fets mosfets with high power

Brand Name:Lingxun

Place of Origin:China

...Power Consumption SMPS Super Junction MOSFET For High Power Application Product Description: One of the key features of this MOSFET is its very high commutation ruggedness, making it an ideal choice for applications where switching losses need to be minimized. In addition, its much lower Ron*A performance delivers exceptional on-state efficiency, improving overall power...

Brand Name:BigFlier

Model Number:F-22S-400A-B

Place of Origin:ShenZhen

RC Hobby Mosfet Waterproof High Power ESC 22S 400A With 12 Months Warranty Basic information: Voltage Current Size(mm) weight(g) BEC (Volts/Amps) Box Programming support Computer Programming support Firmware update 3-22S 400A 120*64*38mm 700g OPTO Yes Yes ...

Brand Name:Infineon Technologies

Model Number:IPD60R2K1CEAUMA1

Place of Origin:Multi-origin

IPD60R2K1CEAUMA1 MOSFET Power Electronics Product Description: The IPD60R2K1CEAUMA1 is a N-channel Power MOSFET, optimized for power switching applications. This device is designed using advanced Trench MOSFET technology for excellent RDS(ON) and low gate ...

Brand Name:ONSEMI

Model Number:MMBT4401LT1G

Place of Origin:Original

MMBT4401LT1G Switching Power Mosfet Transistor high power 225 mW PD High Voltage Transistors NPN Silicon ORDERING INFORMATION Device Order Number Package Type Shipping† MMBT4401LT1 SOT−23 (Pb−Free) 3,000 / Tape & Reel MMBT4401LT1G (Pb−Free) 3,000 / Tape & ...

Brand Name:Original brand

Model Number:STO33N60M6

Place of Origin:Original

Mosfet Power Transistor STO33N60M6 MOSFET N-channel 600 V, 105 mOhm typ., 26 A Feature • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected • High creepage package • Excellent switching performance thanks to the extra driving source pin Applications • Switching applications • LLC converters • Boost PFC converters Categories Mosfet Power...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:WSP4012

QM4803D​ N-Ch and P-Channel MOSFET Description The QM4803D is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gatecharge for most of the synchronous buck converter applications . The ...

Brand Name:Anterwell

Model Number:P4NK60ZFP

Place of Origin:original factory

Stock Offer (Hot Sell) Part No. Quantity Brand D/C Package MAX191BCWG+ 2338 MAXIM 16+ SOIC-24 MAX1932ETC+T 3044 MAXIM 13+ QFN MAX232EIDR 50000 TI 13+ SOP-16 MAX232IDW 9003 TI 11+ SOP-16 MAX253CSA+ 6562 MAXIM 14+ SOP-8 MAX3051EKA+T 3853 MAXIM 14+ SOT-23 ...

Place of Origin:China

Brand Name:ONSEMI

Model Number:SSN1N45B

High Power MOSFET SSN1N45B Power MOSFET, N-Channel, B-FET, 450 V, 0.5 A, 4.25 Ω, TO-92 [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for ...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

Low On Resistance High Power MOSFET Stable Process Reliable Quality *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-...

Brand Name:Original brand

Model Number:IRFR024NTRPBF

Place of Origin:Original Factory

...HIGH POWER TRANSISTOR IRFR024NTRPBF D- PAK N- CHANNEL 55V 17A 45W Detailed Product Description FET Type: N-Channel Operating Temperature: -55°C ~ 175°C Moisture Sensitivity Level (MSL): 1 (Unlimited) Lead Free Status / RoHS Status: Lead Free / RoHS Compliant High Light: high power mosfet transistors , n channel mosfet...

Brand Name:ON

Model Number:NTTFS3A08PZTAG

Place of Origin:America

...FETs MOSFETs Single P-CH 20V 9A 8WDFN P-Channel Products Description: 1. -20V,-15A,6.7 Mω, P-channel power MOSFET 2. P-channel 20V 9A (Ta) 840mW (Ta) Surface Mount 8-wdfn (3.3x3.3) 3. Trans MOSFET P-CH 20V 22A 8-Pin WDFN EP T/R 4. components -20V,-15A,6.7m ,P channel power...

Brand Name:Fuji Electric

Model Number:FLM0910-25F

Place of Origin:JP

FLM0910-25F RF Power Transistor X-Band Internally Matched FET DESCRIPTION The FLM0910-25F is a power GaAs FET that is internally matchedfor standard communication bands to provide optimum power and gain in a 50Ωsystem List Of Other Electronic Components...

Brand Name:Infineon Technologies

Model Number:IPP65R110CFDA

Place of Origin:United States

IPP65R110CFDA N-Channel 650 V 31.2A (Tc) 277.8W (Tc) Through Hole PG-TO220-3 Features:IPP65R110CFDA Category Single FETs, MOSFETs Mfr Infineon Technologies Series Automotive, AEC-Q101, CoolMOS Product Status Active FET Type N-Channel Technology MOSFET (...

Brand Name:Original Factory

Model Number:MSC017SMA120S

Place of Origin:CN

Integrated Circuit Chip MSC017SMA120S Single FETs MOSFETs Transistors TO-268-3​ Product Description Of MSC017SMA120S MSC017SMA120S is a 1200 V, 17 mΩ Silicon Carbide N-Channel Power MOSFET in a TO-268 (D3PAK) package, Surface Mount. Specification Of ...

Place of Origin:Original

...FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 75V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On,Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 121nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 4700pF @ 25V Vgs (Max) ±20V FET Feature Current Sensing Power...

Brand Name:DELI

Model Number:AOTF14N50

Place of Origin:Original

Part Number: AOTF14N50 Description: MOSFET N-CH 500V 14A TO220F Category: Discrete Semiconductor Products>>FETs - Single Packaging:Tube FET Type:N-Channel Technology:MOSFET (Metal Oxide) Drain to Source Voltage (Vdss):500V Current - Continuous Drain (Id...

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MGF0906B

...  High output power P1dB=37.0dBm(TYP.) @f=2.3GHz  High power gain GLP=11.0dB(TYP.) @f=2.3GHz  High power added efficiency P.A.E =40%(TYP.) @f=2.3GHz,P1dB  Hermetically sealed metal-ceramic package with ceramic lid Specifications: part no

Brand Name:HT

Model Number:F16N65L TO-220F-3L

Place of Origin:China

... power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

Brand Name:ON Semiconductor

Model Number:NCS20074DTBR2G

... two N-channel MOSFETs or IGBTs in a half-bridge configuration. Its fast rise and fall time (15ns typical) and wide input voltage range (4.5V to 18V) make it ideal for high-frequency switching applications. Applications: DC-DC Converters, Motor Drives,

Brand Name:JUYI

Model Number:JY4N8M

Place of Origin:China

...Power surface mount MOSFET for BLDC motor driver GENERAL DESCRIPTION: The JY4N8M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on‐resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power...