dual n channel mosfet jy2605m

Brand Name:onsemi

Model Number:FDMC86261P

Place of Origin:original

Semiconductor FDMC86261P Ultra-Low On-Resistance Dual N-Channel MOSFET with High Current and Power Density Capabilities 150V FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150 V Current - Continuous Drain (Id) @ 25°C 2....

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:8205A

...23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low ...

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:8205A

...23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low ...

Place of Origin:China

Brand Name:ONSEMI

Model Number:FDMS1D2N03DSD

High Power MOSFET FDMS1D2N03DSD Power Clip Asymmetric Dual N-Channel MOSFET, 30 V [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize...

Brand Name:Anterwell

Model Number:IRF7311TRPBF

Place of Origin:original factory

...MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs...

Model Number:IRF7311TRPBF

Place of Origin:original factory

...MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs...

Model Number:D2003UK

Place of Origin:Malaysia

Brand Name:KAIGENG

D2003UK N/A Electronic Components IC MCU Microcontroller Integrated Circuits D2003UK #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:...

Brand Name:JUYI

Model Number:JY2605M

Place of Origin:China

JY2605M Dual N Channel Enhancement Mode Power MOSFET For BLDC Motor Controller GENERAL DESCRIPTION The product utilizes the latest trench processing techniques to achieve the high cell density and ...

Brand Name:JUYI

Model Number:JY2605M

Place of Origin:China

JY2605M Dual N Channel Enhancement Mode Power surface mount MOSFET for BLDC motor driver GENERAL DESCRIPTION The product utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with low gate charge...

Brand Name:original

Model Number:DMN5L06DWK7

Place of Origin:original

DMN5L06DWK7 MOSFET Dual N Channel 2 Channel Small Signal kdk smd transistors surface mode transistors Features  Dual N-Channel MOSFET  Low On-Resistance (1.0V Max)  Very Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low ...

Brand Name:JUYI

Model Number:JY2605M

Place of Origin:China

General Description: The product utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device...

Brand Name:NXP

Model Number:BUK7K6R2-40EX

Place of Origin:NXP

...Dual N Channel 40V Mosfet BUK7K6R2-40EX MOSFET Dual N-channel 40V Mosfet LFPAK-33-8 SMD/SMT 5.8 mOhms- 20 V, + 20 V Manufacturer: Nexperia Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: LFPAK-33-8 Transistor Polarity: N-Channel Number of Channels: 2 Channel...

Brand Name:Original Factory

Model Number:PMDXB600UNE

Place of Origin:CN

... ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Specification Of PMDXB600UNE Product Status Active FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss)

Brand Name:original

Model Number:SI6926DQ

Place of Origin:Original Manufacturer

...DUAL N-CHANNEL 2.5V SPECIFIED POWERTRENCH MOSFET Detailed Product Description High Light: power led driver circuit , offline led driver ic Quick Detail: Dual N-Channel 2.5V Specified PowerTrench MOSFET Description: This N-Channel 2.5V specified MOSFET is ...

Brand Name:FORTUNE

Model Number:FS8205A

Place of Origin:TAIWAN

FS8205A Dual N-Channel Enhancement-Mode MOSFET (20V, 6A) 1.Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage...

Place of Origin:PHILIPPINE

Brand Name:Fairchild Semiconductor

Model Number:SI6926DQ

Quick Detail: Dual N-Channel 2.5V Specified PowerTrench MOSFET Description: This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications...

Brand Name:Microchip Technology

Model Number:TC4426EOA713

Place of Origin:Philippines

...Dual Inverting Power MOSFET Drivers Integrated circuits IC PMIC TC4426 TC4427 TC4428 Microchip 1.5A Dual Inverting Power MOSFET Drivers Integrated circuits IC TC4426EOA713 TC4426EOA713 Specification: Part number TC4426EOA713 Category Integrated Circuits (ICs) 　 PMIC - Gate Drivers Mfr Microchip Technology Series - Package Tape & Reel (TR) Part Status Active Driven Configuration Low-Side Channel...

Brand Name:CJ

Model Number:CJ2310 S10

Place of Origin:CHINA

CJ2310 S10 NPN PNP Transistors N-Channel MOSFET Plastic-Encapsulate MOSFETS DESCRIPTION The CJ2310 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for ...

Brand Name:Original

Model Number:IRF7329TRPBF

Place of Origin:Original

MOSFET IRF7329TRPBF Chips Diode Transistor Integrated Circuits PRODUCT DESCRIPTION MOSFET MOSFT DUAL PCh -12V 9.2A PRODUCT PROPERTIES Manufacturer: onsemi Product Category: MOSFET Technology: Si Mounting Style: SMD/SMT Package / Case: SOT-323-6 Transistor Polarity: N-Channel, P-Channel Number of Channels: 2 Channel Vds - Drain-Source Breakdown Voltage: 25 V Manufacturer: Infineon Product Category: MOSFET...

Brand Name:onsemi

Model Number:FDS3992

Place of Origin:United States

FDS3992 Mosfet Array 100V 4.5A 2.5W Surface Mount 8-SOIC Datasheet:FDS3992 Category FET, MOSFET Arrays Mfr onsemi Series PowerTrench Product Status Active Technology MOSFET (Metal Oxide) Configuration 2 N-Channel (Dual) Drain to Source Voltage (Vdss) 100V ...