high power rf mosfet transistor

Model Number:DTP11N70SJ

Place of Origin:china

Specifications 1 competitive price 2 warranty of each part 3 fast delicery 4 new and original

Brand Name:Semelab

Model Number:D1028UK

Place of Origin:UK

... A Vds - Drain-Source Breakdown Voltage: 70 V Operating Frequency: 175 MHz Gain: 13 dB Output Power: 300 W Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: DR Brand: Semelab / TT ...

Brand Name:ST

Model Number:PD57018-E

... voltage: 65 V Rds On-Drain Source On Resistance: 760 mOhms Operating frequency: 1 GHz Gain: 16.5 dB Output power: 18 W Minimum operating temperature: - 65 C Maximum operating temperature: + 150 C

Brand Name:Freescale

Model Number:MRFE6VP5600HR5

Place of Origin:USA

MRFE6VP5600HR5 RF Mosfet LDMOS (Dual) 50V 100mA 230MHz 25dB 600W NI-1230 These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile ...

Brand Name:onsemi

Model Number:NTK3134NT5G

Place of Origin:original

...MOSFET Power Electronics SOT-723 High Power N-Channel Transistor Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @ 25°C 750mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 350mOhm @ 890mA, 4.5V Vgs(th) (Max) @ Id 1.2V @ 250µA Vgs (Max) ±6V Input Capacitance (Ciss) (Max) @ Vds 120 pF @ 16 V FET Feature - Power...

Place of Origin:MALAYSIA

Brand Name:MOTOROLA

Model Number:PTFA18100

... Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are widely used in micro-cellular amplifier, CATV radio and television transmitters, GSM / CDMA / ...

Brand Name:VISHAY

Model Number:S525T-GS08

Place of Origin:USA

VISHAY IC S525T-GS08 Surface Mount SOT-223 S525T Product Paramenters Manufacturer: Vishay Product Category: RF MOSFET Transistors Transistor Polarity: N-Channel Technology: Si Id - Continuous Drain Current: 30 mA Vds - Drain-Source Breakdown Voltage: ...

Brand Name:DALEE

Model Number:DL50011204

Place of Origin:Guangdong,China(Mainland)

...tested and quality controlled prior to shipment Product Details: Product name: DALEE RF Connector Secification: Three generation Type : Female Certification: ISO9001,UL,ROHS and the latest REACH Voltage Rating: 60 VAC ...

Brand Name:Original Factory

Model Number:NVH4L160N120SC1

Place of Origin:CN

N-Channel NVH4L160N120SC1 SiC Power Single MOSFET Transistors TO-247-4 1200V​ Product Description Of NVH4L160N120SC1 NVH4L160N120SC1 is 1200V, 224mOhm, 17.3A SiC Power Single N-Channel MOSFET Transistors, package is TO247-4L. Specification Of ...

Brand Name:LENOLINK

Model Number:100W RF LOAD with 4.3-10 connector

Place of Origin:CHINA

...high power RF Load waterproof IP67 with PIM 150dBc 4.3-10 female connector used in 2G,3G,4G 1. 200w high power RF load , the PIM is 150-160dBc .With very good performance . 2. The VSWR is <1.2 3. Intermodulation is 150-160dBc@2X43dBm 4. IP 67 , outsider , good waterproof. 5. Frequency :0-3000G New features 1. Integrates 2 ~8 Wireless Bands 2. More than 50~100 dB Input Isolation 3. High Average Power...

Place of Origin:China

Brand Name:ONSEMI

Model Number:FDI030N06

High Power MOSFET FDI030N06 N-Channel PowerTrench^® MOSFET 60V, 193A, 3.2mΩ High Power MOSFET FDI030N06 N-Channel PowerTrench® MOSFET 60V, 193A, 3.2mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing...

Brand Name:BOCHEN

Model Number:RIG22

Place of Origin:Chengdu

Rf Resistor 50 ohm 100w Ceramic High Power Rf Flange 50 ohm Resistor Description The RIG22 is a high-performance power resistor engineered for applications requiring precision, durability, and superior heat resistance. Manufactured by BOCHEN, the RIG22 features a robust ceramic core structure with flame-retardant coating, ensuring excellent thermal conductivity and mechanical stability under continuous load. With a power...

Model Number:RIG Resistor

Brand Name:BONENS

Place of Origin:Sichuan, China

...High Power RF Resistor 1000W 800W 500W 250W 100W Flange Resistor Description: RIG high power resistance is also called RIG RF resistor, RF RF resistor, high frequency RF resistor, flange RF resistor, load RF resistor, RF resistor and high power microband resistors Product characteristics: 1.Small volume, large power capacity, good high-frequency characteristics, reliable performance, and convenient installation. 2.Suitable for power

Brand Name:SWT

Model Number:SW-PA-8002000-60C

Place of Origin:China

High performance 0.8 - 2 GHz L Band Power Amplifier Psat 57 dBm High Power RF Amplifier For Test and Measurement Description The 0.8-2 GHz Psat 57 dBm RF Power Amplifier Box is a high-performance amplifier designed for a wide range of RF applications, including communications, radar, and electronic warfare. This amplifier provides exceptional power...

Brand Name:Kimpok Technology / OEM

Model Number:KP-LAM800-50W

Place of Origin:China

500Mhz - 2400MHz High Power RF Power Amplifier Smaller Size LAN 28V DC ​Features: The integrated Noise source and RF PA in one house, smaller size and only connect DC28,6A to it Prevent the interference of high radiated RF power to monitoring-unit and PA...

Brand Name:Ding Shen

Model Number:DS-LAM800-50W

Place of Origin:China

500Mhz - 2400MHz High Power RF Power Amplifier Smaller Size LAN 28V DC ​Features: The integrated Noise source and RF PA in one house, smaller size and only connect DC28,6A to it Prevent the interference of high radiated RF power to monitoring-unit and PA...

Brand Name:VBE

Model Number:VBE36015E2

Place of Origin:CHINA

Brand Name:EST

Model Number:NR50W-B42

Place of Origin:CHINA

High Power RF Jamming Module - Working Frequency 20MHz~6GHz Current ≤6.0A Product Description: Our High Power RF Jamming Module is a powerful 50W Blocking Power Amplifier Module designed specifically for use in communication systems. It is capable of delivering an output power...

Brand Name:Ti

Model Number:FDS6681Z

... that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features • Extended VGSS range (–25V) for

Brand Name:XCE

Model Number:XCE BB50

Place of Origin:China

Double Sided High Frequency Pcb With RF Microwave For High Power RF Amplifier Quick Detail : Type Pcb Material Rogers Layer 2 Size 6*6cm Permittivity 2.2 Color Green Surface Finish Immersion Tin Parameter: Model Parameter thickness(mm) Permittivity(ER) F4B...