igbt anti parallel hyperfast diode

Brand Name:FSC

Model Number:HGTG11N120CND

Place of Origin:USA

...IGBT Anti-Parallel Hyperfast Diode 43A 1200V Description : The HGTG11N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT...

Brand Name:FSC

Model Number:HGTG11N120CND

Place of Origin:USA

...IGBT Anti-Parallel Hyperfast Diode 43A 1200V Description : The HGTG11N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT...

Brand Name:Infineon Technologies

Model Number:IKW75N60T

Place of Origin:China

...IGBT Transistors IGBT Transistors LOW LOSS DuoPack 600V 75A,600 V IGBT with anti-parallel diode in TO-247 The 600 V, 75 A hard-switching TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO-247 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode

Brand Name:Original Factory

Model Number:IKY75N120CH7XKSA1

Place of Origin:CN

Integrated Circuit Chip IKY75N120CH7XKSA1 IGBT With Anti-Parallel Diode TO-247-4​ Product Description Of IKY75N120CH7XKSA1 IKY75N120CH7XKSA1 is 1200 V, 75 A IGBT with anti-parallel diode in TO247PLUS 4pin package, Technology with the highest power density...

Brand Name:Infineon

Model Number:IKW15N120T2

Place of Origin:Original Factory

...15 A TRENCHSTOP™ IGBT co-packed with free-wheeling diode in a TO-247 package provides significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with

Brand Name:STMicroelectronics

Model Number:STGWA19NC60HD GWA19NC60HD

Place of Origin:CHINA

...IGBT 31 A 600 V very fast IGBT with Ultrafast diode Transistors - IGBTs - Single 31 A, 600 V, very fast IGBT with Ultrafast diode Product details Description : This device is an ultrafast IGBT. It utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features Low on-voltage drop (VCE(sat)) Very soft Ultrafast recovery anti-parallel

Brand Name:WeEn Semiconductors

Model Number:WG50N65DHWQ

...IGBT Trench Field Stop 650 V 91 A 278 W Through Hole TO-247-3 WeEn Semiconductors WG50N65DHWQ IGBT WeEn Semiconductors WG50N65DHWQ IGBT is a high-speed 650V/50A IGBT with an anti-parallel diode in a TO247 package. This IGBT offers high-speed with low switching losses and features smooth switching behavior that avoids voltage overshoot and reduces system EMI. The WG50N65DHWQ IGBT...

Brand Name:Infineon Technologies

Model Number:IRGP4068DPBF

Place of Origin:original

...IGBT Power Module with Low VCE(sat) and Low EMI Product: IRGP4068DPBF IGBT Power Module Features: - 600V/68A N-channel IGBT Power Module - Low saturation voltage - High speed switching - High power density - Low switching losses - Built-in fast recovery anti-parallel diode...

Brand Name:Krunter

Model Number:KHG75H12E4L

Place of Origin:China

...IGBT Module for High Voltage and High Frequency Power Distribution in Industries KHG75H12E4L NPT IGBT technology 10μs short circuit capability Low switching losse VCE(sat) with positive temperature coefficient Square RBSOA Low inductance case Fast & soft reverse recovery anti-parallel...

Brand Name:Enerkey

Model Number:EK-iD40V/80V/100V300A

Place of Origin:Shenzhen, China

... Board Size: Approx. 140 x 95mm/5.5 x 3.74inch Copper Foil Thickness: 3.0oz Purpose: Replace ordinary high-current diodes, ideal for parallel connection of solar panels, suitable for

Brand Name:Hongchuang

Place of Origin:Jiangsu, China

... cabinet is composed of 14 rectifier unit modules. Each unit module is mainly composed of circuit breakers, three-phase rectifier bridges, IGBTs, high-frequency transformers, diodes, etc. Input circuit breaker for overload or

Brand Name:Xinland

Model Number:Laser Diode

Place of Origin:China

... Application Medical Usage Power 20w Color Red Features: Multiple single emitters fiber coupling High brightness Parallel seam sealing Anti-condensation design Advantages: Compact size Light weighted (~45g) Product Technical Data:

Place of Origin:CN

Brand Name:TYANSHINE

Model Number:TX-5266W250FC120-NUVENG-A01

... 40lm/W @Tj=85℃ with full power 5, Excellent effect of color-mixing for 3Colors or 4Colors LEDs light source; 6, Quick on/off; Anti-poisonous or toxic, comply with RoHS Specifications:

Brand Name:Anterwell

Model Number:GP4068D

Place of Origin:original factory

...DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • Low VCE (ON) Trench IGBT Technology • Low Switching Losses • Maximum Junction temperature 175 °C • 5 µS short circuit SOA • Square RBSOA • 100% of the parts tested for 4X rated current (ILM) • Positive VCE (ON) Temperature co-efficient • Ultra-low VF Hyperfast Diode...

Brand Name:Winbond Electronics

Model Number:W25N01GVZEIG TR

...Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1 for

Place of Origin:China

Brand Name:power-sem

Model Number:PSHI 0412 C

● ASIC single IGBT driver ● Suitable for all IGBTs up to 1200V/1700V ● Anti-logical control (IGBT turn on when input low level ) ● Short circuit and over current protection by VCEsat monitoring ● Isolation due to nanometer amorphous transformer ● Supply ...

Categories:RF Diodes

Country/Region:china

RF Diode Schottky - Anti-Parallel 7V

Categories:RF Diodes

Country/Region:china

RF Diode Schottky - Anti-Parallel 5V (Min) 50 mA 75 mW GB210

Categories:Power Semiconductor Devices

Country/Region:china

RF Diode Schottky - Anti-Parallel 7V