high power enhancement mode power mosfet

Brand Name:Hua Xuan Yang

Model Number:60P03D TO-252

Place of Origin:ShenZhen China

...Enhancement Mode Mosfet Power Transistor 60P03D TO-252 30V Mosfet Power Transistor DESCRIPTION The AP60P03D uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge .Thisdevice is well suited for high current load applications. Mosfet Power Transistor GENERAL FEATURES V DS =-30V,I D =-60A R DS(ON) <15mΩ @ V GS =-10V R DS(ON) <20mΩ @ V GS =-4.5V High...

Brand Name:onsemi

Model Number:FDC637BNZ

Place of Origin:original

FDC637BNZ N-Channel Enhancement Mode MOSFET for High Efficiency Power Electronics Applications Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @ 25°C 6.2A (Ta) Drive ...

Brand Name:DIODES

Model Number:ZXMP10A17E6TA

Place of Origin:Original

...ENHANCEMENT MODE MOSFET linear power mosfet trench power mosfet FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • SOT23-6 package APPLICATIONS • DC–DC Converters • Power Management functions • Disconnect switches • Motor control DESCRIPTION This new generation of Trench MOSFETs...

Categories:High Power MOSFET

Country/Region:china

High Power MOSFET NTMFD1D4N02P1E MOSFET, Power, 25V Dual N-Channel Power Clip [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in ...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

...High Power MOSFET is an advanced semiconductor device designed to meet the demanding requirements of modern electronic applications. As a high power n channel MOSFET, this product is engineered to deliver exceptional performance in a variety of high-stress environments, making it an ideal choice for applications such as solar inverters, high-voltage DC/DC converters, motor drivers, UPS power supplies, switching power

Place of Origin:GuangZhou,China

Brand Name:HOT DEVICES

Model Number:S-1500

... sound industry, more and more people are seeking for amplifiers with light weight, high power output, and high efficiency. Switch mode power amplifiers are a good solution. Our S-700,900,1200,1500 are one series Class TD switch mode power amplifier with

Brand Name:ED8

Model Number:T1515-20mH Vertical

Place of Origin:China,shenzhen city.

High-Power common-mode inductance T1515 Vertical flat wire Product performance: The common mode inductor is essentially a two-way filter: on the one hand, it needs to filter out the common mode electromagnetic interference on the signal line, and on ...

Brand Name:CJ

Model Number:CJ2310 S10

Place of Origin:CHINA

CJ2310 S10 NPN PNP Transistors N-Channel MOSFET Plastic-Encapsulate MOSFETS DESCRIPTION The CJ2310 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for ...

Brand Name:DK

Model Number:DK-YSM 4000AR

Place of Origin:China

...result in higher processing efficiency. Product features ♦Ultra-high stability ♦High WPE ♦Super processing capacity Product specification Optical Parameters DK-YMM 4000 Operation Mode CW/Modulation Polarization State Random Beam Quality M2 <10@100µm

Brand Name:New Light

Model Number:ST female to male

Place of Origin:China

Fiber Optic Attenuator ST female to male simplex single mode ( 5db ) attenuation Product Description Product Attributes ST/UPC Fiber Optical Attenuator 1-30dB is available Good quality Best price Fast delivery ST/UPC 10dB Fixed Fiber Optical Attenuator ...

Brand Name:xjsr

Model Number:chip inductor

Place of Origin:Guangdong,shenzhen

Product Description: Chip Power Inductor is a chip-mountable, chip-embedded and chip mounted inductor that features a low DCR and high saturation current. It is designed to meet the requirements of high-frequency power conversion applications, such as DC-...

Place of Origin:Shenzhen

Brand Name:Chloe

Model Number:T6Nightriding

Specifications 1 Light source:1xcree t6 2 Brightness: 1200lms 3 Life span: 10000 Hs 4 Battery pack:8.4V/4400mAh 5 Run time 3 hs 6 Size: L20*W18*H6cm Flash modes: 3 flash modes(High-Low-Strobe Net weight: 0.5KG Power:4x18650 lithium battery pack Battery ...

Brand Name:JUYI

Model Number:JY4P7M

Place of Origin:China

...on‐resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in high current load applications. FEATURES ● ‐40V/‐70A, RDS(ON) ≤10mΩ@VGS=‐10V ● High density cell design for

Model Number:BSP315

Place of Origin:China

Signal Power Mosfet Transistor P Channel Enhancement Mode BSP315 SIPMOS • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8...-2.0 V Drain-source breakdown voltage V(BR)DSS = ƒ(Tj ) Transient thermal impedance Zth ...

Brand Name:JUYI

Model Number:JY8N5M

Place of Origin:China

... and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Get more details

Brand Name:Freescale/Motorola

Model Number:MRF173

Place of Origin:USA

...Enhancement Mode MOSFETs RF Power Transistor Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of these devices make possible solid state transmitters for FM broadcast or TV channel frequency bands. 1, Guaranteed Performance at 150 MHz, 28 V: Output Power...

Place of Origin:MALAYSIA

Brand Name:MOTOROLA

Model Number:SRF6S19140HS

SRF6S19140HS is a N-Ch Enhancement Mode Power MOSFET. Part NO: SRF6S19140HS Brand: MOTOROLA Date Code: 03+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These ...

Brand Name:FORTUNE

Model Number:FS8205A

Place of Origin:TAIWAN

...Enhancement-Mode MOSFET (20V, 6A) 1.Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V) 2.Features RDS(on)=38mΩ@VGS=2.5V, ID=5.2A; RDS(on)=25mΩ@VGS=4.5V, ID=6A • High Density Cell Design for Ultra Low On-Resistance • High Power...

Brand Name:APEC

Model Number:AP4953GM

Place of Origin:Original Factory

INTEGRATED CIRCUIT CHIP AP4953GM --P-CHANNEL ENHANCEMENT MODE POWER MOSFET Quick Detail: P-CHANNEL ENHANCEMENT MODE POWER MOSFET Specifications: part no. 　AP4953GM Manufacturer 　APEC supply ability 　3000 datecode 　2007+ package SOP　 remark new...

Brand Name:NXP Semiconductors

Model Number:SI2304DS,215

Place of Origin:China

...MOSFET with Ultra-Low 45mandOmega; RDS(on) SOT-23 Package High Performance Enhanced Efficiency Power Management and Logic Level Gate Drive for Space-Constrained Designs andnbsp; Features TrenchMOSandtrade; technology Very fast switching Subminiature surface mount package. andnbsp; Applications Battery management High speed switch Low power DC to DC converter. andnbsp; Description N-channel enhancement mode...