high voltage fet transistor

Brand Name:Suntech

Model Number:Cable

Place of Origin:Ningbo

.... Key Features Secure Cable Support: Firm cable holding and protection prevents cable movement and damage Robust Construction: High-strength steel material with

Brand Name:Hua Xuan Yang

Model Number:1503C1

Place of Origin:ShenZhen China

..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

Product Description: High Voltage MOSFET is a type of power mosfet, which is designed for high voltage applications. It is characterized by its embedded FRD high voltage MOSFET technology, ultra-high voltage MOSFET application, low leakage and variable ...

Brand Name:onsemi

Model Number:FDA50N50

Place of Origin:Original Factory

FDA50N50 High Voltage Mosfet 48A 500V DMOS AC−DC Power Supply Transistor Description UniFET MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and...

Brand Name:FAIRCHILD

Model Number:MJD340TF

Place of Origin:Original

... Lead (I-PAK, “- I” Suffix) NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 3 V

Brand Name:ON Semiconductor

Model Number:MMBT5551LT1G

Place of Origin:China

MMBT5551LT1G High Voltage NPN Transistor 160V VCEO, 300mA IC Low Saturation Voltage SOT-23 Package Halogen-Free Green Material Ideal for Amplification & Switching Circuits Features S and NSV Prefix for Automotive and Other Applications Requiring Unique ...

Brand Name:MITSUBISHI

Model Number:RD06HVF1

Place of Origin:Original

... High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets. RoHS COMPLIANT RD06HVF1-101 is a RoHS compliant products. RoHS ...

Brand Name:OTOMO

Model Number:1503C1

Place of Origin:ShenZhen China

..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the

Place of Origin:MALAYSIA

Brand Name:FSL

Model Number:FLL421

FLL421 is a High Voltage - High Power GaAs FET. Part NO: FLL421 Brand: FSL Date Code: 97+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are widely ...

Brand Name:original

Model Number:SIHB22N60E-E3

Place of Origin:Original Manufacturer

HIGH VOLTAGE SINGLE MOSFET POWER TRANSISTOR SIHB22N60E - E3 600V 21A PACKAGE D2PAK FET Type: N-channel Operating Temperature: -55°C ~ 150°C (TJ) Package: TO263-3 D2PAK High Light: n channel mosfet transistor , n channel transistor High Voltage Single Mosfet Power Transistor...

Brand Name:Original Factory

Model Number:IPP65R050CFD7A

Place of Origin:CN

...220-3, Through Hole. Specification Of IPP65R050CFD7A Part Number IPP65R050CFD7A FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650 V Current - Continuous Drain (Id) @ 25°C 45A (Tc) Drive Voltage (Max Rds On, Min Rds On)

Brand Name:VISHAY

Model Number:SIHB22N60E-E3

Place of Origin:CHINA

... Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 21A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 180 mOhm @ 11A, 10V Vgs(th)

Brand Name:onsemi

Model Number:FDD86381-F085

Place of Origin:original

... Electronics TO-252-3 Switching Transistor High Current High Voltage Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80 V Current - Continuous Drain (Id) @ 25°C 25A (Tc) Drive Voltage (Max Rds On, Min Rds...

Brand Name:InterFET

Model Number:J201

Place of Origin:USA

...Transistor General Purpose high power rf transistors Manufacturer: Fairchild Product Category: JFET RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case: TO-92 Transistor Polarity: N-Channel Configuration: Single Vgs - Gate-Source Breakdown Voltage: - 40 V Gate-Source Cutoff Voltage...

Brand Name:KEC

Model Number:KIA7815API-U/PF

Place of Origin:Korean

KIA7815API-U/PF Linear Voltage Regulators Transistor TO-220F(TO-220IS) RoHS KEC Original P/N Output Voltage Input Voltage Package KIA7805AF/API 5 35-40V AF:DPAK API:TO220 KIA7806AF/API 6 KIA7807AF/API 7 KIA7808AF/API 8 KIA7809AF/API 9 KIA7810AF/API 10 ...

Brand Name:Original brand

Model Number:NVHL040N65S3F

Place of Origin:Original

Mosfet Power Transistor NVHL040N65S3F M Superfet3 650V TO247 PKG N-Channel Description SUPERFET III MOSFET is new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate ...

Place of Origin:US

Brand Name:Original

Model Number:AOD478

... Cut Tape (CT) Part Status Discontinued at Digi-Key FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 2.5A (Ta), 11A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On ...

Brand Name:Original

Model Number:MMBT5551

...High Voltage Transistor NPN Silicon SOT-23 - Power Transistor and Darlingtons Part number BC807-T CMBTA56-T CMBT4403-T CMBTA06 CMBT3906-T CMBT3906 CMBTA56 CMBTA42-T CMBT4401-T CMBTA42 CMBT3904 CMBT4403 CMBTA92 CMBT5551 CMBT5401 CMBT5551-T CMBT3904-T CMBTA92-T CMBTA06-T CMBT5401-T CMBT4401 CMBT9014 MMBT5551 Electrical Characteristics Mfr. # MMBT5551 Mounting Style SMD/SMT Transistor

Brand Name:HEYI

Model Number:256V

Place of Origin:CHINA

...High Voltage Battery Pack Stackable Lithium Battery This high-voltage 250V 25kWh lithium energy system offers a compact, stackable design and robust power output. Built with safe LiFePO₄ technology and a built-in inverter, it supports both grid-tied and off-grid setups, making it a smart solution for solar storage, energy backup, or hybrid systems. All-in-One Stackable Battery Solution Designed for homes, this system merges high-voltage

Brand Name:Toshiba

Model Number:MG200Q1US51

Place of Origin:Japan

...Transistor Module MG200Q1US51 Product Description Manufactured by: Toshiba America, Inc. Part number: MG200Q1US51 Part Category: Transistors Description: 300A, 1200V, N-CHANNEL IGBT Collector-Emitter Voltage: 1200V Gate-Emitter Voltage: 20V Collector Current (DC): 300A Forward Current: (DC): 200A Collector Power Dissipation: 1500W Junction Temperature: 150C Isolation Voltage...