fets mosfets with high power efficiency

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

... MOSFET is engineered to deliver exceptional power output while maintaining high efficiency levels, making it an ideal choice for demanding industrial and commercial applications. With its high voltage fet capabilities, this High Power MOSFET is capable of

Brand Name:onsemi

Model Number:NTMFS5C460NLT1G

Place of Origin:original

NTMFS5C460NLT1G MOSFET Power Electronics 8-PowerTDFN High Power Efficiency Low On Resistance Switch Mode Supplies FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40 V Current - Continuous Drain (Id) @ 25°C 78A (Tc) Drive ...

Place of Origin:China

Brand Name:ONSEMI

Model Number:SSN1N45B

High Power MOSFET SSN1N45B Power MOSFET, N-Channel, B-FET, 450 V, 0.5 A, 4.25 Ω, TO-92 [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for ...

Brand Name:MITSUBISHI

Model Number:RD06HVF1

Place of Origin:Original

... High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets. RoHS COMPLIANT RD06HVF1-101 is a RoHS compliant products. RoHS compliance is ...

Brand Name:Original brand

Model Number:IRFR024NTRPBF

Place of Origin:Original Factory

...HIGH POWER TRANSISTOR IRFR024NTRPBF D- PAK N- CHANNEL 55V 17A 45W Detailed Product Description FET Type: N-Channel Operating Temperature: -55°C ~ 175°C Moisture Sensitivity Level (MSL): 1 (Unlimited) Lead Free Status / RoHS Status: Lead Free / RoHS Compliant High Light: high power mosfet transistors , n channel mosfet...

Brand Name:Toshiba

Model Number:TK100E08N1,S1X

Place of Origin:JAPAN

... a maximum voltage rating of 650V and a maximum current rating of 30A in a TO-247 package. It is ideal for applications requiring low on-resistance, high efficiency and high-speed switching. It is designed for industrial, automotive,

Brand Name:Fuji Electric

Model Number:FLM0910-25F

Place of Origin:JP

FLM0910-25F RF Power Transistor X-Band Internally Matched FET DESCRIPTION The FLM0910-25F is a power GaAs FET that is internally matchedfor standard communication bands to provide optimum power and gain in a 50Ωsystem List Of Other Electronic Components...

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MGF0906B

...  High output power P1dB=37.0dBm(TYP.) @f=2.3GHz  High power gain GLP=11.0dB(TYP.) @f=2.3GHz  High power added efficiency P.A.E =40%(TYP.) @f=2.3GHz,P1dB  Hermetically sealed metal-ceramic package with ceramic lid Specifications: part no

Brand Name:Infineon

Model Number:IRFI4019HG-117P

Place of Origin:China

...Power MOSFET 100V Ultra-Low Rds(on) 1.9mandOmega; TO-264 High Efficiency Robust Performance Superior Thermal Management and High Power Density for Demanding Applications andnbsp; Features Integrated Half-Bridge Package Reduces the Part Count by Half Facilitates Better PCB Layout Key Parameters Optimized for Class-D Audio Amplifier Applications Low RDS(ON) for Improved Efficiency...

Brand Name:DELI

Model Number:AOTF14N50

Place of Origin:Original

Part Number: AOTF14N50 Description: MOSFET N-CH 500V 14A TO220F Category: Discrete Semiconductor Products>>FETs - Single Packaging:Tube FET Type:N-Channel Technology:MOSFET (Metal Oxide) Drain to Source Voltage (Vdss):500V Current - Continuous Drain (Id...

Brand Name:JUYI

Model Number:JY4N8M

Place of Origin:China

...Power surface mount MOSFET for BLDC motor driver GENERAL DESCRIPTION: The JY4N8M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on‐resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power...

Brand Name:Original Factory

Model Number:MSCSM120HM31CT3AG

Place of Origin:CN

... systems, high-efficiency AC/DC and DC/AC converters, motor control, and AC switches. Specification Of MSCSM120HM31CT3AG Part Number: MSCSM120HM31CT3AG Total Gate Charge: 1602nC Configuration: 4 N-Channel Gate Charge: 464nC Power - Max: 745W RGON: 3.2 Ω

Brand Name:JUYI

Model Number:JY4P7M

Place of Origin:China

... device. It achieves a high cell density and effectively minimizes on‐resistance through the utilization of cutting-edge trench processing techniques. Additionally, the device features low ...

Brand Name:ZETEX

Model Number:ZXMN10A09KTC

Place of Origin:Original

...MOSFET IN DPAK SUMMARY V(BR)DSS=100V : RDS(on)=0.085 ; ID=7.7A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power...

Brand Name:GY

Model Number:GYS-40AB

Place of Origin:China

...High Power Induction Heater Heating Machine Our Induction Heating Machine adopts the most advanced technology MOS-FET,IGBT frequency conversion control to ensure high efficiency and maximum out-put power. Call us for money-saving,apply for heating,...

Brand Name:juyi

Model Number:JY8N5M

Place of Origin:China

General Description: The product utilizes the advanced planar processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and ...

Brand Name:Infineon Technologies

Model Number:SPW47N60C3

Place of Origin:China

Replacement for 600V CoolMOS™ C3 is CoolMOS™ P7 600V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the "working horse" of the portfolio. Summary of Features: Low specific on-state resistance (RDS(on)*A) Very low energy...

Brand Name:INFINEON

Model Number:IRF7342TRPBF

...MOSFET 1. Product Overview Infineon IRF7103342TRPBF is a high-performance N-channel enhancement-mode metal-oxide-semiconductor field-effect transistor (MOSFET) developed by Infineon Technologies AG—a global leader in semiconductor solutions for power management and industrial applications. As a key component in high-efficiency

Brand Name:OTOMO

Model Number:1503C1

Place of Origin:ShenZhen China

..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the

Model Number:NTTFS3A08PZTAG

Place of Origin:America

Brand Name:ON

...FETs MOSFETs Single P-CH 20V 9A 8WDFN P-Channel Products Description: 1. -20V,-15A,6.7 Mω, P-channel power MOSFET 2. P-channel 20V 9A (Ta) 840mW (Ta) Surface Mount 8-wdfn (3.3x3.3) 3. Trans MOSFET P-CH 20V 22A 8-Pin WDFN EP T/R 4. components -20V,-15A,6.7m ,P channel power MOSFETMOS NTTFS3A08PZTAG Improve Your Efficiency...