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All high power mosfet sot 23 t r wholesalers & high power mosfet sot 23 t r manufacturers come from members. We doesn't provide high power mosfet sot 23 t r products or service, please contact them directly and verify their companies info carefully.
| Total 13 products from high power mosfet sot 23 t r Manufactures & Suppliers |
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Place of Origin:China Brand Name:ONSEMI Model Number:BSS123L High Power MOSFET BSS123L Power MOSFET 170 mA, 100 V, N-Channel SOT-23 [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, ... |
Sunbeam Electronics (Hong Kong) Limited
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Brand Name:onsemi Model Number:FDN360P Place of Origin:original FDN360P MOSFET Power Electronics SOT-23-3 Package Single P-Channel High Power Version of Industry Standard FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 2A (Ta) Drive Voltage (... |
Shenzhen Sai Collie Technology Co., Ltd.
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Place of Origin:ShenZhen China Brand Name:Hua Xuan Yang Model Number:8205A ...SOT-23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and Current Handing Capability z Surface Mount Package APPLICATION z Battery Protection z Load Switch z Power... |
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong |
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Place of Origin:ShenZhen China Brand Name:OTOMO Model Number:8205A ...SOT-23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and Current Handing Capability z Surface Mount Package APPLICATION z Battery Protection z Load Switch z Power... |
Beijing Silk Road Enterprise Management Services Co.,LTD
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Brand Name:ONSEMI Model Number:MMBT4403LT1G Place of Origin:Original ...−23 (Pb−Free) 3,000 / Tape & Reel MMBT4403LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel MMBT4403LT3 SOT−23 (Pb−Free) 10,000 / Tape & Reel Features • Pb−Free Package is Available NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI ... |
ChongMing Group (HK) Int'l Co., Ltd
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Brand Name:Anterwell Model Number:P4NK60ZFP Place of Origin:original factory Stock Offer (Hot Sell) Part No. Quantity Brand D/C Package MAX191BCWG+ 2338 MAXIM 16+ SOIC-24 MAX1932ETC+T 3044 MAXIM 13+ QFN MAX232EIDR 50000 TI 13+ SOP-16 MAX232IDW 9003 TI 11+ SOP-16 MAX253CSA+ 6562 MAXIM 14+ SOP-8 MAX3051EKA+T 3853 MAXIM 14+ SOT-23 ... |
Anterwell Technology Ltd.
Guangdong |
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Brand Name:UCHI Model Number:6206-3.3V Place of Origin:Dongguan China SOT-23 662K 6206 3.3V SOT23-3 SMD voltage regulator IC FEATURES - Fast switching speed. - High conductance - Connected in series - Surface mount package ideally suited for automatic insertion APPLICATIONS - For general purpose switching appilication. ... |
Guangdong Uchi Electronics Co.,Ltd
Guangdong |
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Brand Name:Toshiba Model Number:SSM3K361R,LF Place of Origin:China ...MOSFET with Ultra-Low 40mandOmega; RDS(on) SOT-23 Package High Power Density Superior Efficiency Fast Switching and Logic Level Control for Compact Designs andnbsp; Featuresandnbsp; AEC-Q101 qualified (Please see the orderable part number list) 175℃ MOSFET 4.5 V drive Low drain-source on-resistance : RDS(ON) = 65 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 51 mΩ (typ.) (@VGS = 10 V) andnbsp; Applications andbull; Power |
TOP Electronic Industry Co., Ltd.
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Brand Name:Diodes Incorporated Model Number:AP62200TWU-7 Place of Origin:USA ...18V. The device fully integrates a 90mΩ high-side power MOSFET and a 65mΩ lowside power MOSFET to provide high-efficiency step-down DC-DC conversion. The AP62200/AP62201/AP62200T device is easily used by minimizing the external component count due to |
Shenzhen Xinyuanpeng Technology Co., Ltd.
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Brand Name:original Model Number:L2N7002LT1G ...MOSFET Field Effect Transistor SOT-23 L2N7002LT1G Products Description: 1. PD Power Dissipation| 300mW/0.3W Description & Applications| SEMICONDUCTOR TECHNICAL DATA ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS We declare that the material of product are Halogen Free and compliance with RoHS requirements 2. Description & Applications | Semiconductor Technical Data Ultra High... |
Shenzhen Res Electronics Limited
Guangdong |
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Brand Name:Diodes Incorporated Model Number:ZXMN10A07FTA Place of Origin:China ... to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. PRODUCT PROPERTIES Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) |
STJK(HK) ELECTRONICS CO.,LIMITED
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Categories:Electronics Passive Components Country/Region:china Good quality Electronic Component provider from China——GS Electronics, Product Model: BSS138-7-F Introduction: The BSS138-7-F is a small-signal N-channel MOSFET transistor known for its exceptional performance and versatility. This high-quality ... |
Shenzhen GS Electronic Technology Co., Ltd. CN
Guangdong |
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Categories:Onsemi Ic Country/Region:china Here is the English description of the FAN53730UCX chip: Breakdown Voltage: 30V On-Resistance: N/A (typ) Continuous Drain Current: 3A Fast Switching Speeds SOT-323 (SC-70) Package The FAN53730UCX is an N-channel power MOSFET from Infineon Technologies. Key... |
ZhongHao Industry Limited
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