high efficiency mosfet device

Brand Name:Infineon Technologies

Model Number:IRFP140NPBF

Place of Origin:original

IRFP140NPBF MOSFET Power Electronics High Efficiency Switching Device for Maximum Power Transfer Features: • N-Channel • VDSS = 100V • ID = 18A • RDS(on) = 0.02Ω • Package = TO-220AB • RoHS Compliant • High-speed switching • Low gate ...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

...h as Solar Inverter, High-voltage DC/DC Converter, Motor Driver, UPS Power Supply, Switching Power Supply and Charging Pile. This MOSFET is capable of handling high current and delivering maximum performance with its low on-resistance. It is also known as

Model Number:BLF174XR

Place of Origin:USA

... band Feature 1, Easy power control 2, Integrated ESD protection 3, Excellent ruggedness 4, High efficiency 5, Excellent thermal stability 6, Designed for broadband operation (HF to 128 MHz)  Compliant to Directive 2002/95/EC, regarding ...

Brand Name:GENA

Model Number:DTRO Device

Place of Origin:WUXI JIANGSU CHINA

..., high pressure and ultra-high pressure.​ Definition and Principle: DTRO (Disk Tube Reverse Osmosis) is a disc-tube reverse osmosis device, which is a highly efficient membrane separation water treatment device. Its working principle is based on reverse

Brand Name:Suntech Tower

Model Number:SLW

Place of Origin:China

​​Conductor Mesh Sock Joints High Efficiency Coupling Device For Grid Projects​ Core Design Features​​ ​​High-tensile stainless steel mesh​​ (304/316 grade) for maximum flexibility and strength ​​Forged alloy steel end fittings​​...

Brand Name:SUKO

Place of Origin:China

...: 1, Adopt adjustable speed to accommodate pitch ,no need to change gear while operation; 2, High productive efficiency ; production rate is three times higher than present usual machine per hour ,the max production reach to 98m/hour; 3, Low noise ,...

Brand Name:Pinsheng energy

Model Number:PE-10550

Place of Origin:China

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Brand Name:YAYE

Place of Origin:China Guangdong

Product Description: 1.Foldable structure: Adopting a folding design, it significantly increases the effective filtration area of the filter material (compared to flat-type filters, the filtration area can typically be increased by 3-5 times). Under the ...

Brand Name:Lingxun

Place of Origin:China

... SWITCH • Motor driven • Ammeter • UPS power Q1.Who are we? A:We are based in Guangdong, China,factory start from 2012,is a national high-tech enterprise that focuses on packaging and testing of power semiconductor devices.currently has more than

Brand Name:Original brand

Model Number:DMHT3006LFJ-13

Place of Origin:Original

...making it ideal for high efficiency power management applications. Feature Low On-Resistance  Low Input Capacitance  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data 

Brand Name:Infineon

Model Number:IRF640NPBF

Place of Origin:Original Factory

...MOSFET Power Transistor Description Fifth Generation HEXFET® Power MOSFET s from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device

Place of Origin:China

Brand Name:ONSEMI

Model Number:FDMQ8205

High Power MOSFET FDMQ8205 GreenBridgeTM 2 Series of High-Efficiency Bridge Rectifiers [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over ...

Brand Name:Original Factory

Model Number:MSC040SMA120B4

Place of Origin:CN

High Efficiency N-Channel Power MOSFET Transistors MSC040SMA120B4 TO-247-4 Product Description Of MSC040SMA120B4 MSC040SMA120B4 device is a 1200 V, 40 mΩ SiC MOSFET in a TO-247 4-lead package with a source sense.High efficiency to enable lighter, more ...

Brand Name:Hua Xuan Yang

Model Number:1503C1

Place of Origin:ShenZhen China

..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the

Brand Name:OTOMO

Model Number:1503C1

Place of Origin:ShenZhen China

..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the

Brand Name:JUYI

Model Number:JY16M

Place of Origin:China

...density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. FEATURES ●

Brand Name:original

Model Number:CLA50E1200HB

Place of Origin:Original Factory

...HIGH POWER MOSFET TRANSISTORS / THYRISTOR FOR LINE FREQUENCY 1200V 50A Goods Condition: Brand New Part Status: Active Lead Free / Rohs: Complaint Function: Circuit Control Mounting Type: Through Hole Package: TO247 High Light: n channel mosfet transistor , n channel transistor CLA50E1200HB High Efficiency...

Brand Name:Wanan

Model Number:YE3/YE4/YE5

Place of Origin:China

...High Efficiency Electric Motors For Medical Instruments 1. Description Three Phase High Efficiency Electric Motors for Medical Instruments are a type of electric motor designed specifically for use in medical instrument applications. These motors are constructed with a three-phase design to ensure their efficient performance and reliable operation in medical devices. The High Efficiency...

Brand Name:Infineon

Model Number:IRF640NPBF

Place of Origin:Original Factory

...MOSFET Power Transistor Description Fifth Generation HEXFET® Power MOSFET s from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device

Brand Name:ZMSH

Model Number:6Inch SiC Epitaxial Wafer

Place of Origin:CHINA

...High Voltage SiC Epitaxial Wafer Main Introduction 6Inch Ultra-High Voltage SiC Epitaxial Wafer 100–500 μm For MOSFET Devices This product is a high-purity, low-defect silicon carbide (SiC) epitaxial layer with a thickness ranging from 100 to 500 μm, grown on a 6-inch N-type 4H-SiC conductive substrate via high...