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All emi superjunction power mosfet wholesalers & emi superjunction power mosfet manufacturers come from members. We doesn't provide emi superjunction power mosfet products or service, please contact them directly and verify their companies info carefully.
| Total 415 products from emi superjunction power mosfet Manufactures & Suppliers |
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Brand Name:REASUNOS Place of Origin:Guangdong, CN Ultra Small Package Superjunction Power MOSFET with Large EMI Margin *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: antialiased; } img, picture, video, canvas, ... |
Reasunos Semiconductor Technology Co., Ltd.
Guangdong |
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Brand Name:Infineon Technologies Model Number:SPW11N80C3FKSA1 Place of Origin:Multi-origin Listing for SPW11N80C3FKSA1 MOSFET Power Electronics Product: SPW11N80C3FKSA1 MOSFET Power Electronics Features: - 800V N-Channel Superjunction MOSFET - Low Gate Charge (Qg) - Low On-State Resistance (Rdson) - High Current Capability - Low Inter-Drain ... |
Shenzhen Sai Collie Technology Co., Ltd.
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Brand Name:VISHAY Model Number:HFA08TB60 Place of Origin:Original ... at operating conditions • Designed and qualified for industrial level BENEFITS • Reduced RFI and EMI • Reduced power loss in diode and switching transistor • Higher frequency operation • Reduced snubbing • Reduced parts count DESCRIPTION HFA08TB60... |
Anterwell Technology Ltd.
Guangdong |
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Brand Name:HT Model Number:F4N65L TO-220F-3L Place of Origin:China ...POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F4N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power |
Shenzhen Hunt Electronics Co., Ltd
Guangdong |
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Place of Origin:China Brand Name:ONSEMI Model Number:FDI045N10A High Power MOSFET FDI045N10A N-Channel PowerTrench® MOSFET 100V, 164A, 4.5mΩ High Power MOSFET FDI045N10A N-Channel PowerTrench® MOSFET 100V, 164A, 4.5mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors ... |
Sunbeam Electronics (Hong Kong) Limited
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Brand Name:BONENS Model Number:DAP2 Place of Origin:Sichuan, China ... power supply filter 1A 6A 3A 10A PCB mounting single phase EMI EMC power filter product name: DAP2 1A 3A 6A 10A PCB mounting single phase EMI EMC power filter emi filters pcb mount noise filter for amplifier Product introduction: The DAP2 series EMI power... |
Sichuan Qixing Electronics Co., Ltd.
Sichuan |
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Brand Name:YBX Model Number:YB11A1-3A-S Place of Origin:China EMI EMC Power Low Pass Filter For Medical Equipment 3A 120V/250V Technical Specification: Item Emi Power Filter Model Emi Power Filter YB-A Transfer Function Low Pass Package Type Surface Mount Nominal Center Frequency 10K-30MHZ Insertion Loss 60~90dB ... |
Shenzhen Yanbixin Technology Co., Ltd.
Guangdong |
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Brand Name:IXYS Model Number:IXFK27N80Q Place of Origin:Original Factory IXFK27N80Q N Channel Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS ... |
Shenzhen Retechip Electronics Co., Ltd
Guangdong |
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Brand Name:IOR Model Number:IRFZ44NPBF Place of Origin:CHINA ...POWER MOSFET 55V 49A 94W Through Hole TO-220 Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs... |
Shenzhen Koben Electronics Co., Ltd.
Guangdong |
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Brand Name:STMicroelectronics Model Number:STP100N8F6 Place of Origin:Shenzhen, China ...MOSFET N-channel 80 V, 0.008 Ohm type, 100 A, STripFET F6 Power MOSFET in a TO-220 package General Description : This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Distinctive Characteristics : Part No: STP100N8F6 Description: Trans MOSFET N-CH 80V 100A 3-Pin(3+Tab) TO-220 Tube Product Category Power |
Shenzhen Weitaixu Capacitor Co.,Ltd
Guangdong |
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Brand Name:Hua Xuan Yang Model Number:2N60 Place of Origin:ShenZhen China ...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. |
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong |
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Brand Name:IR Original Model Number:IR21094STRPBF Place of Origin:Original & New IR21094STRPBF high voltage, high speed power MOSFET and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS... |
Shenzhen ATFU Electronics Technology ltd
Guangdong |
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Model Number:IRF640NPBF Place of Origin:original factory ...HEXFET® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free Description Fifth Generation HEXFET® Power MOSFETs from ... |
ChongMing Group (HK) Int'l Co., Ltd
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Brand Name:Texas Instruments Model Number:TPSM560R6RDAR ... TNT Application: Driver/Controller Whatsapp: 86-15007558828 High Light: Controller Power Management ICs , EMI Power Management ICs , TPSM560R6RDAR Power Management ICs Texas Instruments/TI TPSM560R6RDAR Iout (Max) (A) 0.6 Vin (Min) (V) 4.2 Vin (Max) (V) |
Guangzhou Topfast Technology Co., Ltd.
Guangdong |
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Brand Name:original Model Number:M68702H Place of Origin:Original Manufacturer ...POWER MOSFET TRANSISTORS M68702H FOR FM MOBILE RADIO Condition: 100% Brand New Product Part Status: Active Package: H2 Lead Free Status / RoHS Status: Compliant Output Power: 60W Voltage: 12.5V High Light: n channel mosfet transistor , n channel transistor M68702H 150-175MHz, 12.5V, 60W, RF Power... |
Shenzhen Huahao Gaosheng Technology Co., Ltd
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Brand Name:Shareway Model Number:742792901 Place of Origin:Guangdong China ...a wide frequency range Operating temperature: –40 ºC to +125 ºC Applications Interference suppression in motors Switch mode PSUs Power electronics Electrical Properties: Properties Test conditions Value Unit Tol. Maximum Impedance Zmax 90 MHz 2900 Ω |
SHAREWAY TECHNOLOGY CO., LTD.
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Place of Origin:PHILIPPINE Brand Name:Fuji Electric Model Number:FMH23N50E ...power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing ... |
Mega Source Elec.Limited
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Brand Name:VIIP WeiAiPu Model Number:VIP3-32B-50 Place of Origin:China ...EMI Filter Three Phase Line Filter For Power Management System Description: 1, Rated currents from 0.5 to 2000A 2, High attenuation performance up to 30 MHz 3, Voltage rating 440VAC for worldwide acceptance 4, Approvals: CE, ROHS 5, 520V AC ,690V AC can be optional Specification: Item 3 Phase EMI Filter Model 3 Phase EMI... |
Shenzhen VIIP Electronics Co., Ltd.
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Brand Name:JUYI Model Number:JY09M Place of Origin:China ... density and reduces the on-resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. |
Shanghai Juyi Electronic Technology Development Co., Ltd
Shanghai |
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Brand Name:Original Factory Model Number:SCTWA50N120 Place of Origin:CN 1200V MOSFET SCTWA50N120 N-Channel Silicon Carbide Power MOSFET Through Hole HiP247 Product Description Of SCTWA50N120 SCTWA50N120 Silicon carbide Power MOSFET 1200 V, 65 A, 59 mΩ (typ., TJ=150 °C) in an HiP247™ long leads package. Specification Of ... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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