high voltage rf transistor

Brand Name:InterFET

Model Number:J201

Place of Origin:USA

...Transistor General Purpose high power rf transistors Manufacturer: Fairchild Product Category: JFET RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case: TO-92 Transistor Polarity: N-Channel Configuration: Single Vgs - Gate-Source Breakdown Voltage: - 40 V Gate-Source Cutoff Voltage...

Brand Name:WPVAC

Model Number:JPK43A234

Place of Origin:CHINA

...High Voltage RF Relay Switch For Antenna Coupler Application A high voltage RF relay switch is an electronic device specifically designed to control the flow of high voltage signals in RF (Radio Frequency) applications. It is commonly used in various industries, including telecommunications, broadcasting, aerospace, and scientific research. High voltage RF relay switches are designed to handle high voltage...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

...High Voltage MOSFET is an Ultra-hv MOSFET, a kind of High Voltage Mosfet Transistor, that offers outstanding performance in terms of heat dissipation and low on-resistance. It is equipped with advanced features such as new Lateral Variable Doping Technology, Special Power MOS Structure and excellent characteristics in high-temperature, allowing for superior performance over the conventional High Voltage MOSFET. The High

Brand Name:Analog Devices Inc.

Model Number:AD9361BBCZ

Place of Origin:Multi-origin

...RF Power Transistor - High Power High Reliability The AD9361BBCZ is a high-power, high-efficiency N-channel RF power transistor designed for use in the 900 MHz ISM band. The device features a wide gate voltage range and excellent thermal stability. It is ideal for applications such as RF power amplifiers, cellular base stations and other wireless communication applications. Features: • High power capability: Pout = 10 W • High

Brand Name:SWT

Model Number:SW-PA-600011000-50C

Place of Origin:China

...High Power Amplifier Psat 49.5 dBm High Voltage RF Power Amplifier for microwave links Description This high-voltage RF power amplifier operates in the frequency range of 6 to 11 GHz and features a Psat (saturated output power) of 49.5 dBm. It is designed to deliver high...

Brand Name:Hua Xuan Yang

Model Number:AP7H03DF

Place of Origin:ShenZhen China

... charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approved. High Voltage Mosfet Transistor Features VDS =

Brand Name:Lingxun

Place of Origin:China

Multipurpose Low ON Resistance Voltage MOSFET Transistors For Adaptor *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-...

Brand Name:XIWUER

Model Number:CT81-2B4-15KV-400pF

Place of Origin:XIAN, CHINA

RF Power Capacitors Class1 10-15kV Feed-Through Mounting Features Low loss Class 1 ceramic dielectric materials with noble metal electrodes resulting in low self heating High Voltage / High Reactive Power Ratings Low Inductance construction permitting higher frequency use Low magnetic susceptibility Application • HF Filter, By-Pass & Coupling Circuits • High Power Matching Tuned Circuits • Antenna Circuits • Industrial Applications • High...

Brand Name:onsemi

Model Number:FDA50N50

Place of Origin:Original Factory

FDA50N50 High Voltage Mosfet 48A 500V DMOS AC−DC Power Supply Transistor Description UniFET MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and...

Brand Name:FAIRCHILD

Model Number:MJD340TF

Place of Origin:Original

... Lead (I-PAK, “- I” Suffix) NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 3 V

Brand Name:ON Semiconductor

Model Number:MMBT5551LT1G

Place of Origin:China

MMBT5551LT1G High Voltage NPN Transistor 160V VCEO, 300mA IC Low Saturation Voltage SOT-23 Package Halogen-Free Green Material Ideal for Amplification & Switching Circuits Features S and NSV Prefix for Automotive and Other Applications Requiring Unique ...

Brand Name:Fuji Electric

Model Number:FLM0910-25F

Place of Origin:JP

FLM0910-25F RF Power Transistor X-Band Internally Matched FET DESCRIPTION The FLM0910-25F is a power GaAs FET that is internally matchedfor standard communication bands to ...

Brand Name:VBE

Model Number:VBE36015E2

Place of Origin:CHINA

Brand Name:CHILONG

Model Number:CL-5028

Place of Origin:CHINA

R8 Super Anti Shock with Alarm for Slot Machines and Crane machines Anti High Voltage and Anti RF .

Brand Name:MXT

Model Number:PA869T894M_45-28V

Place of Origin:SHENZHEN,CHINA

...radio frequency power amplifier applications. It is designed to provide a high power output and excellent power added efficiency (PAE) from 20% to 50%. This power amplifier delivers a reliable output power of ...

Place of Origin:MALAYSIA

Brand Name:FSL

Model Number:FLL421

FLL421 is a High Voltage - High Power GaAs FET. Part NO: FLL421 Brand: FSL Date Code: 97+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are widely ...

Brand Name:MITSUBISHI

Model Number:RD06HVF1

Place of Origin:Original

... High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets. RoHS COMPLIANT RD06HVF1-101 is a RoHS compliant products. RoHS ...

Brand Name:OTOMO

Model Number:1503C1

Place of Origin:ShenZhen China

Original High Voltage Mosfet Transistor , Mosfet Driver Using Transistor High Voltage Mosfet Transistor Working and Characteristics The construction of the power MOSFET is in V-configurations, as we can see in the following figure. Thus the device is also...

Categories:Electronic Semiconductors

Country/Region:china

... low noise figure, high gain, and high-speed performance in compact packages. Key Features: Type: NPN RF Transistor Transition Frequency (ft): 25 GHz Noise Figure (NF): 0.75 dB at 2 GHz Gain (Gmax): 21 dB at 1.8 GHz Collector-Emitter Voltage (Vce):

Brand Name:original

Model Number:SIHB22N60E-E3

Place of Origin:Original Manufacturer

HIGH VOLTAGE SINGLE MOSFET POWER TRANSISTOR SIHB22N60E - E3 600V 21A PACKAGE D2PAK FET Type: N-channel Operating Temperature: -55°C ~ 150°C (TJ) Package: TO263-3 D2PAK High Light: n channel mosfet transistor , n channel transistor High Voltage Single Mosfet Power Transistor...