gallium arsenide hemt transistor

Brand Name:zmkj

Model Number:6inch S-C-N

Place of Origin:CHINA

.../3inch /4inch /6inch S-C-N Type Si-doped Gallium arsenide GaAs Wafer Product Description (GaAs) Gallium Arsenide Wafers PWAM Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth ...

Brand Name:zmsh

Model Number:GaAs-3inch

Place of Origin:china

... GaAs) Gallium Arsenide Wafers Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor with a Zinc blende crystal structure. Gallium arsenide is used in the

Brand Name:PAM-XIAMEN

Place of Origin:China

...Gallium Arsenide) Substrate With Low EPD , 3”, Prime Grade PAM-XIAMEN Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer. We has used advanced crystal growth technology, vertical gradient freeze(VGF) and (GaAs)Gallium Arsenide...

Brand Name:ZG

Model Number:MS

Place of Origin:CHINA

Single crystal and polycrystalline GaAs wafer ( Gallium Arsenide ) for making LD , LED , microwave circuit, solar cell We provides both single crystal and polycrystalline GaAs wafer ( Gallium Arsenide ) to opto-electronics and micro-electronics industry...

Place of Origin:CN

Brand Name:Original Factory

Model Number:HMC1049LP5E

Wireless Communication Module HMC1049LP5E Gallium Arsenide RF Amplifiers QFN32 [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery ...

Place of Origin:CHINA

Brand Name:UND

Gen3 GaAsGreen/White Gallium Arsenide Photocathode Night Vision tube Image Intensifier Tube Item Gen2+ Gen3 Unit FOM 1200-2000 1900-...

Brand Name:HT

Model Number:HT-BGW

Place of Origin:China

HT-BGW Glass Grinding Wheel For Gallium Arsenide GaN Wafer High Efficiency Hongtuo, as a major designer, manufacturer and distributor of diamond and CBN grinding wheels, can offer an excellent selection of back grinding wheels. This particular grinding ...

Model Number:CGH40045F

Place of Origin:Malaysia

Brand Name:KAIGENG

CGH40045F N/A Electronic Components IC MCU Microcontroller Integrated Circuits CGH40045F #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-...

Brand Name:original

Model Number:FODM217DR2

Place of Origin:original

... circuits transistor output optocouplers 4 PIN TRANSISTOR OUTPUT MFP SR2835ESKG The FODM217 series consist of a gallium arsenide infrared emitting diode driving a phototransistor. The FODM214 series consist of two gallium arsenide infrared emitting...

Brand Name:INNOTION

Model Number:YP601238T

Place of Origin:Jiangsu, China

...Gallium Nitride RF Power Transistor YP601238T with High Efficiency Gain and Wide Bandwidth DC to 7.2GHz Product Description Innotion’s YP601238T is a 7-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 7200MHz. The transistor...

Brand Name:Analog Devices Inc.Analog Devices Inc.

Model Number:AD8364ACPZ-REEL7

Place of Origin:Multi-origin

Product Listing: AD8364ACPZ-REEL7 RF Power Transistors Description: The AD8364ACPZ-REEL7 is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) RF power transistor designed for use in cellular and other wireless applications. Features...

Brand Name:Anterwell

Model Number:TLP734

Place of Origin:original factory

... optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP. TLP734 is no−base internal connection for high−EMI environments. Collector−...

Brand Name:Toshiba Semiconductor and Storage

Model Number:TLP181GR

Place of Origin:CHINA

... Transistor Output 3750Vrms 1 Channel 6-MFSOP Description: The TOSHIBA mini flat coupler TLP181 is a small outline coupler, suitable for surface mount assembly. TLP181 consist of a photo transistor optically coupled to a gallium arsenide infrared...

Model Number:TLP734

Place of Origin:original factory

... optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP. TLP734 is no−base internal connection for high−EMI environments. Collector−...

Place of Origin:JAPAN

Brand Name:FUJITSU

Model Number:FLC081

FLC081 is a GaAs FET & HEMT Chip. Part NO: FLC081 Brand: FUJITSU Date Code: 05+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are widely used in ...

Categories:RF Transistors

Country/Region:china

QPD1016 RF JFET Transistors DC-1.7 GHz 500W 50V GaN RF Tr Manufacturer: Qorvo Product Category: RF JFET Transistors RoHS: Details Transistor Type: HEMT Technology: GaN SiC Operating Frequency: DC to 1.7 GHz Gain: 23.9 dB Transistor Polarity: N-Channel Vds...

Place of Origin:Original

NPT2010 Specifications Part Status Active Transistor Type HEMT Frequency 0Hz ~ 2.2GHz Gain 15dB Voltage - Test 48V Current Rating - Noise Figure - Current - Test 600mA ...

Brand Name:ON Semiconductor

Model Number:4N35M

Place of Origin:Original & New

4N35 Transistor Output Optocoupler 4N35M DIP-6 Optoisolator Photovoltaic Output Description The general purpose optocouplers consist of a gallum| arsenide infrared emiting diode driving a silicon phototransistor in a standard plastic six-pin dual-in-ine ...

Brand Name:VBE

Model Number:VBE6006H

Place of Origin:CHINA

Brand Name:HUANSHUN

Model Number:YGS10040R

Place of Origin:CHINA

... integrated module or high sensitivity photocell, low noise front gallium arsenide amplification chip, and the last stage adopts UK OEI gallium arsenide power double amplification module, the maximum output level can reach 2×102dBuV(YGS10040R); The