high performance fets mosfets

Brand Name:Infineon Technologies

Model Number:IRFHM830TRPBF

Place of Origin:Multi-origin

Product Description: 1. N-Channel MOSFET for high frequency switching applications 2. Low gate charge and fast switching speed 3. Low on-resistance and high current handling capability 4. High Avalanche Energy and ESD protection 5. RoHS Compliant and Pb-...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

...High Voltage MOS-Gate Transistor, commonly known as High Voltage FET, is a type of semiconductor device designed for use in high voltage applications. This device has been gaining popularity due to its strong performance and wide range of applications. It offers excellent characteristics in high...

Brand Name:MITSUBISHI

Model Number:RD06HVF1

Place of Origin:Original

... High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets. RoHS COMPLIANT RD06HVF1-101 is a RoHS compliant products. RoHS ...

Brand Name:Original Factory

Model Number:IMBG65R107M1H

Place of Origin:CN

...FETs MOSFETs Transistors IMBG65R107M1H Integrated Circuit Chip Product Description Of IMBG65R107M1H IMBG65R107M1H provides an integrated ultra-fast body diode allowing usage in resonant topologies with the lowest reverse recovery charge. Specification Of IMBG65R107M1H Part Number: IMBG65R107M1H Channels: 1 Vds: 650 V Rds On: 42 MOhms Id: 63 A Vgs Th: 5.7 V Benefits Of​ IMBG65R107M1H Unique combination of high performance, high

Brand Name:VISHAY

Model Number:SIHB22N60E-E3

Place of Origin:CHINA

... MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 21A (Tc) Drive ...

Brand Name:Infineon Technologies/International Rectifier IOR

Model Number:IRF1404ZPBF

... Hole TO-220AB Specification: Category Discrete Semiconductor Products 　 Transistors - FETs, MOSFETs - Single Mfr Infineon Technologies Series HEXFET® Package Tube FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss)

Brand Name:STMicroelectronics

Model Number:STW9N150

STW9N150 MOSFET N-CH 1500V 8A TO247-3 Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs Mfr STMicroelectronics Series PowerMESH™ Package Tube Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) ...

Brand Name:Infineon Technologies/International Rectifier IOR

Model Number:IRF1404ZPBF

Place of Origin:CHINA

...Transistors - FETs, MOSFETs - Single Mfr Infineon Technologies Series HEXFET® Package Tube FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40 V Current - Continuous Drain (Id) @ 25°C 180A (Tc) Drive ...

Brand Name:Hua Xuan Yang

Model Number:HXY1404S

Place of Origin:ShenZhen China

... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. 40V/12A R DS(ON) = 13mΩ(typ.)

Brand Name:Hua Xuan Yang

Model Number:HXY1404S

Place of Origin:ShenZhen China

... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. 40V/12A R DS(ON) = 13mΩ(typ.)

Brand Name:Lingxun

Place of Origin:China

Model Number:CS2N65A4

... MAX Typ Typ CS2N65A4 TO-251 N 2 650 ±30 3 4 4000 4500 11 295 Product Description: One of the standout features of this MOSFET is its low ON resistance, which ensures that power loss is kept to a minimum during operation. Additionally, the

Brand Name:INFINEON

Model Number:IPD90N06S4-04

Place of Origin:China

IPD90N06S4-04 TO-252 60V 90A FET MOSFET Silk screen 4N0604 Brand New and original Integrated Circuit chip PRODUCT DESCRIPTION Part number IPD90N06S4-04 is manufactured by INFINEON and distributed by Stjk. As one of the leading distributors of electronic ...

Place of Origin:Original

...FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 1.4A (Tc) Drive Voltage (Max Rds On,Min Rds On) - Vgs(th) (Max) @ Id 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 170pF @ 25V Vgs (Max) - FET...

Brand Name:Ziitek

Model Number:TIS800K

Place of Origin:China

High-Performance Semiconductor Electrical Insulating Sheet Thermal Conductive Silicone Gasket Sil Pad For IGBT Mosfet Products discription TIS®800K series is a thermal silicone product featuring a ceramic-filled layer coated on a polyimide film, offering excellent thermal conductivity and heat transfer performance...

Brand Name:NXP Semiconductors

Model Number:SI2304DS,215

Place of Origin:China

...MOSFET with Ultra-Low 45mandOmega; RDS(on) SOT-23 Package High Performance Enhanced Efficiency Power Management and Logic Level Gate Drive for Space-Constrained Designs andnbsp; Features TrenchMOSandtrade; technology Very fast switching Subminiature surface mount package. andnbsp; Applications Battery management High...

Brand Name:AD

Model Number:AD8065WARTZ

Place of Origin:brand new

...FET Op Amps optical integrated circuits AD8065WARTZ High Performance APPLICATIONS ►Automotive driver assistance systems ►Photodiode preamps ►Filters ►A/D drivers ►Level shifting ►Buffering FEATURES Wide supply voltage range: 5 V to 24 V Single-supply and rail-to-rail output Low offset voltage 1.5 mV maximum High...

Brand Name:WJ

Model Number:FP2189

Quick Detail: high performance 1-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount Specifications: part no. FP2189 Manufacturer WJ　 supply ability 2643 datecode 05+ package SOT89　 remark new and original stock Competitive Advantage: ...

Model Number:XQF-1

Brand Name:OEM

Place of Origin:China

... system Widely used in electric power, metallurgical, petrochemical system High energy ignition device - Closing speed fast , close time ≤1S.- Sealed self compensation structure, good sealing performance, long service life. Applications: Widely used in

Place of Origin:China

Brand Name:ONSEMI

Model Number:FDI030N06

High Power MOSFET FDI030N06 N-Channel PowerTrench^® MOSFET 60V, 193A, 3.2mΩ High Power MOSFET FDI030N06 N-Channel PowerTrench® MOSFET 60V, 193A, 3.2mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing...

Brand Name:ON Semiconductor

Model Number:NCS20074DTBR2G

... two N-channel MOSFETs or IGBTs in a half-bridge configuration. Its fast rise and fall time (15ns typical) and wide input voltage range (4.5V to 18V) make it ideal for high-frequency switching applications. Applications: DC-DC Converters, Motor Drives,