fets mosfets with high performance

Brand Name:onsemi

Model Number:FDMS039N08B

Place of Origin:original

FDMS039N08B Power MOSFET Transistor High Performance Low On-Resistance Ultra-Low Gate Charge Robust Switching Operation FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80 V Current - Continuous Drain (Id) @ 25°C 19.4A (Ta...

Brand Name:Fuji Electric

Model Number:FLM0910-25F

Place of Origin:JP

FLM0910-25F RF Power Transistor X-Band Internally Matched FET DESCRIPTION The FLM0910-25F is a power GaAs FET that is internally matchedfor standard communication bands to provide optimum power and gain in a 50Ωsystem List Of Other Electronic Components...

Brand Name:BigFlier

Model Number:F-Program Box

Place of Origin:ShenZhen

ESC Parts Program Box for Fliermodel RC Air Car Boat Skate Ebike ESC By the Flier Program Box, you can set all of function value very simply.Setting procedure as follows: 1.Put the JR tip of ESC Plug in anyone of the 4PIN connector in Prog-Box. 2.Connect ...

Brand Name:Original Factory

Model Number:IMBG65R107M1H

Place of Origin:CN

...FETs MOSFETs Transistors IMBG65R107M1H Integrated Circuit Chip Product Description Of IMBG65R107M1H IMBG65R107M1H provides an integrated ultra-fast body diode allowing usage in resonant topologies with the lowest reverse recovery charge. Specification Of IMBG65R107M1H Part Number: IMBG65R107M1H Channels: 1 Vds: 650 V Rds On: 42 MOhms Id: 63 A Vgs Th: 5.7 V Benefits Of​ IMBG65R107M1H Unique combination of high performance, high

Brand Name:Original

Model Number:FGA25N120

...FGA25N120 MOSFET is a game-changer. This power-packed MOSFET is designed to offer exceptional efficiency and reliability for high-performance electronic devices. Featuring an impressive rated voltage of 1200V, the FGA25N120 MOSFET can handle high levels of

Brand Name:Hua Xuan Yang

Model Number:HXY1404S

Place of Origin:ShenZhen China

... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. 40V/12A R DS(ON) = 13mΩ(typ.)

Brand Name:Hua Xuan Yang

Model Number:HXY1404S

Place of Origin:ShenZhen China

... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. 40V/12A R DS(ON) = 13mΩ(typ.)

Brand Name:AD

Model Number:AD8065WARTZ

Place of Origin:brand new

...FET Op Amps optical integrated circuits AD8065WARTZ High Performance APPLICATIONS ►Automotive driver assistance systems ►Photodiode preamps ►Filters ►A/D drivers ►Level shifting ►Buffering FEATURES Wide supply voltage range: 5 V to 24 V Single-supply and rail-to-rail output Low offset voltage 1.5 mV maximum High...

Brand Name:Ziitek

Model Number:TIS800K

Place of Origin:China

High-Performance Semiconductor Electrical Insulating Sheet Thermal Conductive Silicone Gasket Sil Pad For IGBT Mosfet Products discription TIS®800K series is a thermal silicone product featuring a ceramic-filled layer coated on a polyimide film, offering excellent thermal conductivity and heat transfer performance...

Brand Name:Original brand

Model Number:STO33N60M6

Place of Origin:Original

Mosfet Power Transistor STO33N60M6 MOSFET N-channel 600 V, 105 mOhm typ., 26 A Feature • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected • High creepage package • Excellent switching performance thanks to the extra driving source pin Applications • Switching applications • LLC converters • Boost PFC converters Categories Mosfet...

Brand Name:NXP Semiconductors

Model Number:SI2304DS,215

Place of Origin:China

...MOSFET with Ultra-Low 45mandOmega; RDS(on) SOT-23 Package High Performance Enhanced Efficiency Power Management and Logic Level Gate Drive for Space-Constrained Designs andnbsp; Features TrenchMOSandtrade; technology Very fast switching Subminiature surface mount package. andnbsp; Applications Battery management High...

Brand Name:AD

Model Number:AD8065WARTZ

Place of Origin:brand new

...FET Op Amps optical integrated circuits AD8065WARTZ High Performance APPLICATIONS ►Automotive driver assistance systems ►Photodiode preamps ►Filters ►A/D drivers ►Level shifting ►Buffering FEATURES Wide supply voltage range: 5 V to 24 V Single-supply and rail-to-rail output Low offset voltage 1.5 mV maximum High...

Brand Name:WJ

Model Number:FP2189

Quick Detail: high performance 1-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount Specifications: part no. FP2189 Manufacturer WJ　 supply ability 2643 datecode 05+ package SOT89　 remark new and original stock Competitive Advantage: ...

Brand Name:JUYI

Model Number:JY4P7M

Place of Origin:China

... device. It achieves a high cell density and effectively minimizes on‐resistance through the utilization of cutting-edge trench processing techniques. Additionally, the device features low gate charge, further enhancing its performance.ents. Get more

Brand Name:ST

Model Number:STSPIN32G4

Place of Origin:CN

...High Performance 3-phase Motor Controller With Embedded STM32G4 MCU High performance 3-phase motor controller with embedded STM32G4 MCU Key Features Motor supply voltage from 5.5 V to 75 V Three-phase gate drivers: 1 A sink/source current capability VDS monitoring of the power stage MOSFETs...

Brand Name:SURINGMAX

Model Number:6 mosfets 14A/17A

Place of Origin:CHINA

Powerful 14A/17A controller with 6 mosfets for electric bicycle with direct price Specifications of our controller In order to better play the controller's performance and product stability, all of our controllers use imported power transistors. Rated ...

Brand Name:SEMIKRON

Model Number:SKKT460/22E

Place of Origin:Germany

SEMIKRON SKKT460/22E H4 2300V IGBT Module The SEMIKRON SKKT460/22E H4 is a high-performance Insulated Gate Bipolar Transistor (IGBT) module that combines MOSFET high input impedance with bipolar transistor low conduction loss for precise, efficient power ...

Brand Name:Haida

Model Number:9007-HD

Place of Origin:China

... evaluation in components such as optocouplers, magnetic couplers, IGBTs, MOSFETs, isolation substrates, and capacitors. This system performs precise partial discharge (PD) and withstand voltage tests, with a voltage output range of 0.1–10 kV and

Categories:Power Driver Modules

Country/Region:china

Power Driver Module MOSFET 1 Phase 40 A 31-PowerVFQFN Module

Brand Name:INFINEON

Model Number:IRF7342TRPBF

...applications requiring efficient switching and thermal performance. Product Overview The Infineon IRF7342TRPBF is an N-channel enhancement-mode MOSFET utilizing advanced trench gate technology. Designed for power management applications, it delivers low on