high performance rf power transistors

Brand Name:Hua Xuan Yang

Model Number:HXY1404S

Place of Origin:ShenZhen China

... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. 40V/12A R DS(ON) = 13mΩ(typ.)

Brand Name:Hua Xuan Yang

Model Number:HXY1404S

Place of Origin:ShenZhen China

... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. 40V/12A R DS(ON) = 13mΩ(typ.)

Brand Name:VBE

Model Number:VBE6006H

Place of Origin:CHINA

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Place of Origin:CN

Brand Name:Original Factory

Model Number:QM56032

QM56032 Wireless Communication Module High Performance RF Power Amplifier [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 ...

Place of Origin:PHILIPPINE

Brand Name:MOT

Model Number:MRF5177

...RF POWER TRANSISTOR NPN SILICON Description: …designed for VHK/UHF power amplifier applications.This device is optimized for rugged performance in 225-400MHz communications equipment. Applications: Performance @400MHz,28Vdc-Power Output=30W(Min) Gain=6.0dB(Min) Isothermal Design for Rugged Performance...

Place of Origin:Jiangsu, China

Brand Name:SZHUASHI

Model Number:YP40601625T

...Power Amplifier RF Power Transistor with Standard Features Product Description The YP40601625T is a 30-watt, internally matched GaN HEMT, designed for multiple applications with frequencies 4000 to 6000MHz, in particular 5700- 5900MHz. The performance is guaranteed for applications operating in the mentioned frequencies There is no guarantee of performance...

Brand Name:Original brand

Model Number:STWA65N60DM6

Place of Origin:Original

...Power Transistor STWA65N60DM6 Mosfet N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power TO-247 Feature • Extremely low RDS(on)*area and Qg and optimized capacitance profi le for light load conditions • Extremely high dv/dt • Optimized body diode recovery phase • Optimized softness APPLICATIONS • Charging stations for electric vehicles • LED lighting • Telecom • Servers • Solar inverters BENEFITS • Extremely high effi ciency performance

Categories:RF Power Amplifier Module

Country/Region:china

...High Power Amplifier Module High-Efficiency RF Power Amplifier for X-Band Applications The 8-10 GHz 50W Power Amplifier Module is a high-performance X-band RF amplifier designed for demanding wireless communication, radar, electronic warfare, instrumentation, and defense applications. Featuring advanced GaN technology, the module delivers outstanding output power, excellent linearity, high...

Brand Name:in

Model Number:STAV58010P2

Place of Origin:CN

...low cost, in 4*4.5mm DFN plastic package. It can support CW, pulse or any modulated signal. There is no guarantee of performance when this part is used outside of stated frequencies. Typical Class AB Single--Carrier W--CDMA Characterization Performance:

Brand Name:ST

Model Number:TIP122

Place of Origin:Original Factory

...Transistors TIP122 Darlington NPN 100V 5A 2000mW TO220 Power Transistor TIP120, TIP121, TIP122 TIP125, TIP126, TIP127 Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance...

Brand Name:Semelab / TT Electronics

Model Number:D2085UK

Place of Origin:UK

...RF POWER TRANSISTOR MOSFET Manufacturer: TT Electronics Product Category: TT Electronics Brand: Semelab / TT Electronics The D2085UK is a push-pull RF power transistor MOSFET that operates at a voltage of 28V and can handle a power output of 120W. It is designed for use in the frequency range of 1MHz to 1000MHz. Silicon MOSFET: MRF140: RF MOSFET Line, 30W, up to 400MHz, 28V [1] MRF134: Broadband RF Power

Brand Name:Anritsu

Model Number:MG3692A

Place of Origin:Japan

... from 10 MHz to 20 GHz in a single instrument. This instrument offers all the capabilities of a high-end microwave generator at the highest performance level, leveraging the technology-leading phase noise performance of its predecessor, the 69C series. The

Brand Name:Texin

Place of Origin:Guang Dong China

High Performance Broadband Power Amplifier Module Product Overview The Broadband Power Amplifier is a high-performance PA power amplifier module designed to deliver exceptional amplification across a wide frequency spectrum. Engineered for versatility and reliability, this broadband power...

Model Number:BFS505

Place of Origin:CHINA

...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF...

Brand Name:ELT(Elite)

Model Number:SMP-K506-68

Place of Origin:China

.... It features a small form factor and lightweight design, along with exceptional seismic performance and a broad operating bandwidth. The SMP operates within a frequency range of up to 30GHz (our high-performance SMP connectors can extend up to 40GHz).

Brand Name:Rogers

Model Number:RT/duroid 6035HTC

Place of Origin:USA

... heights, you need to get your hands on Rogers' exceptional RT/duroid 6035HTC PCBs. These double-sided boards are engineered to handle the most demanding applications, from high-power RF and microwave amplifiers to power combiners, filters, and

Brand Name:Infineon

Model Number:IKW25N120T2

Place of Origin:Original Factory

IKW25N120T2,1200 V, 25 A IGBT discrete with anti-parallel diode in TO-247 package Insulated Gate Bipolar Transistor IKW25N120T2 K25T1202 1200V 25A Igbt Transistors Description 1200 V, 25 A IGBT discrete with anti-parallel diode in TO-247 package Infineon ...

Brand Name:ZSX

Place of Origin:China

Model Number:UHF-C-J-3/UHF-C-J-3-RG58-1M

High Performance RF Jumper UHF Male Crimp RG58 Cable Assembly Product Overview Engineered for reliable RF connectivity, this UHF RG58 cable assembly features precision-crimped PL259 connectors and high-quality 50Ω RG58 coaxial cable. Built with durable ...

Brand Name:P-AMF

Model Number:H600

Place of Origin:china

... of Class B with the sound quality of Class A, balancing performance and thermal management. Bridgeable Channels: Some models allow bridging of the two channels to create a single high-power output channel, useful for driving subwoofers or larger speakers.

Brand Name:ESTEL

Model Number:GPAD201M5-1B

Place of Origin:Shenzhen, China (Mainland)

... Voltage: DC5V Model Number: GPAD201M5-1B Output Power: 200W Product Name: Industrial Power Supplies Input Frequency: 47~63Hz Certification: ISO9001, CE, 3C, FCC, TLC Max. Output Current: 40A Application: Industrial Equipment Power Factor: 0.95 Payment &