hiper fasttm igbt diode

Brand Name:IXYS

Model Number:IXGH40N60C2D1

Place of Origin:USA

IXGH40N60C2D1 # 75A 600V 300W DIP TO-247 HiPer FASTTM IGBTs w/ Diode Mosfet IGBT C2-Class High Speed IGBTs Features Very High Frequency IGBT Square RBSOA High Current Handling Capability Applications Uninterruptible Power Supplies (UPS) Switch-Mode and ...

Brand Name:IXYS

Model Number:IXGH40N60C2D1

Place of Origin:USA

IXGH40N60C2D1 # 75A 600V 300W DIP TO-247 HiPer FASTTM IGBTs w/ Diode Mosfet IGBT C2-Class High Speed IGBTs Features Very High Frequency IGBT Square RBSOA High Current Handling Capability Applications Uninterruptible Power Supplies (UPS) Switch-Mode and ...

Brand Name:Original

Model Number:MTB15P04J3

Place of Origin:Original

...IGBT/Diode Switching/Transistor IC Chips Small MOQ , Wholesale price , Fast delivery . Product details Type IGBT transistor Conditional New and original MOQ 10pieces SPQ 50 pieces PAYMENT T/T , PAYPAL ,WESTERN UNION,ALIPAY Shipment DHL . FEDEX , UPS , EMS , POST Product Keywords MTB15P04J3 all kinds of IGBT...

Brand Name:ADV

Model Number:ADV -CP-01

Place of Origin:Changzhou China

IGBT/Diode Vacuum Brazed Aluminum Liquid Cold Plate Description Our cold plates are widely used in in applications as diverse as high-powered ...

Brand Name:Hua Xuan Yang

Model Number:AP4434AGYT-HF

Place of Origin:Shenzhen, China

AP4434AGYT-HF PMPAK(YT Original MOSFET/IGBT/Diode Switching/Transistor IC Chips Description AP4434A series are from Advanced Power innovated design and silicon process technology to achieve the ...

Brand Name:Infineon Technologies

Model Number:IKW75N60T

Place of Origin:China

...IGBT Transistors IGBT Transistors LOW LOSS DuoPack 600V 75A,600 V IGBT with anti-parallel diode in TO-247 The 600 V, 75 A hard-switching TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO-247 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode

Place of Origin:CN

Brand Name:Original Factory

Model Number:DD800S45KL3B5

DD800S45KL3B5 Automotive IGBT Modules Diodes IGBT EC3 Module 800A Schottky Diodes Module [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + ...

Brand Name:Infineon

Model Number:IKW15N120T2

Place of Origin:Original Factory

...15 A TRENCHSTOP™ IGBT co-packed with free-wheeling diode in a TO-247 package provides significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with

Brand Name:STMicroelectronics

Model Number:STGWA19NC60HD GWA19NC60HD

Place of Origin:CHINA

STGWA19NC60HD GWA19NC60HD ultrafast IGBT 31 A 600 V very fast IGBT with Ultrafast diode Transistors - IGBTs - Single 31 A, 600 V, very fast IGBT with Ultrafast diode Product details Description : This device is an ultrafast IGBT. It utilizes the advanced ...

Place of Origin:Japan

Brand Name:FUJITSU

Model Number:6R1MBI125P-160-54

... Overview We specialize in high power and power conversion modules of famous brands Categories include: Darlington Schottky, rectifier intelligent, IGBT, IPM, GTR, DC-DC, AC-DC rectifier and power supply and other modules. Applications: power conditioning,

Brand Name:Infineon

Model Number:FF1500R12IE5

Place of Origin:China

IGBT-Module • Inverter diode FF300R12KT4P Fieldstop IGBT4 and Emitter Controlled HE diode TypicalApplications • High powerconverters • Motor drives • UPS systems • Wind turbines Electrical Features • Extended operating temperature Tvj op • ...

Brand Name:ON/Fairchild

Model Number:G40N60UFD

Place of Origin:Original Factory

G40N60UFD Ultra fast IGBT Transistor N-Channel with Built in Diode 600V 40A 160W, TO-3P Descriptions: Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for ...

Brand Name:IXYS

Model Number:IXBT14N300HV

... of MOSFETs and IGBTs. These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both its saturation voltage and the forward voltage drop of its intrinsic diode. The "Free" intrinsic body diodes of

Brand Name:Mitsubishi

Model Number:MDD44-16N1B

Place of Origin:Japan

...Diode Module MDD44-16N1B High Power IGBT Module Electronic components Discrete Semiconductor Modules Phase leg Features / Advantages Package with DCB ceramic Improved temperature and power cycling Planar passivated chips Very low forward voltage drop Very low leakage current Applications Diode...

Brand Name:Infineon Technologies

Model Number:IRGP4068DPBF

Place of Origin:original

...IGBT Power Module with Low VCE(sat) and Low EMI Product: IRGP4068DPBF IGBT Power Module Features: - 600V/68A N-channel IGBT Power Module - Low saturation voltage - High speed switching - High power density - Low switching losses - Built-in fast recovery anti-parallel diode...

Place of Origin:beijing, China

Brand Name:power-sem

Model Number:PSHI 512F17B

1.Feature ● ASIC single IGBT driver ● Suitable for all 1700V HM-IGBTs ● Short circuit and over current protection by VCEsatmonitoring ● Supply VGEunder voltage protection(>-7.5V,<+12.5V) ● Error “soft turn-off” ● Dynamic “soft turn-off”+active clamping ● ...

Brand Name:STMicroelectronics

Model Number:STGWA19NC60HD GWA19NC60HD

...STGWA19NC60HD GWA19NC60HD ultrafast IGBT 31 A 600 V very fast IGBT with Ultrafast diode Transistors - IGBTs - Single 31 A, 600 V, very fast IGBT with Ultrafast diode Product details Description : This device is an ultrafast IGBT. It utilizes the advanced ...

Brand Name:Fuji Electric

Model Number:2MBI75N-060

Place of Origin:JP

2MBI75N-060 IGBT POWER DIODE MODULE 600V 75A IGBT MODULE ( N series ) n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized ...

Brand Name:ON

Model Number:NGD8201NG

Place of Origin:TAIWAN

NGD8201NG Rectifier Diode Integrated circuit Chip USB Flash Microcontrollers NGD8201NG Ignition IGBT 20 A, 400 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped...