:2SC3265Y

Place of Origin:Japan

2SC3265Y Rectifier Diode Transistor Electronics Components Chip IC Electronics Low Frequency Power Amplifier Applications Power Switching Applications • High DC ...

Place of Origin:United States

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Categories:Transistors - FETs, MOSFETs - Arrays

Country/Region:china

... refer to the data sheet, such as PDF files Docx documents, etc. We have FDG6321C high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our ...

Place of Origin:China

Brand Name:ONSEMI

Model Number:FDG6321C

..., specialize in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor,IGBT,PCBA, prototype,BOM Kitting. Sunbeam Electronics has a solid team for R&D

Place of Origin:Original

FDG6321C Specifications Part Status Active FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 500mA, 410mA Rds On (Max) @ Id, Vgs 450 mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id 1.5V @ ...

Brand Name:TOSHIBA

Model Number:2SC5027

Place of Origin:CHINA

2SC5027 General Purpose Rectifier Diode TRANSISTOR SILICON NPN TRIPLE DIFFUSED HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATIONS * High Voltage :VCEO = 300V * Small Collector ...

Model Number:NTTFS3A08PZTAG

Place of Origin:America

Brand Name:ON

...Transistors FETs MOSFETs Single P-CH 20V 9A 8WDFN P-Channel Products Description: 1. -20V,-15A,6.7 Mω, P-channel power MOSFET 2. P-channel 20V 9A (Ta) 840mW (Ta) Surface Mount 8-wdfn (3.3x3.3) 3. Trans MOSFET P-CH 20V 22A 8-Pin WDFN EP T/R 4. components -20V,-15A,6.7m ,P channel power MOSFETMOS NTTFS3A08PZTAG Improve Your Efficiency: One- Stop Electronic Components BOM List Kitting Service IC Diode Transistor...

Brand Name:ON/Fairchild

Model Number:G40N60UFD

Place of Origin:Original Factory

G40N60UFD Ultra fast IGBT Transistor N-Channel with Built in Diode 600V 40A 160W, TO-3P Descriptions: Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for ...

Brand Name:Infineon

Model Number:IKW15N120T2

Place of Origin:Original Factory

...15 A TRENCHSTOP™ IGBT co-packed with free-wheeling diode in a TO-247 package provides significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of ...

Brand Name:VISHAY

Model Number:HFA08TB60

Place of Origin:Original

... power loss in diode and switching transistor • Higher frequency operation • Reduced snubbing • Reduced parts count DESCRIPTION HFA08TB60 is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced

Place of Origin:US

Brand Name:Original

Model Number:MBR20100CTL

Product Detail Packaging Tube Part Status Active Diode Configuration 1 Pair Common Cathode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 100V Voltage - Forward (Vf) (Max) @ If 900mV @ 10A Speed Fast Recovery =< 500ns, > 200mA (Io) Current - Reverse ...