high power devices sic wafer

Brand Name:ZMSH

Model Number:6H-P SiC

Place of Origin:CHINA

... conductivity and high temperature resistance, which is widely used in high-power and high-frequency electronic devices. P-type doping is achieved by introducing elements such as aluminum (Al), which makes the material electropositive and suitable for

Brand Name:ZG

Model Number:MS

Place of Origin:CHINA

... material , with unique electrical properties and excellent thermal properties , compared to silicon wafer and GaAs wafer , SiC wafer is more suitable for high temperature and high power device application . SiC wafer can be supplied in diameter 2

Brand Name:SWT

Model Number:SW-PA-24002500-37C

Place of Origin:China

High-Power Device 2400-2500MHz 5W RF Power Amplifier for 2.4GHz Wireless Communication The 2400-2500MHz 5W RF power amplifier is a high-power device with the following key features: Frequency Range: Covers 2400MHz to 2500MHz, suitable for 2.4GHz wireless communication (such as Wi-Fi and Bluetooth). Output Power: Provides 5W (37dBm) output, enhancing signal transmission distance and coverage. High...

Place of Origin:Shenzhen zhuhai

Brand Name:TAC OEM ODM

Model Number:LFR18500P-900mAh

...Power Type for High Power Devices Features For Cylindrical 3.2V LiFePO4 Battery LFR18500P 900mAh Power Type for High Power Devices Excellent abuse tolerance and environmentally friendly with Rohs Certification Excellent calendar life circle life over 2000times Application for Cylindrical 3.2V LiFePO4 Battery LFR18500P 900mAh Power Type for High Power Devices Portable high power devices...

Brand Name:senring

Model Number:203101100

Place of Origin:CHINA

... high-current slip ring developed by SenRing for electroplating equipment, strengthening machines, and other high-power high-current devices. It has a single-channel 100A high-current specification and is installed with a terminal. It is easy to install,

Brand Name:BAKTH / Neutral / OEM

Model Number:BAKTH-0016S030A-0029-01

Place of Origin:Dongguan China

BAKTH-0016S030A-0029-01 15S Lithium Battery Overcharge/Overdischarge/Short-Circuit Protection Board for High-Power Devices The BAKTH-0016S030A-0029-01 is a high-voltage, high-reliability protection board optimized exclusively for 15-cell series (15S) ...

Place of Origin:Beijing,China

Brand Name:sunrise

... CO2 heads, 1 normal cutting head laser tube: Metal RF tube from USA Coherent company Power: 30W, 40W, 60W optional What Is The Working Principle Of Fractional Laser CO2 cutting machine ? Fractional ablative CO2 resurfacing ...

Place of Origin:Beijing Cjina

Brand Name:LEADBEAUTY

Model Number:LB-DL808

Diode laser permanent hair removal machine with high power device Treatment Principle: Using thermal damage theory, the abundant melanin absorbs laser energy and the temperature rises rapidly, under this situation the hair follicle and hair shaft are ...

Brand Name:LF

Model Number:FM -LF11-11

Place of Origin:Guangdong, China

Product details Brand LF Material Aluminum Alloy,Steel,Brass or Customized Color Customized MOQ 1pc Sample Acceptable Certification CE, RoHS, GS, ISO9001 Inspection 100% inspection Tolerance +/-0.1mm Shipping By air or By sea Trade Terms FOB,CIF,EXW ...

Brand Name:PAM-XIAMEN

Place of Origin:China

... generation semiconductor materialwith unique electrical properties and excellent thermal properties for high temperature and high power device application. SiC wafer can be supplied in diameter 2~6 inch, both 4H and 6H SiC , N-type , Nitrogen doped , and

Brand Name:ZMKJ

Model Number:6inch 150mm SiC Substrate

Place of Origin:CHINA

...SiC) Substrates 4H and 6H Epi-Ready SiC Substrate/Wafers (150mm, 200mm) Silicon Carbide(SiC) wafer N Type 6inch SIC Wafer 4H-N Type production grade sic epitaxial wafers GaN layer on sic About Silicon Carbide (SiC)Crystal Shanghai Famous Trade Co., Ltd 150 mm SiC wafers offer device manufacturers a consistent, high-quality substrate for developing high-performance power devices. Our SiC...

Brand Name:HMT

Place of Origin:CHINA

...SiC wafer manufacturer SiC substrate supplier Homray Material Technology offers semiconductor silicon carbide wafers,4H-SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate,Which is applied in GaN epitaxy device,power devices,high-temperature device...

Brand Name:CSIMC

Model Number:Sapphire (Al2O3)

Place of Origin:China

...Wafer for High-End Microelectronics and Power Devices our premium Sapphire Wafers, the cornerstone of advanced technology and cutting-edge innovation. Renowned for their exceptional hardness, chemical stability, and optical transparency, Sapphire Wafers are the ideal choice for applications ranging from high-power optoelectronics and LED manufacturing to MEMS and biosensors. Our Sapphire Wafers...

Brand Name:CAEC

Place of Origin:China

...IC chip, fine ceramic, optical glass, gem, metal and cemented carbide. Main features Good surface quality and high efficiency Heat dissipated quickly Easy to clean and no poisonous materials contained Complies with RoSH standard. Package: in bottles Spec:

Brand Name:Keysight/Agilent

Model Number:B1505A

Place of Origin:Malaysia

...Power Device Analyzer / Curve Tracer Description of Keysight (Agilent) B1505A The Agilent B1505A Power Device Analyzer / Curve Tracer is the only single box solution available today with the capability to characterize high power devices from the sub-picoamp level up to 3000 volts and 40 amps. These capability covers evaluation for new power device using wide band gap materials such as silicon carbide (SiC...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

High Power SiC Semiconductor - Unprecedented Performance and Efficiency *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-...

Brand Name:Analog Devices Inc.

Model Number:HMC788ALP2ETR

Place of Origin:Multi-origin

... over the 0.5 to 2.7GHz frequency range with a maximum output power of 50W. The device offers an extremely wide instantaneous bandwidth, high efficiency, and excellent linearity performance. Features: • Power Gain of 27dB • Maximum Output Power of

Brand Name:Original Factory

Model Number:IMBG65R163M1H

Place of Origin:CN

SiC Trench Power Device IMBG65R163M1H TO-263-8 Package 650 V Transistors Product Description Of IMBG65R163M1H IMBG65R163M1H suitable for high temperature and harsh operations,it enables the simplified and cost effective deployment of the highest system ...

Brand Name:ZCQ

Model Number:ZCQ

Place of Origin:China

...Wafer Carrier Boat For Wafer Diffusion From China Supplier We can produce different shapes and dimensions of quartz boat according to customer’s drawing. Quartz boat is resistant to high temperature and corrosion; it is an ideal device in laboratory. Quartz instrument Quartz Crucible (Low & Tall Form) Quartz Beaker (Low & Tall Form) Quartz Funnel Bubble Quartz device...