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All high power 100v n channel mosfet wholesalers & high power 100v n channel mosfet manufacturers come from members. We doesn't provide high power 100v n channel mosfet products or service, please contact them directly and verify their companies info carefully.
| Total 68 products from high power 100v n channel mosfet Manufactures & Suppliers |
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Place of Origin:China Brand Name:ONSEMI Model Number:FDM3622 High Power MOSFET FDM3622 N-Channel PowerTrench® MOSFET 100V, 4.4A, 60mΩ High Power MOSFET FDM3622 N-Channel PowerTrench® MOSFET 100V, 4.4A, 60mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and ... |
Sunbeam Electronics (Hong Kong) Limited
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Brand Name:Infineon Technologies Model Number:IRFP4468PBF Place of Origin:Multi-origin ...resistance of 0.024Ω. 4. Low gate charge of 25nC. 5. High speed switching of over 30V/ns. 6. Ease of paralleling. 7. Low thermal resistance. 8. Lead-free (RoHS compliant). Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to |
Shenzhen Sai Collie Technology Co., Ltd.
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Brand Name:ZETEX Model Number:ZXMN10A09KTC Place of Origin:Original 100V N-CHANNEL ENHANCEMENT MODE MOSFET IN DPAK SUMMARY V(BR)DSS=100V : RDS(on)=0.085 ; ID=7.7A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power... |
ChongMing Group (HK) Int'l Co., Ltd
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Brand Name:Hua Xuan Yang Model Number:G120P06LR1D Place of Origin:ShenZhen China ...Mosfet Power Transistor / N Channel Mosfet Transistor Mosfet Power Transistor Introduction MOSFET technology is ideal for use in many power applications, where the low switch on resistance enables high levels of efficiency to be attained. There is a number of different varieties of power MOSFET available from different manufacturers, each with its own characteristics and abilities. Many power MOSFETs... |
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong |
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Brand Name:REASUNOS Place of Origin:Guangdong, CN Product Description: High Voltage MOSFET is a type of power mosfet, which is designed for high voltage applications. It is characterized by its embedded FRD high voltage MOSFET technology, ultra-high voltage MOSFET application, low leakage and variable ... |
Reasunos Semiconductor Technology Co., Ltd.
Guangdong |
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Brand Name:ON Model Number:FDMC86139P Place of Origin:ON ...Technology: Si Mounting Style: SMD/SMT Package / Case: Power-33-8 Transistor Polarity: P-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 100 V Id - Continuous Drain Current: 4.4 A Rds On - Drain-Source Resistance: 67 ... |
QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
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Brand Name:Infineon Model Number:IRF9540NPBF Place of Origin:Original Factory ...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in |
Shenzhen ATFU Electronics Technology ltd
Guangdong |
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Brand Name:IOR Model Number:IRF540NS Place of Origin:CHINA ... Avalanche Rated Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast ... |
Shenzhen Koben Electronics Co., Ltd.
Guangdong |
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Place of Origin:China Brand Name:Lingxun ...Channel High Power MOSFET Surface Mount Industrial Mosfet Transistor Product Description: Our High Power MOSFET is designed to operate in a wide temperature range, from -55°C to +175°C, making it suitable for use in extreme environments. Its N-type configuration ensures optimal performance, providing high efficiency and reliability. Our High Power MOSFET... |
Guangdong Lingxun Microelectronics Co., Ltd
Guangdong |
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Brand Name:JUYI Model Number:JY11M Place of Origin:China ...Channel Enhancement Mode Power MOSFET GENERAL DESCRIPTION The JY11M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. FEATURES ● 100V... |
Shanghai Juyi Electronic Technology Development Co., Ltd
Shanghai |
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Brand Name:ON Semiconductor Model Number:BSS123LT1G Place of Origin:China BSS123LT1G N-Channel MOSFET Low 170mandOmega; RDS(on) 20V VDS 100V Avalanche Rated Ideal for low power switching load switching and DC-DC conversion with its SOT-23 package and ESD protection andnbsp; Features andbull;HBM ... |
TOP Electronic Industry Co., Ltd.
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Brand Name:Original Factory Model Number:IPD35N10S3L26ATMA1 Place of Origin:CN ... charge for smaller driver output stage. Specification Of IPD35N10S3L26ATMA1 Part Number: IPD35N10S3L26ATMA1 Mounting Style: SMD/SMT Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 100 V Rds On - Drain-Source Resistance: 20 mOhms Qg - |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Infineon Technologies Model Number:BSC109N10NS3G Place of Origin:Original BSC109N10NS3G npn power transistors 109N10NS n-channel mosfet 100V 63A TDSON-8 OptiMOS Features · Very low gate charge for high frequency applications ·Optimized for dc-dc conversionN-channel, normal level ·Excellent gate charge x RDs(on)product (FOM) ·... |
Shenzhen Retechip Electronics Co., Ltd
Guangdong |
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Brand Name:BigFlier Model Number:F-22S-400A-B Place of Origin:ShenZhen RC Hobby Mosfet Waterproof High Power ESC 22S 400A With 12 Months Warranty Basic information: Voltage Current Size(mm) weight(g) BEC (Volts/Amps) Box Programming support Computer Programming support Firmware update 3-22S 400A 120*64*38mm 700g OPTO Yes Yes ... |
Shenzhen Flier Electronic Co., Ltd.
Guangdong |
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Brand Name:INFINEON Model Number:IPD082N10N3 Place of Origin:original ...channel MOSFET transistor. The following are its applications, conclusions, and parameters: Application: Used as a high-voltage and high-power load switch Used as a switch for converters and regulators Conclusion: High voltage capability: Vds=100V Low conduction resistance: Rds (on)=8.2m Ω (typ.) Fast switching speed: td (on)=16ns (typ.), td (off)=60ns (typ.) High... |
HK LIANYIXIN INDUSTRIAL CO., LIMITED
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Brand Name:VISHAY Model Number:SI2301CDS-T1-E3 Place of Origin:Philippines SI2301CDS - T1 - E3 high power mosfet transistors P - Channel 20-V (D-S) MOSFET P-Channel 20-V (D-S) MOSFET FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID... |
Anterwell Technology Ltd.
Guangdong |
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Brand Name:Original brand Model Number:IRF640NSTRLPBF Place of Origin:Original Manufacturer ...CHANNEL MOSFET TRANSISTOR 200V SURFACE MOUNT D2PAK Goods Condition: Brand New Part Status: Active Lead Free / Rohs: Complaint Function: Mosfet Mounting Type: Surface Mount Package: D2PAK High Light: high power mosfet transistors , n channel mosfet transistor IRF640NSTRLPBF N-Channel Mosfet... |
Shenzhen Huahao Gaosheng Technology Co., Ltd
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Brand Name:INFINEON Model Number:IRF7342TRPBF ...Channel MOSFETProduct Introduction of Infineon IRF7342TRPBF N-Channel MOSFET 1. Product Overview Infineon IRF7103342TRPBF is a high-performance N-channel enhancement-mode metal-oxide-semiconductor field-effect transistor (MOSFET) developed by Infineon Technologies AG—a global leader in semiconductor solutions for power management and industrial applications. As a key component in high... |
Berton Electronics Limited
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Brand Name:Toshiba Model Number:TK100E10N1,S1X(S Place of Origin:JAPAN Product Description: Toshiba TK100E10N1,S1X(S Power IC Chip, which is a 650V, 30A MOSFET N, is an excellent choice for applications that require excellent performance even in extreme conditions. With its operating temperature range of -55℃ ~ +150℃ and ... |
Shenzhen Zhaocun Electronics Co., Ltd.
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Place of Origin:ShenZhen China Brand Name:OTOMO Model Number:8205A ...MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and Current Handing Capability z Surface Mount Package APPLICATION z Battery Protection z Load Switch z Power... |
Beijing Silk Road Enterprise Management Services Co.,LTD
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