gate charge super junction mosfet

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

...Super Junction MOSFET is a power discrete device for LED Driver, PFC Circuit, Switching Power Supply, UPS Of Continuous Power Supply System, and New Energy Power Equipment. It is made by Multi-layer Epitaxy Process, which has excellent Anti EMI and Anti Surge Capabilities compared to Trench Process. It features an ultra-low Junction Capacitance and an ultra small package. Therefore, it is the ideal choice for SJ MOSFET, Super

Brand Name:Infineon Technologies

Model Number:BSC070N10NS5

Place of Origin:original

... N-channel MOSFET with low drain-source on-resistance. It features low gate charge, low output capacitance, fast switching times, and low gate-to-drain charge. This MOSFET is ideal for use in high-side switching, power supplies, DC-DC converters, and

Brand Name:Original brand

Model Number:IGOT60R070D1AUMA1

Place of Origin:Original

...reverse conduction • Low gate charge, low output charge • Superior commutation ruggedness • Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22) Benefits • Improves system efficiency • Improves ...

Brand Name:Infineon / IR

Model Number:IRLML5203TRPBF

Place of Origin:CHIAN

...Infineon / IR MOSFET MOSFT P-Ch -30V -3A 98mOhm 9.5nC Log Lvl 1.Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free RoHS Compliant, Halogen-Free 2.Description These P-channel MOSFETs from International ...

Brand Name:Infineon

Model Number:SPA04N80C3XKSA1

Place of Origin:China

...MOSFET 800V Ultra-High Voltage 4A Current Low Rds(on) Super Junction Technology Low Gate Charge High Efficiency Halogen-Free Robust Performance for SMPS andamp; Industrial Drives andnbsp; Features New revolutionary high voltage technology Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Ultra low gate charge...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:WSF6012

...MOSFET Description The WSF6012 is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSF6012 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge

Brand Name:Hua Xuan Yang

Model Number:4306W-A

Place of Origin:ShenZhen China

...Gate Charge Mosfet Power Transistor For Inverter Systems Management What is a Mosfet Power Transistor ? A power MOSFET is a special type of metal oxide semiconductor field effect transistor. It is specially designed to handle high-level powers. The power MOSFET’s are constructed in a V configuration. Therefore, it is also called as V-MOSFET, VFET. The symbols of N- channel & P- channel power MOSFET are shown in the below figure. Mosfet...

Brand Name:Ti

Model Number:FDPF045N10A

... Trench Technology for Extremely Low RDS(on) High Power and Current Handling Capability RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has been tailored to minimize the on

Brand Name:Alpha & Omega Semiconductor Inc.

Model Number:AOD417

Place of Origin:CHINA

...(ON), low gate charge and low gate resistance. With the excellent thermal resistanceof the DPAK package, this device is well suited forhigh current load applications. FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V ...

Categories:Discrete Semiconductors

Country/Region:china

...mosfet For health care,wireless charger Applications: health care, wireless charger PSF70060B is PowerCubeSemi’s second generation of high voltage Super Junction MOSFET with FRD that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge

Brand Name:Original Factory

Model Number:NVHL050N65S3HF

Place of Origin:CN

...MOSFETs Transistors TO-247-3​ Product Description Of NVHL050N65S3HF NVHL050N65S3HF is new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. Specification Of NVHL050N65S3HF Part Number NVHL050N65S3HF Series Automotive, AEC-Q101, SuperFET® III FET Type N-Channel Technology MOSFET...

Brand Name:Maplesemi

Model Number:SLH60R080SS

Place of Origin:Original

...MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for AC/DC power conversion Features 47A, 600V, RDS(on) typ.= 68mΩ@VGS =10 V Low gate charge...

Brand Name:Anterwell

Model Number:TK10P60W

Place of Origin:original factory

MOSFETs Silicon N-Channel MOS (DTMOS) TK10P60W Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) ...

Brand Name:Infineon Technologies

Model Number:SPW47N60C

Place of Origin:USA

...MOSFETs RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case: TO-247-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 600 V Id - Continuous Drain Current: 47 A Rds On - Drain-Source Resistance: 70 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 2.1 V Qg - Gate Charge...

Brand Name:JUYI

Model Number:JY13M

Place of Origin:China

JY13M N and P Channel 40V MOSFET for BLDC motor driver GENERAL DESCRIPTION The JY13M is the N and P Channel logic enhancement mode power field transistors Which can provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-...

Brand Name:HT

Model Number:F7N65L TO-220F-3L

Place of Origin:China

...MOSFET 7A 650V Applications In Switching Power Supplies And Adaptors 7A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET...

Brand Name:onsemi

Model Number:NTE4153NT1G

...MOSFETs RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: SC-89-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 915 mA Rds On - Drain-Source Resistance: 230 mOhms Vgs - Gate-Source Voltage: - 6 V, + 6 V Vgs th - Gate-Source Threshold Voltage: 450 mV Qg - Gate Charge...

Brand Name:CJ

Model Number:CJ2310 S10

Place of Origin:CHINA

CJ2310 S10 NPN PNP Transistors N-Channel MOSFET Plastic-Encapsulate MOSFETS DESCRIPTION The CJ2310 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for ...

Brand Name:JUYI

Model Number:JY13M

Place of Origin:China

JY13M N and P Channel 40V MOSFET for BLDC motor driver GENERAL DESCRIPTION The JY13M is the N and P Channel logic enhancement mode power field transistors Which can provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-...

Brand Name:Infineon Technologies

Model Number:BSC109N10NS3G

Place of Origin:Original

... level ·Excellent gate charge x RDs(on)product (FOM) · Very low on-resistance RDs(on) ·150 C operating temperature · Pb-free lead plating; RoHS compliant ·...