ic dram 1gbit parallel 84twbga

Brand Name:ISSI, Integrated Silicon Solution Inc

Model Number:IS43DR16640C-25DBL

Product Details FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 933 MHz • 8 internal banks for ...

Brand Name:Original Factory

Model Number:S29GL01GS10FHI010

Place of Origin:CN

S29GL01GS10FHI010 Memory IC Chip 1Gbit Parallel MIRRORBIT™ Eclipse NOR Flash Memory IC​ Product Description Of S29GL01GS10FHI010 S29GL01GS10FHI010 is MIRRORBIT™ Eclipse flash products fabricated on 65-nm process technology. It offer a fast page access time...

Categories:Integrated Circuit IC Chip

Country/Region:china

MT40A1G16KD-062E:E Products Description: • VDD = VDDQ = 1.2V ±60mV • VPP = 2.5V, –125mV, +250mV • On-die, internal, adjustable VREFDQ generation • 1.2V pseudo open-drain I/O • TC maximum up to 95°C – 64ms, 8192-cycle refresh up to 85°C – 32ms, 8192-cycle ...

Brand Name:Micron Technology Inc.

Model Number:W971GG8JB-25

SDRAM - DDR2 Memory IC 1Gbit Parallel 200 MHz 400 Ps 60-WBGA (8x12.5) W971GG8JB-25 Memory Devices Ic PRODUCT DESCRIPTION Part number W971GG8JB-25 is manufactured by Micron Technology Inc and distributed by Stjk. As one of the leading distributors of ...

Brand Name:KIOXIA

Model Number:TC58BVG0S3HTA00

Place of Origin:America

TC58BVG0S3HTA00 FLASH - NAND (SLC) Memory IC 1Gbit Parallel 25 Ns 48-TSOP Description: The TC58BVG0S3HTA00 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and ...

Brand Name:MICRON

Model Number:MT41K512M16HA-125IT:A

... 512M x 16 Memory Interface Parallel Clock Frequency 800 MHz Write Cycle Time - Word, Page - Access Time 13.5 ns Voltage - Supply 1....

Model Number:MT41K256M16TW-107:P

Brand Name:Micron

...ICs) Memory Memory Memory Interface Parallel Mfr Micron Technology Inc. Clock Frequency 933 MHz Packaging Tray Access Time 20 ns Part Status Active Voltage - Supply 1.283V ~ 1.45V Operating Temperature 0°C ~ 95°C (TC) Memory Type Volatile Mounting Type Surface Mount Memory Format DRAM...

Brand Name:Winbond Electronics

Model Number:W632GG6KB-15

Place of Origin:original

W632GG6KB-15 High Performance Flash Memory Chips Fast and Reliable Data Storage Memory Type Volatile Memory Format DRAM Technology SDRAM - DDR3 Memory Size 2Gbit Memory Organization 128M x 16 Memory Interface Parallel Clock Frequency 667 MHz Write Cycle ...

Brand Name:Micron Technology

Model Number:MT41K64M16TW-107 IT:J

Place of Origin:Original

MT41K64M16TW-107 IT:J Memory IC DRAM DDR3 933 MHz 1Gbit 63mA 64Mx16 FBGA-96 Specifications Product Attribute Attribute Value Mounting Style: SMD/SMT Data Bus Width: 16 bit Organization: 64 M x 16 Memory Size: 1 Gbit Maximum Clock Frequency: 933 MHz Supply ...

Brand Name:ISSI

Model Number:IS42S16400J-7TLI

Place of Origin:Original Factory

... 54-TSOP ISSI Original SDRAM Memory IC 64Mb (4M x 16) Parallel 143MHz Description ISSI's 64Mb Synchronous DRAM is organized as1,048,576 bits x 16-bit x 4-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline...

Brand Name:Alliance Memory

Model Number:AS6C62256-55SIN, AS6C62256-55SINTR CY62256NLL-55SNXI, CY62256NLL-55SNXIT, CY62256NLL-70PXC, CY62256NLL-70SNXC, and CY62256NLL-70SNXCT

Place of Origin:Thailand

...DRAM, SDRAM, Flash and ICs Drop-In Replacements for CY62256 Low-Power SRAMs Alliance Memory’s readily available drop-in replacements for CY62256 low-power SRAMs More part number: Part Number Description AS6C62256-55SIN IC SRAM 256KBIT PARALLEL 28SOP AS6C62256-55SCN IC SRAM 256KBIT PARALLEL

Brand Name:Integrated Silicon Solution Inc

Model Number:IS42S16400J-7TLI

Place of Origin:CHINA

...SDRAM Memory IC 64Mb (4M x 16) Parallel 143MHz 5.4ns 54-TSOP II Memory Type Volatile Memory Format DRAM Technology SDRAM Memory Size 64Mb (4M x 16) Clock Frequency 143MHz Write Cycle Time - Word, Page - Access Time 5.4ns Memory Interface Parallel List Of ...

Brand Name:original

Model Number:MT53D512M32D2DS-053 AIT:D

...-053 AIT:D Products Description: 1. Sdram-mobile LPDDR4 Memory IC 16Gb (512M x 32) -1.866ghz 200-WFBGA (10x14.5) 2. SDRAM, 512M x 32bit, 2048Byte, 535ps, parallel interface, wfbga-200 3 . IC DRAM 16GBIT 1866MHZ 200WFBGA 4. SDRAM 512 Meg x 32 200B 5. LPDDR4...

Brand Name:ISSI

Model Number:IS42S16400J-7TLI

Place of Origin:Original Factory

... 54-TSOP ISSI Original SDRAM Memory IC 64Mb (4M x 16) Parallel 143MHz Description ISSI's 64Mb Synchronous DRAM is organized as1,048,576 bits x 16-bit x 4-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline...

Brand Name:MICRON

Model Number:MT41K256M16TW-107 IT:P

Place of Origin:Malaysia

Mt41k256m16tw-107 It P 96-FBGA Electronic Component Integrated Circuit Memory 1.283V ~ 1.45V DRAM The MT41K256M16TW-107 IT:P is SDRAM - DDR3L Memory IC 4Gb (256M x 16) Parallel 933 MHz 20 ns 96-FBGA (8x14). MT41K256M16TW-107 IT:P manufactured by Micron is ...

Place of Origin:Original

W29N01GWDIBA Memory IC Chip W29N01GWDIBA Specifications Part Status Obsolete Memory Format FLASH Memory Type Non-Volatile Memory Size 1Gb (64M x 16) Speed 35ns Interface Parallel Voltage - Supply 1.7 V ~ 1.95 V Operating Temperature -40°C ~ 85°C (TA) ...

Categories:Integrated Circuits ICs

Country/Region:china

The K4B1G1646G-BCH9 belongs to Samsung's DRAM (Dynamic Random Access Memory) chip family, specifically a DDR3 SDRAM (Double Data Rate Synchronous Dynamic Random Access Memory) type. This chip features a storage capacity of 1Gbit, organized in a 64Mx16 ...

Categories:Memory IC Chip

Country/Region:china

SDRAM - DDR2 Memory IC 1Gbit Parallel 333 MHz 450 ps 84-TWBGA (8x12.5)

Categories:IC Integrated Circuits

Country/Region:china

The CY7C1061AV33-10ZXI,from Cypress Semiconductor,is DRAM.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the ...