high power mosfet fet enhancement mode

Place of Origin:China

Brand Name:ONSEMI

Model Number:NDC7001C

High Power MOSFET NDC7001C Enhancement Mode Field Effect Transistor 60V [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and ...

Brand Name:Lingxun

Place of Origin:China

...Enhancement Mode High Power MOSFET For Power Supplies Features • Fast Switching • Low ON Resistance • Low Gate Charge • 100% Single Pulse avalanche energy Test APPLICATIONS • HIGH EFFICIENCY SWITCH • Motor driven • Ammeter • UPS power Q1.Who are we? A:We are based in Guangdong, China,factory start from 2012,is a national high-tech enterprise that focuses on packaging and testing of power...

Brand Name:onsemi

Model Number:FDB8447L

Place of Origin:original

...) @ Vgs 52 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2620 pF @ 20 V FET Feature - Power Dissipation (Max) 3.1W (Ta), 60W (Tc)

Brand Name:JUYI

Model Number:JY8N5M

Place of Origin:China

... and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Get more details

Brand Name:Anterwell

Model Number:DM0565R

Place of Origin:original factory

FSDM0565R Green Mode Fairchild Power Switch (FPSTM) Features • Internal Avalanche Rugged Sense FET • Advanced Burst-Mode operation consumes under 1 W at 240VAC & 0.5W load • Precision Fixed Operating Frequency (66kHz) • Internal Start-up Circuit • Pulse...

Model Number:FQPF10N20C

Place of Origin:original factory

...MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high

Brand Name:Hua Xuan Yang

Model Number:AP3N10BI

Place of Origin:ShenZhen China

Enhancement Mode N Channel Mosfet Power Transistor Low Voltage 100V N Channel Mosfet Power Working and Characteristics The construction of the power MOSFET is in V-configurations, as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

... of applications, such as solar inverter, high-voltage DC/DC converter, motor driver, UPS power supply, switching power supply, charging pile, etc. High Power MOSFET is a reliable, cost-effective solution for high voltage and high power applications. It

Brand Name:JUYI

Model Number:JY4N8M

Place of Origin:China

...Enhancement Mode Power surface mount MOSFET for BLDC motor driver GENERAL DESCRIPTION: The JY4N8M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on‐resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power...

Brand Name:Freescale

Model Number:MRF6V2150NBR1

Place of Origin:USA

MRF6V2150NBR1 RF Power Transistors N-Channel Enhancement-Mode Lateral MOSFETs Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Qualified Up to a Maximum of 50 VDD Operation • Integrated ESD ...

Brand Name:IXYS

Model Number:IXFK27N80Q

Place of Origin:Original Factory

IXFK27N80Q N Channel Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS advanced low Qg process • Low ...

Place of Origin:MALAYSIA

Brand Name:MOTOROLA

Model Number:SRF6S19140HS

SRF6S19140HS is a N-Ch Enhancement Mode Power MOSFET. Part NO: SRF6S19140HS Brand: MOTOROLA Date Code: 03+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These ...

Brand Name:FORTUNE

Model Number:FS8205A

Place of Origin:TAIWAN

...Enhancement-Mode MOSFET (20V, 6A) 1.Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V) 2.Features RDS(on)=38mΩ@VGS=2.5V, ID=5.2A; RDS(on)=25mΩ@VGS=4.5V, ID=6A • High Density Cell Design for Ultra Low On-Resistance • High Power...

Brand Name:APEC

Model Number:AP4953GM

Place of Origin:Original Factory

INTEGRATED CIRCUIT CHIP AP4953GM --P-CHANNEL ENHANCEMENT MODE POWER MOSFET Quick Detail: P-CHANNEL ENHANCEMENT MODE POWER MOSFET Specifications: part no. 　AP4953GM Manufacturer 　APEC supply ability 　3000 datecode 　2007+ package SOP　 remark new...

Brand Name:OTOMO

Model Number:1503C1

Place of Origin:ShenZhen China

..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the

Brand Name:Original Factory

Model Number:IMBG65R163M1HXTMA1

Place of Origin:CN

...Power MOSFET Transistors TO-263-8​ Product Description Of IMBG65R163M1HXTMA1 IMBG65R163M1HXTMA1 SMD Compact Package SiC MOSFET, CoolSiC™ MOSFET technology enhances the unique benefits of device performance, robustness and ease of use by maximizing the powerful physical properties of silicon carbide. Specification Of IMBG65R163M1HXTMA1 Part Number: IMBG65R163M1HXTMA1 Series CoolSIC™ M1 FET...

Brand Name:IXYS

Model Number:IXFK140N30P

Place of Origin:Germany

...Power Mosfet Hiperfet TO-264 300V 140A Space Savings N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode VDSS = 300V I D25= 140A RDS(on)≤24mΩ DS99557F(5/08)trr≤200ns Features • Fast intrinsic diode • Avalanche Rated • Low RDS(ON) and QG • Low package inductance Advantages z Easy to mount z Space savings z High power density Applications • DC-DC coverters • Battery chargers • Switched-mode and resonant-mode power

Brand Name:ST

Model Number:STPS15L30C-TR STS1DNC45 STV6419AG

Place of Origin:Original

Electronic components STPS15L30C-TR STS1DNC45 STV6419AG mosfet advantage price for original stock Feature • Enhancement mode transistor – Normally OFF switch • Ultra fast switching • No reverse-recovery charge • Capable of reverse conduction • Low gate ...

Categories:RF Transistors

Country/Region:china

SQ201 SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Manufacturer: POLYFET Product Category: MOSFETs RoHS: Details Technology:- Mounting Style: SMD/SMT Package / Case:- - Transistor Polarity:- - Number of Channels:- - Vds - Drain-Source ...

Brand Name:Vishay Semiconductor

Model Number:SIHF10N40D-E3

...Discrete Semiconductors SIHF10N40D-E3 Power Mosfets EU RoHS Compliant ECCN (US) EAR99 Part Status Active HTS 8541.29.00.95 Automotive No PPAP No Product Category Power MOSFET Configuration Single Channel Mode Enhancement Channel Type N Number of Elements...