fets mosfets high voltage

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

...High Power MOSFET is an advanced semiconductor device designed to meet the demanding requirements of modern electronic applications. As a high power n channel MOSFET, this product is engineered to deliver exceptional performance in a variety of high-stress environments, making it an ideal choice for applications such as solar inverters, high-voltage...

Brand Name:KUNSHAN

Place of Origin:china

Product Description: The Energy Storage Connector is a high-performance component specifically designed to meet the demanding requirements of modern energy storage systems. Engineered for reliability and efficiency, this connector is an essential element...

Brand Name:MITSUBISHI

Model Number:RD06HVF1

Place of Origin:Original

... High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets. RoHS COMPLIANT RD06HVF1-101 is a RoHS compliant products. RoHS ...

Brand Name:Infineon Technologies

Model Number:IRFB7446PBF

Place of Origin:Multi-origin

...: -55°C to 175°C Mounting Type: Through Hole Rise Time: 4.5ns Fall Time: 3.5ns Threshold Voltage: 4V Drain Source On Resistance: 0.0038 Ohms Drain Source Capacitance: 180pF Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to

Brand Name:PANJIT

Model Number:ER1004FCT

Place of Origin:Original

...Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, high current capability • High surge capacity. • Super fast recovery times, high voltage. • Pb free product are

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:FR301 THRU FR307

... Voltage - 50 to 1000 Volts Forward Current - 3.0 Amperes FEATURE The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Fast switching for high efficiency Low reverse leakage High forward surge current capability High ...

Brand Name:OTOMO

Model Number:1503C1

Place of Origin:ShenZhen China

..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the

Brand Name:VISHAY

Model Number:SIHB22N60E-E3

Place of Origin:CHINA

... N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 21A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 180 mOhm @ 11A, 10V Vgs(th)

Brand Name:original

Model Number:SIHB22N60E-E3

Place of Origin:Original Manufacturer

HIGH VOLTAGE SINGLE MOSFET POWER TRANSISTOR SIHB22N60E - E3 600V 21A PACKAGE D2PAK FET Type: N-channel Operating Temperature: -55°C ~ 150°C (TJ) Package: TO263-3 D2PAK High Light: n channel mosfet transistor , n channel transistor High Voltage Single Mosfet Power Transistor SIHB22N60E - E3 600V 21A Package D2PAK MSL 1 SINGLE N-CHANNEL MOSFETS...

Brand Name:STMicroelectronics

Model Number:STW9N150

... Oxide) Drain to Source Voltage (Vdss) 1500 V Current - Continuous Drain (Id) @ 25°C 8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.5Ohm @ 4A, 10V Vgs(th) (Max) @ ...

Brand Name:Infineon Technologies/International Rectifier IOR

Model Number:IRF1404ZPBF

Place of Origin:CHINA

...Transistors - FETs, MOSFETs - Single Mfr Infineon Technologies Series HEXFET® Package Tube FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40 V Current - Continuous Drain (Id) @ 25°C 180A (Tc) Drive Voltage (Max Rds On,

Brand Name:Infineon Technologies/International Rectifier IOR

Model Number:IRF1404ZPBF

... Hole TO-220AB Specification: Category Discrete Semiconductor Products 　 Transistors - FETs, MOSFETs - Single Mfr Infineon Technologies Series HEXFET® Package Tube FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss)

Brand Name:Original Factory

Model Number:IMZ120R140M1H

Place of Origin:CN

... is TO-247-4, Through Hole. Specification Of IMZ120R140M1H Part Number IMZ120R140M1H FET Type N-Channel Technology SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 1200 V Current - Continuous Drain (Id) @ 25°C 19A (Tc) Drive Voltage (Max Rds On

Brand Name:Huixin

Model Number:H10N65

Place of Origin:China

N Channel High Voltage Mosfet 650V 10A High Accuracy RoHS Compliant TO-220F Applications Adapter & Charger SMPS Standby Power AC-DC Switching Power Supply ...

Brand Name:JUYI

Model Number:JY21L

Place of Origin:China

...IGBT driver based on P-SUB P-EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT independently which operates up to 150V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The

Place of Origin:Original

...FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 1.4A (Tc) Drive Voltage (Max Rds On,Min Rds On) - Vgs(th) (Max) @ Id 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 170pF @ 25V Vgs (Max) - FET...

Brand Name:onsemi

Model Number:FDA50N50

Place of Origin:Original Factory

FDA50N50 High Voltage Mosfet 48A 500V DMOS AC−DC Power Supply Transistor Description UniFET MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and...

Brand Name:ZMSH

Model Number:6Inch SiC Epitaxial Wafer

Place of Origin:CHINA

...High Voltage SiC Epitaxial Wafer Main Introduction 6Inch Ultra-High Voltage SiC Epitaxial Wafer 100–500 μm For MOSFET Devices This product is a high-purity, low-defect silicon carbide (SiC) epitaxial layer with a thickness ranging from 100 to 500 μm, grown on a 6-inch N-type 4H-SiC conductive substrate via high...

Brand Name:UCHI

Model Number:SGM8271/8272/8274

Place of Origin:Dongguan China

High Voltage Rail-to-RailOutput Operational Amplifiers Integrated Circuit IC The SGM8271 (single), SGM8272 (dual) and SGM8274(quad) are high voltage operational amplifiers, whichcan operate from 4.5V to 36V single supply or from±2.25V to ±18V dual power supplies. They provide awide input common mode voltage range and rail-to-railoutput voltage swing.The SGM8271/2/4 provide high...

Brand Name:INFINEON

Model Number:IPD90N06S4-04

Place of Origin:China

IPD90N06S4-04 TO-252 60V 90A FET MOSFET Silk screen 4N0604 Brand New and original Integrated Circuit chip PRODUCT DESCRIPTION Part number IPD90N06S4-04 is manufactured by INFINEON and distributed by Stjk. As one of the leading distributors of electronic ...