dual p channel mosfet 20v

Place of Origin:China

Brand Name:ONSEMI

Model Number:FDMA1023PZ

High Power MOSFET FDMA1023PZ Dual P-Channel PowerTrench^® MOSFET -20V , -3.7A, 72mΩ High Power MOSFET FDMA1023PZ Dual P-Channel PowerTrench® MOSFET -20V , -3.7A, 72mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:8H02ETS

20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) < 28mΩ @ VGS...

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:8H02ETS

20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) < 28mΩ @ VGS...

Brand Name:onsemi

Model Number:FDMC86261P

Place of Origin:original

Semiconductor FDMC86261P Ultra-Low On-Resistance Dual N-Channel MOSFET with High Current and Power Density Capabilities 150V FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150 V Current - Continuous Drain (Id) @ 25°C 2....

Brand Name:Anterwell

Model Number:IRF7311TRPBF

Place of Origin:original factory

...MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs...

Model Number:IRF7311TRPBF

Place of Origin:original factory

...MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs...

Model Number:D2003UK

Place of Origin:Malaysia

Brand Name:KAIGENG

D2003UK N/A Electronic Components IC MCU Microcontroller Integrated Circuits D2003UK #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:...

Brand Name:Original Factory

Model Number:PMDXB600UNE

Place of Origin:CN

... ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Specification Of PMDXB600UNE Product Status Active FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss)

Brand Name:onsemi

Model Number:FDC608PZ

Place of Origin:USA

...: P-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 5.8 A Rds On - Drain-Source Resistance: 30 ...

Brand Name:FORTUNE

Model Number:FS8205A

Place of Origin:TAIWAN

FS8205A Dual N-Channel Enhancement-Mode MOSFET (20V, 6A) 1.Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage...

Brand Name:ON

Model Number:NTTFS3A08PZTAG

Place of Origin:America

...MOSFETs Single P-CH 20V 9A 8WDFN P-Channel Products Description: 1. -20V,-15A,6.7 Mω, P-channel power MOSFET 2. P-channel 20V 9A (Ta) 840mW (Ta) Surface Mount 8-wdfn (3.3x3.3) 3. Trans MOSFET P-CH 20V 22A 8-Pin WDFN EP T/R 4. components -20V,-15A,6.7m ,P channel...

Brand Name:Vishay

Model Number:SI3900DV-T1-E3

...) FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25° C 2A Rds On (Max) @ Id, Vgs 125 mOhm @ 2.4A, 4.5V Vgs(...

Brand Name:Diodes

Model Number:DMN26D0UFB4-7

Place of Origin:UAS

... MOSFET ENHANCE MODE MOSFET 20V N-Chan X2-DFN1006 DMN26D0UFB4-7B Manufacturer: Diodes Incorporated Product Category: MOSFET Technology: Si Installation style: SMD/SMT Package/Box: X2-DFN1006-3 Transistor polarity: N-Channel Number of channels: 1 Channel ...

Brand Name:onsemi

Model Number:NTZD3154NT1G

...20V 570mA N Channel MOSFET SMD SMT Mounting Style NTZD3154NT1G ,onsemi ,MOSFET , SOT-563-6 , 2 N-Channel , NTZD3154N , 20 V , 570 mA , Product Attribute Attribute Value Manufacturer: onsemi Product Category: MOSFET Technology: Si Mounting Style: SMD/SMT Package / Case: SOT-563-6 Transistor Polarity: N-Channel Number of Channels: 2 Channel...

Brand Name:Vishay

Model Number:SI2333DDS-T1-GE3

Place of Origin:China

...MOSFET andbull; 100 % Rg Tested andbull; Material categorization: For definitions of compliance please see andnbsp; APPLICATIONS andbull; Smart Phones and Tablet PCs - Load Switch - Battery Switch andnbsp; Overview The Sl2333DDS-T1-GE3 is an advanced 20V P-channel MOSFET...

Brand Name:original

Model Number:DMN5L06DWK7

Place of Origin:original

DMN5L06DWK7 MOSFET Dual N Channel 2 Channel Small Signal kdk smd transistors surface mode transistors Features  Dual N-Channel MOSFET  Low On-Resistance (1.0V Max)  Very Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low ...

Place of Origin:US

Brand Name:Original

Model Number:SI2399DS-T1-GE3

Product Detail Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, ...

Brand Name:Diodes Incorporated

Model Number:W5500

Place of Origin:Taiwan

... Products 　 Transistors - FETs, MOSFETs - Single Mfr Diodes Incorporated Series MOSFET Package Tape & Reel (TR) Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id)

Brand Name:Infineon Technologies

Model Number:SPD06N80C3

Place of Origin:CHINA

... Vgs(th) (Max) @ Id 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 785pF @ 100V FET Feature -

Brand Name:JUYI

Model Number:JY2605M

Place of Origin:China

JY2605M Dual N Channel Enhancement Mode Power surface mount MOSFET for BLDC motor driver GENERAL DESCRIPTION The product utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with low gate charge...