fets mosfets with warranty

Brand Name:AOS

Model Number:AO3407A

Place of Origin:original

AO3407A MOSFET Power Electronics Transistors FETs MOSFETs P-Channel 30 V 4.3A 1.4W Surface Mount Package SOT-23-3 FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 4.3A (Ta) Drive...

Brand Name:Infineon Technologies/International Rectifier IOR

Model Number:IRF1404ZPBF

... Hole TO-220AB Specification: Category Discrete Semiconductor Products 　 Transistors - FETs, MOSFETs - Single Mfr Infineon Technologies Series HEXFET® Package Tube FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss)

Brand Name:STMicroelectronics

Model Number:STW9N150

STW9N150 MOSFET N-CH 1500V 8A TO247-3 Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs Mfr STMicroelectronics Series PowerMESH™ Package Tube Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) ...

Brand Name:Infineon Technologies/International Rectifier IOR

Model Number:IRF1404ZPBF

Place of Origin:CHINA

...Transistors - FETs, MOSFETs - Single Mfr Infineon Technologies Series HEXFET® Package Tube FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40 V Current - Continuous Drain (Id) @ 25°C 180A (Tc) Drive ...

Brand Name:Original Factory

Model Number:SCTWA70N120G2V

Place of Origin:CN

SIC Integrated Circuit Chip SCTWA70N120G2V Single FETs MOSFETs TO-247-4 Transistors​ Product Description Of SCTWA70N120G2V SCTWA70N120G2V is N-Channel Single FETs MOSFETs Transistors, Extremely low gate charge and input capacitance, package is TO-247-4. ...

Brand Name:INFINEON

Model Number:IPD90N06S4-04

Place of Origin:China

IPD90N06S4-04 TO-252 60V 90A FET MOSFET Silk screen 4N0604 Brand New and original Integrated Circuit chip PRODUCT DESCRIPTION Part number IPD90N06S4-04 is manufactured by INFINEON and distributed by Stjk. As one of the leading distributors of electronic ...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

Low On Resistance High Power MOSFET Stable Process Reliable Quality *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: antialiased;}img, picture, video, canvas, svg {...

Place of Origin:Original

...FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 1.4A (Tc) Drive Voltage (Max Rds On,Min Rds On) - Vgs(th) (Max) @ Id 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 170pF @ 25V Vgs (Max) - FET...

Brand Name:Infineon Technologies

Model Number:BSC320N20NS3G

Place of Origin:Original

...-freeaccordiCM GROUPoIEC61249-2-21 •Idealforhigh-frequencyswitchingandsynchronousrectification Product Attributes Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200 V Current - Continuous Drain

Brand Name:INFEINEON

Model Number:IPB017N10N5LFATMA1

Place of Origin:Original Brand

...price . Thank you ! category Discrete semiconductor products transistor FET, MOSFET single FET, MOSFET manufacturer Infineon Technologies series OptiMOS™-5 FET type N-channel technology MOSFET (metal oxide) Leakage source voltage (Vdss) 100 V Current at 25 ° ...

Brand Name:MITSUBISHI

Model Number:RD06HVF1

Place of Origin:Original

RD06HVF1 MOS FET type transistor low power mosfet high voltage power mosfet DESCRIPTION RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. FEATURES High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz ...

Brand Name:VISHAY

Model Number:SUD50P06-15L-E3

Place of Origin:Malaysia

... Directive 2002/95/EC Manufacturer Vishay Siliconix Series TrenchFET® Packaging Tape & Reel (TR) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C

Brand Name:VISHAY

Model Number:SUD50P06-15L-E3

Place of Origin:Original Manufacturer

...FET SERIES Goods Condition: Brand New Part Status: Active Lead Free / Rohs: Complaint Function: Mosfet Mounting Type: Surface Mount Package: TO-252 High Light: n channel mosfet transistor , n channel transistor SUD50P06-15L-E3 Integrated Circuit IC Chip MOSFET P-CH 60V 50A TO252 TrenchFET Series P-Channel 60 V (D-S), 175 °C MOSFET FEATURES 1, TrenchFET® Power MOSFET...

Brand Name:ON

Model Number:NTTFS3A08PZTAG

Place of Origin:America

NTTFS3A08PZTAG Transistors FETs MOSFETs Single P-CH 20V 9A 8WDFN P-Channel Products Description: 1. -20V,-15A,6.7 Mω, P-channel power MOSFET 2. P-channel 20V 9A (Ta) 840mW (Ta) Surface Mount 8-wdfn (3.3x3.3) 3. Trans MOSFET P-CH 20V 22A 8-Pin WDFN EP T/R ...

Brand Name:onsemi

Model Number:FCD1300N80Z

Place of Origin:United States

FCD1300N80Z N-Channel 800 V 4A (Tc) 52W (Tc) Surface Mount TO-252AA Datasheet:FCD1300N80Z Category Single FETs, MOSFETs Mfr onsemi Series SuperFET II Product Status Not For New Designs FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source ...

Place of Origin:China

Brand Name:ONSEMI

Model Number:SSN1N45B

High Power MOSFET SSN1N45B Power MOSFET, N-Channel, B-FET, 450 V, 0.5 A, 4.25 Ω, TO-92 [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for ...

Brand Name:Infineon

Model Number:IRFHM9331TRPBF

Place of Origin:China

IRFHM9331TRPBF andnbsp; Featuresandnbsp; andnbsp; andnbsp; andnbsp; andnbsp; andnbsp; andnbsp; andnbsp; andnbsp; andnbsp; andnbsp; andnbsp; andnbsp; andnbsp; andnbsp; andnbsp; andnbsp; andnbsp; andnbsp;/andnbsp; andnbsp; andnbsp; andnbsp; andnbsp; andnbsp...

Brand Name:Original

Model Number:STW48NM60N

Place of Origin:Original

... STMicroelectronics Series MDmesh™ II Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 44A (Tc) Drive ...

Place of Origin:US

Brand Name:Original

Model Number:IRF9540NPBF

...FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 23A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 117mOhm @ 11A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 97nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V FET...

Brand Name:Hua Xuan Yang

Model Number:1503C1

Place of Origin:ShenZhen China

..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the