dual p channel high power mosfet

Place of Origin:China

Brand Name:Lingxun

...Channel High Power MOSFET Surface Mount Industrial Mosfet Transistor Product Description: Our High Power MOSFET is designed to operate in a wide temperature range, from -55°C to +175°C, making it suitable for use in extreme environments. Its N-type configuration ensures optimal performance, providing high efficiency and reliability. Our High Power MOSFET...

Place of Origin:China

Brand Name:ONSEMI

Model Number:FDH047AN08A0

High Power MOSFET FDH047AN08A0 N-Channel PowerTrench^® MOSFET 75V, 80A, 4.7mΩ High Power MOSFET FDH047AN08A0 N-Channel PowerTrench® MOSFET 75V, 80A, 4.7mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors ...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

...h as Solar Inverter, High-voltage DC/DC Converter, Motor Driver, UPS Power Supply, Switching Power Supply and Charging Pile. This MOSFET is capable of handling high current and delivering maximum performance with its low on-resistance. It is also known as

Brand Name:HT

Model Number:F16N65L TO-220F-3L

Place of Origin:China

... power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

Brand Name:Anterwell

Model Number:FDS6990A

Place of Origin:original factory

...Power Mosfet Transistor Dual N Channel Logic PowerTrench MOSFET General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power...

Brand Name:FORTUNE

Model Number:FS8205A

Place of Origin:TAIWAN

...Dual N-Channel Enhancement-Mode MOSFET (20V, 6A) 1.Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V) 2.Features RDS(on)=38mΩ@VGS=2.5V, ID=5.2A; RDS(on)=25mΩ@VGS=4.5V, ID=6A • High Density Cell Design for Ultra Low On-Resistance • High Power...

Brand Name:Original Factory

Model Number:NTMFD5C470NLT1G

Place of Origin:CN

...Channel NTMFD5C470NLT1G Power MOSFET Transistor 8-DFN Integrated Circuit Chip Product Description Of NTMFD5C470NLT1G NTMFD5C470NLT1G is Dual N-Channel 40V, 11.511.5mOhm, 36A Power MOSFET Transistors. Specification Of NTMFD5C470NLT1G Part Number NTMFD5C470NLT1G Technology MOSFET (Metal Oxide) Configuration 2 N-Channel (Dual...

Model Number:FDS6990A

Place of Origin:original factory

...Power Mosfet Transistor Dual N Channel Logic PowerTrench MOSFET General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power...

Brand Name:Huixin

Model Number:H10N65

Place of Origin:China

N Channel High Voltage Mosfet 650V 10A High Accuracy RoHS Compliant TO-220F Applications Adapter & Charger SMPS Standby Power AC-DC Switching Power Supply LED driving power Features Low On Resistance Low Gate Charge Peak Current vs Pulse Width Curve RoHS ...

Brand Name:onsemi

Model Number:FDN360P

Place of Origin:original

FDN360P MOSFET Power Electronics SOT-23-3 Package Single P-Channel High Power Version of Industry Standard FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 2A (Ta) Drive Voltage (...

Brand Name:original

Model Number:CLA50E1200HB

Place of Origin:Original Factory

...HIGH POWER MOSFET TRANSISTORS / THYRISTOR FOR LINE FREQUENCY 1200V 50A Goods Condition: Brand New Part Status: Active Lead Free / Rohs: Complaint Function: Circuit Control Mounting Type: Through Hole Package: TO247 High Light: n channel mosfet transistor , n channel transistor CLA50E1200HB High...

Place of Origin:PHILIPPINE

Brand Name:Fuji Electric

Model Number:FMH23N50E

...power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Specifications: part no

Brand Name:YOUCii

Model Number:U8722B

Place of Origin:CHINA

U8722B Dual-Channel High-Power Optical Power Meter Small Size Fast Start Model # U8722B U8724B U8728B Number of Channels 2 4 8 Sensor Element InGaAs Wavelength Range 850 ~ 1700 nm Calibration Wavelength 1310/1490/1550/1625 Power Range +25~-55dBm Sampling ...

Brand Name:Original brand

Model Number:NVHL040N65S3F

Place of Origin:Original

... to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is

Brand Name:Hua Xuan Yang

Model Number:AOD442

Place of Origin:ShenZhen China

AOD442/AOI442 60V N-Channel MOSFET General Description The AOD442/AOI442 used advanced trench technology to provide excellent R DS(ON) and low gate charge. Those devices are suitable for use as a load switch or in PWM applications. Parameters Part Number ...

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:8205A

...MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and Current Handing Capability z Surface Mount Package APPLICATION z Battery Protection z Load Switch z Power...

Brand Name:JUYI

Model Number:JY2605M

Place of Origin:China

...density and reduces the on-resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. FEATURES ● 60V/50A, RDS(ON)

Brand Name:ON Semiconductor

Model Number:NCS20074DTBR2G

... two N-channel MOSFETs or IGBTs in a half-bridge configuration. Its fast rise and fall time (15ns typical) and wide input voltage range (4.5V to 18V) make it ideal for high-frequency switching applications. Applications: DC-DC Converters, Motor Drives,

Brand Name:IXYS

Model Number:IXFK27N80Q

Place of Origin:Original Factory

IXFK27N80Q N Channel Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS advanced low Qg process • Low ...

Brand Name:CJ

Model Number:CJ2310 S10

Place of Origin:CHINA

...Channel MOSFET Plastic-Encapsulate MOSFETS DESCRIPTION The CJ2310 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. FEATURE  High power...