high efficiency rf power transistors

Model Number:BLF174XR

Place of Origin:USA

... band Feature 1, Easy power control 2, Integrated ESD protection 3, Excellent ruggedness 4, High efficiency 5, Excellent thermal stability 6, Designed for broadband operation (HF to 128 MHz)  Compliant to Directive 2002/95/EC, regarding ...

Categories:RF Power Amplifier Module

Country/Region:china

...High Power Amplifier Module High-Efficiency RF Power Amplifier for X-Band Applications The 8-10 GHz 50W Power Amplifier Module is a high-performance X-band RF amplifier designed for demanding wireless communication, radar, electronic warfare, instrumentation, and defense applications. Featuring advanced GaN technology, the module delivers outstanding output power, excellent linearity, high efficiency...

Brand Name:VBE

Model Number:VBE6006H

Place of Origin:CHINA

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Model Number:LDK-TZ-KPGAN-30W

Brand Name:Ladasky

Place of Origin:Guangdong, China

Product Description 30-6300MHz 30W GaN PA Module LDK‑TZ‑KPGAN‑30W Product Specifications TZ‑KPGAN‑30W is a compact metal‑enclosed RF power amplifier built for industrial system integration. It delivers typical 30W output power with peak power up to 50W acr...

Brand Name:Analog Devices Inc.

Model Number:HMC1122LP4METR

Place of Origin:Multi-origin

...-power applications. This device offers excellent linearity and efficiency, and is capable of delivering up to 17 dB gain and 50 W of output power. It is ideal for use in broadband power amplification applications such as cellular base stations, Wi-Fi, and

Place of Origin:MALAYSIA

Brand Name:MOTOROLA

Model Number:MRW53601

... specializes in High frequency microwave devices: These products are widely used in micro-cellular amplifier, CATV radio and television transmitters, GSM / CDMA / ...

Brand Name:SZHUASHI

Model Number:YP601820T

Place of Origin:Jiangsu，China

...High Efficiency 20W Gallium Nitride 28V DC-6GHz 20W RF Power Transistor Product Description Innotion’s YP601820T is a 20-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 6000MHz. The transistor is supplied in a ceramic /metal flange package. Pout 20W Frequency 6000MHz Features High Efficiency...

Brand Name:Original brand

Model Number:STWA65N60DM6

Place of Origin:Original

...Power Transistor STWA65N60DM6 Mosfet N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power TO-247 Feature • Extremely low RDS(on)*area and Qg and optimized capacitance profi le for light load conditions • Extremely high dv/dt • Optimized body diode recovery phase • Optimized softness APPLICATIONS • Charging stations for electric vehicles • LED lighting • Telecom • Servers • Solar inverters BENEFITS • Extremely high...

Model Number:U-300-1500HZ

Place of Origin:China

Brand Name:UND

...-1500MHz High Efficiency RF Wide-band Anti-drone Module Signal Amplifier with Signal Source Product name Wide-band Amplifier Module Frequency 1500-2500MHz Power 100W Standard Input Power 7 dbm Max Gain 42 db Power Amplifier Effciency 35 % RF Output ...

Brand Name:Semelab / TT Electronics

Model Number:D2085UK

Place of Origin:UK

...RF POWER TRANSISTOR MOSFET Manufacturer: TT Electronics Product Category: TT Electronics Brand: Semelab / TT Electronics The D2085UK is a push-pull RF power transistor MOSFET that operates at a voltage of 28V and can handle a power output of 120W. It is designed for use in the frequency range of 1MHz to 1000MHz. Silicon MOSFET: MRF140: RF MOSFET Line, 30W, up to 400MHz, 28V [1] MRF134: Broadband RF Power

Brand Name:Texas Instruments

Model Number:PD85035S-E

Place of Origin:Malaysia

PD85035S-E PD85035STR-E PD85035-E RF power transistor MOSFETS The PD85035-E is a common source N-channel,enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates...

Brand Name:NXP

Model Number:BFS505

Place of Origin:CHINA

...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF...

Model Number:FCX690BTA

... pulse current of up to 6A, along with a low saturation voltage for efficient operation. This device is AEC-Q101 qualified, ensuring high reliability.Product Attributes Brand: Diodes Incorporated Product Line: Diodes Incorporated Material: Molded plastic (

Brand Name:Sinoscite

Model Number:SNSD-204-004080

Place of Origin:Sichuan, China

...High Isolation RF Power Divider Low VSWR 2.92 Female Connector​ 1 Advantages about rf power divider: 1. Low Insertion Loss, High power handling. 2. High quality, Low price, Fast delivery. 3. Custom design available upon request. 4. Competitive price. 5. High powercapacity,. excellent isolation 2 .Description: A power divider divides an incoming signal into two (or more) output signals. In the ideal case, a power...

Brand Name:original

Model Number:SIHB22N60E-E3

Place of Origin:Original Manufacturer

HIGH VOLTAGE SINGLE MOSFET POWER TRANSISTOR SIHB22N60E - E3 600V 21A PACKAGE D2PAK FET Type: N-channel Operating Temperature: -55°C ~ 150°C (TJ) Package: TO263-3 D2PAK High Light: n channel mosfet transistor , n channel transistor High Voltage Single Mosfet Power Transistor...

Brand Name:in

Model Number:STAV58010P2

Place of Origin:CN

Gallium Nitride 50V, 16W, DC-6GHz RF Power Transistor Description The STAV58016P2 is a 16 watt, unmatched GaN HEMT, ideal for general applications up to 6GHz. It features high gain, wide band and low cost, in 4*4.5mm DFN plastic package. It can support CW...

Brand Name:ST

Model Number:TIP42C

Place of Origin:Original Factory

...Power Transistor MOSFET Transistors for Switch Circuit TIP41C TIP42C Description The TIP41C is a base island technology NPN power transistor in TO-220 plastic package that make this device suitable for audio, power linear and switching applications. The complementary PNP type is TIP42C Features Complementary PNP-NPN devices New enhanced series High...

Brand Name:Hua Xuan Yang

Model Number:HXY1404S

Place of Origin:ShenZhen China

... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. 40V/12A R DS(ON) = 13mΩ(typ.)

Brand Name:Hua Xuan Yang

Model Number:HXY1404S

Place of Origin:ShenZhen China

... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. 40V/12A R DS(ON) = 13mΩ(typ.)

Model Number:BFS505

Place of Origin:CHINA

...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF...