gan power amplifier with warranty

Brand Name:OEM

Place of Origin:China

... 100W Gan Power Amplifier Module For Anti Drone System Anti Autel Product Parameters Appearance and installation instructions: 1. Overall dimensions: 170*94*26.5mm 2. Interface form: Power supply conditions: +30V power supply: 7W2 (male) RF input interface...

Brand Name:PAM-XIAMEN

Place of Origin:China

10*10mm2 Mg-Doped GaN Epitaxial Wafers On Sapphire Substrates For GaN Power Amplifier PAM-XIAMEN’s Template Products consist of crystalline layers of gallium nitride (GaN), aluminum nitride (AlN),aluminum gallium nitride (AlGaN)and indium gallium nitride...

Brand Name:LDSK

Place of Origin:Guangdong, China

...Power Amplifier GaN Anti-FPV Module for Counter Drone Systems Key Specifications Attribute Value Customization Range 10-6700MHz, 10-200W Frequency & Power 150-200MHz 50W Gain 47dBm Voltage 24-32V Working Efficiency >60% Size 38×112×19.5mm Product Features High-efficiency GaN technology for superior RF performance Wide customization options for frequency (10-6700MHz) and power...

Brand Name:SWT

Model Number:SW-PA-600012000-47C

Place of Origin:China

X Band Power Amplifier 6-12 GHz Psat CW 47 W RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and ...

Place of Origin:CN

Brand Name:Original Factory

Model Number:QPA3069TR7

Wireless Communication Module QPA3069TR7 High-Power S-band GaN Power Amplifier [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% ...

Brand Name:SZHUASHI

Model Number:YP40601650T

Place of Origin:Jiangsu，China

SZHUASHI High Efficiency C-Band GaN 50W Power Amplifier Chip YP40601650T for 4400-6000MHz Product Description YP40601650T is a 50-watt, internally matched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high ...

Brand Name:Qorvo

Model Number:QPA2933

... of saturated output power and 28dB of large-signal gain while achieving 62% power-added efficiency. The QPA2933 is fabricated on a 0.25µm QGaN25 GaN (Gallium Nitride) on SiC (Silicon Carbide) process and can support a variety of operating conditions to

Brand Name:ZR Hi-Tech

Model Number:LT-PA-004030-G52P51

Place of Origin:CHINA

...Power Amplifier Quick Detail: · Aluminum Housing · Customizable Frequency · -40℃~+50℃ operating temperature · Small Signal Gain 52dB · Output Power 51dBm · CE, RoHS, REACH compliant · 1 Year Warranty Description: The LT-PA-004030-G52P51 from ZR is a RF Amplifier with Frequency 0.4 to 3 GHz, Small Signal Gain 52 dB, Gain Flatness ±3.5 dB, Output Power 51dBm, Input Power 7W2. Tags: Power Amplifier...

Brand Name:OEM/ODM

Model Number:JYT-M500-100

Place of Origin:China

Product Parameters Main Components : 1, Adjustable Bandwidth 2, Adjustable Bandwidth 3, Adjustable Driver Tube Voltage 4, Tube Voltage 5, Adjustable GAN Voltage 6, GAN Voltage 1.RF Data Item Spec. Remarks Frequency Range(MHz) 500-600 Bandwidth Range±10MHz ...

Place of Origin:JAPAN

Brand Name:FUJITSU

Model Number:FMM5027VJ

...Power Amplifier. Part NO: FMM5027VJ Brand: FUJITSU Date Code: 06+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are widely used in micro-cellular amplifier, CATV radio and television transmitters, GSM / CDMA / PHS repeaters, trunk amplifiers, tower mounted amplifiers...

Place of Origin:Guangdong, China (Mainland)

Brand Name:BTB

Model Number:BTB-150-12

...power amplifier Quick Details Place of Origin: Guangdong, China (Mainland) Brand Name: BTB Model Number: BTB-150-12 Output Type: DC Connection: Desktop color: white and black or other warranty: 3 years used: cctv camera /set top box/router Packing: paper box or OEM colore box protection: OVP .OPP SCP Working temprature: -10 ~60° material: aluminum output: dual .singel,triple,quad,din rail efficient: 86% Certificate: CE SAA FCC harga power

Model Number:TDA2030A

Place of Origin:china

... temperature range: -40 ° C to + 150 ° C 5)Package Type: Pentawatt V 6)Number of pins: 5 7)SVHC (No substance): No SVHC (20-Jun-2011) 8)Power output: 18W 9)Change slope: 8 10)Device label: 2030 11)Package Type:

Brand Name:GE

Model Number:IS200HFPAG1A

Place of Origin:USA

...Power Amplifier Module Power Supply Board Product Details: Brand Name GE Model IS200HFPAG1A Condition New Gross Weight/Shipping Weight 2.2 lbs / 35.2 oz / 1kg Packing Size 6.4" x 6.4" x 4.8" (16cm x 16 cm x 12 cm) Country of Origin/Original Country United States (USA) Lead Time In Stock Shipping Port Xiamen Payment T/T Sales Price Inquiry Color Depend on product Warranty...

Model Number:ynx-Anti Drone Module

Place of Origin:Guangdong, China

Brand Name:yetnorson

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Place of Origin:Guangdong, China

Brand Name:original

Model Number:ME-2500.1D

Product Description Specification item value Number Of Channels 1 Channel Separation 1 Type Class d SNR 91 - 100db Frequency Response Rate 20hz-400hz Voltage 12v Combination Crossovers Warranty 1 year Place of Origin China Guangdong Brand Name original ...

Brand Name:ATNJ

Model Number:AT-20-700-20W

Place of Origin:China

...power amplifier (UWPA) is a power amplifier with ultra wide bandwidth designed to amplify signals across a wide range of frequencies while maintaining high efficiency, linearity, and low distortion. It was specifically designed for RF jamming, but has also

Brand Name:VBE

Model Number:VBE-200PA

Place of Origin:China

... GaN design Rack mounted system Instantaneous wide bandwidth Suitable for broadband EMI/RFI, Lab, Comm., and EW applications Suitable for ...

Brand Name:TeXin

Model Number:TX-20W

Place of Origin:Shenzhen China

... interference signal of Fpv drone efficiently .When it broke the drone FPV image transmit channel that The drone will be forced to return . The low power 20W WIFI 5G drone signal module using GaN material amplifier tube which has more powerful more

Brand Name:HMT

Model Number:4 inch

Place of Origin:China

... on a Silicon (111) substrate for power & RF applications.Each layer can be customized. The benifits of using GaN epi wafers: 5G-related RF devices, such as power amplifier High-efficiency power electronics devices, such as power supplies, DC/DC converter,