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All high power mosfet 600v wholesalers & high power mosfet 600v manufacturers come from members. We doesn't provide high power mosfet 600v products or service, please contact them directly and verify their companies info carefully.
| Total 2367 products from high power mosfet 600v Manufactures & Suppliers |
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Brand Name:Infineon Technologies Model Number:SPW20N60C3 Place of Origin:China Infineon MOSFET N-Ch 650V 20.7A TO247-3 CoolMOS C3,600V CoolMOS™ C3 is Infineon's third series of CoolMOS™ Replacement for 600V CoolMOS™ C3 is CoolMOS™ P7 600V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the "working... |
Shenzhen Hongxinwei Technology Co., Ltd
Guangdong |
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Brand Name:HT Model Number:F16N65L TO-220F-3L Place of Origin:China ... power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in |
Shenzhen Hunt Electronics Co., Ltd
Guangdong |
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Brand Name:Huixin Model Number:H10N65 Place of Origin:China ...High Voltage Mosfet 650V 10A High Accuracy RoHS Compliant TO-220F Applications Adapter & Charger SMPS Standby Power AC-DC Switching Power Supply LED driving power Features Low On Resistance Low Gate Charge Peak Current vs Pulse Width Curve RoHS Compliant Ordering Information Part Number: H10N65 Specifications: 600V... |
Guangdong Huixin Electronics Technology Co., Ltd.
Guangdong |
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Brand Name:IR Original Model Number:IR21094STRPBF Place of Origin:Original & New ...high voltage, high speed power MOSFET and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high... |
Shenzhen ATFU Electronics Technology ltd
Guangdong |
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Brand Name:Mersen Model Number:NH1GG69V250P Place of Origin:China ...-isolated gripping lugs Double indicator 0% cadmium Applications gG: general purpose cable and line protection Description The NH1GG69V250P is a high-power Silicon Carbide (SiC) MOSFET module engineered for the most |
TOP Electronic Industry Co., Ltd.
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Place of Origin:PHILIPPINE Brand Name:Fuji Electric Model Number:FMH23N50E ...power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Specifications: part no |
Mega Source Elec.Limited
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Brand Name:CN Model Number:ABC cable Place of Origin:Henan, China (Mainland) ... for tem service at construction sites, as a service drop (power pole to service entrance) as a secondary cable (Pole to Pole), or street lighting. For service at 1000V or lower at a maximum conductor temperature of ... |
CN Cable Group Co., Ltd.
Henan |
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Brand Name:Original Factory Model Number:IPT020N10N5ATMA1 Place of Origin:China Power MOSFET Original Integrated Circuit IPT020N10N5ATMA1 Product Description Less paralleling required Increased power density Reduced switching and conduction losses Product Specifications Part Number: IPT020N10N5ATMA1 FET Type: N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 273W (Tc) Series: OptiMOS™5 Technology: MOSFET... |
Shenzhen Tengshengda ELECTRIC CO., LTD.
Guangdong |
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Brand Name:Jingjie Model Number:GVT Place of Origin:China ...: 600V Phase number: 3 phase Frequency: 60Hz Power factor: 0.45 ~ 0.5 (compensation) 1 ~ 0.9 (compensation) The three-phase power supply current unbalanced degree: less than 10% Maximum melting rate: 5t/h Max capacity: 12.0t Minimum capacity: 1.... |
Wuxi Huadong Industrial Electrical Furnace Co.,Ltd.
Jiangsu |
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Brand Name:Infineon Technologies/International Rectifier IOR Model Number:IRLR3915TRPBF ... Semiconductor Products N-Channel 55 V 30A (Tc) 120W (Tc) Surface Mount D-Pak Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are |
Guangzhou Topfast Technology Co., Ltd.
Guangdong |
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Brand Name:Rigoal Model Number:SYW1710P-2P/SYW1710S-2P Place of Origin:China Product Description: Waterproof Power Connector is a reliable and durable connection solution for both indoor and outdoor applications. It is designed to provide a secure connection and reliable performance in even the harshest environments. It is ... |
Shenzhen Rigoal Connector Co.,Ltd.
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Brand Name:ZMSH Place of Origin:China ...high-power industrial systems is driving demand for semiconductor devices that can handle higher voltages, greater power densities, and improved efficiency. Among wide bandgap semiconductors, silicon carbide (SiC) has emerged as the material of choice due to its wide bandgap, high... |
SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai |
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Brand Name:GEZHI or OEM Model Number:High Power Optical Circulator Place of Origin:China ...High Power Circulator Low insertion loss 780-1080 nm High Power Optical Circulator for Fiber Amplifier High Power Optical Circulator GEZHI high power optical circulator is designed for high power applications. It features small size, bandwidth, stable performance, wide temperaturerange,high isolation, low loss, low standing wave,high The characteristics of intermodulation and high power Features & Applications of High Power |
Gezhi Photonics (Shenzhen) Technology Co., Ltd.
Guangdong |
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Place of Origin:USA Brand Name:ON Semiconductor Model Number:NTHD3100CT1G ... - Power MOSFET 20 V, +3.9 A /−4.4 A, Complementary ChipFET. Detailed Description of NTHD3100CT1G: EIS Part Number: EIS-NTHD3100CT1G Manufacturer Part Number: NTHD3100CT1G Manufacturer / Brand: ON Semiconductor Brief Description: Power MOSFET ... |
Excellent Integrated System LIMITED (EIS LIMITED)
HongKong |
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Place of Origin:USA Brand Name:ON Semiconductor Model Number:NTHD3100CT1G ... - Power MOSFET 20 V, +3.9 A /−4.4 A, Complementary ChipFET. Detailed Description of NTHD3100CT1G: EIS Part Number: EIS-NTHD3100CT1G Manufacturer Part Number: NTHD3100CT1G Manufacturer / Brand: ON Semiconductor Brief Description: Power MOSFET ... |
Excellent Integrated System LIMITED (EIS LIMITED)
HongKong |
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Brand Name:VBE Model Number:VBE-8IS Place of Origin:China ... Remote control available to ON/OFF the jammer Output power can be adjustable Each frequency channel can be controlled separately Frequency ranges selectable Product Applications: Prisons, Recording Studios, Banks, Contract ... |
VBE Technology Shenzhen Co., Ltd.
Guangdong |
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Brand Name:YEWY Model Number:UY2500 Place of Origin:GUANG ZHOU,CHINA ...advantages of the high power battery charger is its high charging speed. With a charging current of up to 30 amps, this charger can quickly and efficiently charge large batteries in a short amount of time. Another advantage of the high power battery ... |
Guangzhou Yunyang Electronic Technology Co., Ltd.
Guangdong |
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Brand Name:Hanhui Model Number:HH-424-126×1-xx-5050 Place of Origin:China ... The light transmittance of our lens is 92%. (2)High quality PC material We use high quality PC materials,and we also can specify the materials. (3)Convenient installation Screw installation, convenient and fast. (4)Waterproof Fitted with silicone gasket, |
Shenzhen Hanhui Photoelectricity Co.,Ltd
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Brand Name:TX TELSIG Model Number:TX-T80W Place of Origin:China Black High Power Mobile Phone Jammer For 2G / 3G / 4G / 5G 5.0kg Weight TX-80W is a high power jammer, it has 8 frequency bands and each band power 10W, the output 80W in total can effectively get rid of the signal threat in seconds by jamming. The Jamming... |
Shenzhen TeXin electronic Co., Limited
Guangdong |