high power mosfet power management

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

... Power Supplies, Switching Power Supplies, Charging Piles, and more. This High Frequency MOSFET is engineered for high efficiency and reliable performance in demanding environments. One of the key advantages of our High Power MOSFET is that it is based on

Brand Name:onsemi

Model Number:FDMC6675BZ

Place of Origin:original

FDM6675BZ High Frequency High Power MOSFET Power Electronics with Advanced Thermal Management FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 9.5A (Ta), 20A (Tc) Drive Voltage (...

Place of Origin:China

Brand Name:ONSEMI

Model Number:FDMA1032CZ

High Power MOSFET FDMA1032CZ 20V Complementary PowerTrench^® MOSFET High Power MOSFET FDMA1032CZ 20V Complementary PowerTrench® MOSFET [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic ...

Brand Name:VISHAY

Model Number:SI2301CDS-T1-E3

Place of Origin:Philippines

SI2301CDS - T1 - E3 high power mosfet transistors P - Channel 20-V (D-S) MOSFET P-Channel 20-V (D-S) MOSFET FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID...

Model Number:TC4420CPA

Place of Origin:original factory

TC4420 TC4429 6A HIGH-SPEED MOSFET DRIVERS FEATURES ■ Latch-Up Protected ............ Will Withstand >1.5A Reverse Output Current ■ Logic Input Will Withstand Negative Swing Up to 5V ■ ESD Protected ..................................................... 4kV...

Brand Name:HT

Model Number:F16N65L TO-220F-3L

Place of Origin:China

... power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

Brand Name:original

Model Number:CLA50E1200HB

Place of Origin:Original Factory

...HIGH POWER MOSFET TRANSISTORS / THYRISTOR FOR LINE FREQUENCY 1200V 50A Goods Condition: Brand New Part Status: Active Lead Free / Rohs: Complaint Function: Circuit Control Mounting Type: Through Hole Package: TO247 High Light: n channel mosfet transistor , n channel transistor CLA50E1200HB High...

Brand Name:Original brand

Model Number:NVHL040N65S3F

Place of Origin:Original

... to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is

Brand Name:IXYS

Model Number:CLA50E1200HB

Place of Origin:CN

...High Efficiency Thyristor for for line frequency 1200V 50A Features / Advantages: ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability Applications: ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power...

Brand Name:wolvesteam

Model Number:JM311059

Place of Origin:China

4 Bands Signal Jamming Device High Powerful Wireless Management Control For Military Units Product Description 1. Technique characteristic Output Interface Shield band of frequency RF Output Power RF OutputdBm CH1 900 - 990 MHz 41.0 dBm 22.0 dBm/30kHz CH2 ...

Brand Name:Hua Xuan Yang

Model Number:AOD442

Place of Origin:ShenZhen China

AOD442/AOI442 60V N-Channel MOSFET General Description The AOD442/AOI442 used advanced trench technology to provide excellent R DS(ON) and low gate charge. Those devices are suitable for use as a load switch or in PWM applications. Parameters Part Number ...

Brand Name:High Voltage Battery Management System

Model Number:RBMS07-S23-125A240V

Place of Origin:China

Model Number:PT4115B89E SOT 89

Place of Origin:United States

Brand Name:Driver IC

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Brand Name:UCHI

Model Number:SGM41519

Place of Origin:Dongguan China

...Management ICs High Input Voltage,3A Single-Cell Battery Chargerwith NVDC Power Path Management The SGM41519 is a battery charger and system power pathmanagement device with integrated converter and powerswitches for using with single-cell Li-Ion or Li-polymerbatteries. This highly...

Brand Name:Infineon

Model Number:IRFI4019HG-117P

Place of Origin:China

IRFI4019HG-117P 190A Power MOSFET 100V Ultra-Low Rds(on) 1.9mandOmega; TO-264 High Efficiency Robust Performance Superior Thermal Management and High Power Density for Demanding Applications andnbsp; Features Integrated Half-Bridge Package Reduces the Part...

Brand Name:JUYI

Model Number:JY12M

Place of Origin:China

...MOSFET for BLDC motor driver GENERAL DESCRIPTION The JY12M is the N and P Channel logic enhancement mode power field transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management...

Model Number:DRV8432DKDR

DRV8432DKDR DRV8432DKD DRV8432 HTSSOP36 IC Car CPU BGA Chipest,Car Module ICS Chips Automotive chips DRV84x2Dual Full-Bridge PWM Motor Driver Description The DRV841x2 are high-performance,integrated dual full-bridge motor driver with an advanced protection...

Brand Name:Hua Xuan Yang

Model Number:HXY1404S

Place of Origin:ShenZhen China

... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. 40V/12A R DS(ON) = 13mΩ(typ.)

Brand Name:onsemi

Model Number:FDA50N50

Place of Origin:Original Factory

...High Voltage Mosfet 48A 500V DMOS AC−DC Power Supply Transistor Description UniFET MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power...

Brand Name:IR Original

Model Number:IR21094STRPBF

Place of Origin:Original & New

...high voltage, high speed power MOSFET and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high...