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All fets mosfets with high performance wholesalers & fets mosfets with high performance manufacturers come from members. We doesn't provide fets mosfets with high performance products or service, please contact them directly and verify their companies info carefully.
| Total 74 products from fets mosfets with high performance Manufactures & Suppliers |
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Brand Name:onsemi Model Number:FDMS039N08B Place of Origin:original FDMS039N08B Power MOSFET Transistor High Performance Low On-Resistance Ultra-Low Gate Charge Robust Switching Operation FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80 V Current - Continuous Drain (Id) @ 25°C 19.4A (Ta... |
Shenzhen Sai Collie Technology Co., Ltd.
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Brand Name:Fuji Electric Model Number:FLM0910-25F Place of Origin:JP FLM0910-25F RF Power Transistor X-Band Internally Matched FET DESCRIPTION The FLM0910-25F is a power GaAs FET that is internally matchedfor standard communication bands to provide optimum power and gain in a 50Ωsystem List Of Other Electronic Components... |
Shenzhen Koben Electronics Co., Ltd.
Guangdong |
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Brand Name:BigFlier Model Number:F-Program Box Place of Origin:ShenZhen ESC Parts Program Box for Fliermodel RC Air Car Boat Skate Ebike ESC By the Flier Program Box, you can set all of function value very simply.Setting procedure as follows: 1.Put the JR tip of ESC Plug in anyone of the 4PIN connector in Prog-Box. 2.Connect ... |
Shenzhen Flier Electronic Co., Ltd.
Guangdong |
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Brand Name:Original Factory Model Number:IMBG65R107M1H Place of Origin:CN ...FETs MOSFETs Transistors IMBG65R107M1H Integrated Circuit Chip Product Description Of IMBG65R107M1H IMBG65R107M1H provides an integrated ultra-fast body diode allowing usage in resonant topologies with the lowest reverse recovery charge. Specification Of IMBG65R107M1H Part Number: IMBG65R107M1H Channels: 1 Vds: 650 V Rds On: 42 MOhms Id: 63 A Vgs Th: 5.7 V Benefits Of IMBG65R107M1H Unique combination of high performance, high |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Lingxun Place of Origin:China ...MOSFET For High Power Application Product Description: One of the key features of this MOSFET is its very high commutation ruggedness, making it an ideal choice for applications where switching losses need to be minimized. In addition, its much lower Ron*A performance delivers exceptional on-state efficiency, improving overall power supply performance. With its superior performance... |
Guangdong Lingxun Microelectronics Co., Ltd
Guangdong |
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Brand Name:REASUNOS Place of Origin:Guangdong, CN High EAS Capability Low Rds(ON) MOSFET for High-frequency Switch Application *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: antialiased; } img, picture, video, ... |
Reasunos Semiconductor Technology Co., Ltd.
Guangdong |
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Brand Name:Hua Xuan Yang Model Number:HXY1404S Place of Origin:ShenZhen China ... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. 40V/12A R DS(ON) = 13mΩ(typ.) |
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong |
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Brand Name:Hua Xuan Yang Model Number:HXY1404S Place of Origin:ShenZhen China ... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. 40V/12A R DS(ON) = 13mΩ(typ.) |
Beijing Silk Road Enterprise Management Services Co.,LTD
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Brand Name:Ziitek Model Number:TIS800K Place of Origin:China High-Performance Semiconductor Electrical Insulating Sheet Thermal Conductive Silicone Gasket Sil Pad For IGBT Mosfet Products discription TIS®800K series is a thermal silicone product featuring a ceramic-filled layer coated on a polyimide film, offering excellent thermal conductivity and heat transfer performance... |
Dongguan Ziitek Electronic Materials & Technology Ltd.
Guangdong |
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Brand Name:Original brand Model Number:STO33N60M6 Place of Origin:Original Mosfet Power Transistor STO33N60M6 MOSFET N-channel 600 V, 105 mOhm typ., 26 A Feature • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected • High creepage package • Excellent switching performance thanks to the extra driving source pin Applications • Switching applications • LLC converters • Boost PFC converters Categories Mosfet... |
Shenzhen Weitaixu Capacitor Co.,Ltd
Guangdong |
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Brand Name:AD Model Number:AD8065WARTZ Place of Origin:brand new ...FET Op Amps optical integrated circuits AD8065WARTZ High Performance APPLICATIONS ►Automotive driver assistance systems ►Photodiode preamps ►Filters ►A/D drivers ►Level shifting ►Buffering FEATURES Wide supply voltage range: 5 V to 24 V Single-supply and rail-to-rail output Low offset voltage 1.5 mV maximum High... |
Anterwell Technology Ltd.
Guangdong |
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Brand Name:AD Model Number:AD8065WARTZ Place of Origin:brand new ...FET Op Amps optical integrated circuits AD8065WARTZ High Performance APPLICATIONS ►Automotive driver assistance systems ►Photodiode preamps ►Filters ►A/D drivers ►Level shifting ►Buffering FEATURES Wide supply voltage range: 5 V to 24 V Single-supply and rail-to-rail output Low offset voltage 1.5 mV maximum High... |
ChongMing Group (HK) Int'l Co., Ltd
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Brand Name:NXP Semiconductors Model Number:SI2304DS,215 Place of Origin:China ...MOSFET with Ultra-Low 45mandOmega; RDS(on) SOT-23 Package High Performance Enhanced Efficiency Power Management and Logic Level Gate Drive for Space-Constrained Designs andnbsp; Features TrenchMOSandtrade; technology Very fast switching Subminiature surface mount package. andnbsp; Applications Battery management High... |
TOP Electronic Industry Co., Ltd.
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Brand Name:WJ Model Number:FP2189 Quick Detail: high performance 1-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount Specifications: part no. FP2189 Manufacturer WJ supply ability 2643 datecode 05+ package SOT89 remark new and original stock Competitive Advantage: ... |
Mega Source Elec.Limited
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Brand Name:JUYI Model Number:JY4P7M Place of Origin:China ... device. It achieves a high cell density and effectively minimizes on‐resistance through the utilization of cutting-edge trench processing techniques. Additionally, the device features low gate charge, further enhancing its performance.ents. Get more |
Changzhou Bextreme Shell Motor Technology Co.,Ltd
Jiangsu |
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Brand Name:SURINGMAX Model Number:6 mosfets 14A/17A Place of Origin:CHINA Powerful 14A/17A controller with 6 mosfets for electric bicycle with direct price Specifications of our controller In order to better play the controller's performance and product stability, all of our controllers use imported power transistors. Rated ... |
Changzhou Suring motor technology CO.,LTD
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Brand Name:Haida Model Number:9007-HD Place of Origin:China ... evaluation in components such as optocouplers, magnetic couplers, IGBTs, MOSFETs, isolation substrates, and capacitors. This system performs precise partial discharge (PD) and withstand voltage tests, with a voltage output range of 0.1–10 kV and |
Hai Da Labtester
Guangdong |
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Place of Origin:China Brand Name:ONSEMI Model Number:SSN1N45B High Power MOSFET SSN1N45B Power MOSFET, N-Channel, B-FET, 450 V, 0.5 A, 4.25 Ω, TO-92 [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for ... |
Sunbeam Electronics (Hong Kong) Limited
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Brand Name:VISHAY Model Number:SUD50P06-15L-E3 Place of Origin:Original Manufacturer ...FET SERIES Goods Condition: Brand New Part Status: Active Lead Free / Rohs: Complaint Function: Mosfet Mounting Type: Surface Mount Package: TO-252 High Light: n channel mosfet transistor , n channel transistor SUD50P06-15L-E3 Integrated Circuit IC Chip MOSFET P-CH 60V 50A TO252 TrenchFET Series P-Channel 60 V (D-S), 175 °C MOSFET FEATURES 1, TrenchFET® Power MOSFET... |
Shenzhen Huahao Gaosheng Technology Co., Ltd
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Brand Name:Toshiba Model Number:TK100E06N1,S1X Place of Origin:JAPAN Product Description: TK100E06N1,S1X Power IC Chip is a high-performance, high-reliability TO-220-3 package semiconductor device designed to provide optimal performance and reliability for Power IC applications. It is manufactured by Toshiba, a leading ... |
Shenzhen Zhaocun Electronics Co., Ltd.
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