igbt power transistor 600v 60a

Brand Name:onsemi

Model Number:FGH20N60SFDTU

Place of Origin:Original

FGH20N60SFD IGBT Power Transistors 600V 20A Field Stop 165W Through Hole Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other ...

Brand Name:Fairchild/ON

Model Number:FGH60N60SMD

Place of Origin:CN

... voltage: VCE(sat) =1.9V(Typ.) @ IC = 60A • High input impedance • Fast switching • Tighten Parameter Distribution • RoHS compliant Applications • Solar Inverter, UPS, SMPS, PFC • Induction Heating Using Novel Field Stop IGBT Technology,

Place of Origin:Original

... Current - Collector Pulsed (Icm) 240A Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 60A Power - Max 375W Switching Energy 750µJ (on), 550µJ (off) Input Type Standard Gate Charge 334nC Td (on/off) @ 25°C 60ns/208ns Test Condition 400V, 60A, 4.7 Ohm,

Place of Origin:US

Brand Name:Original

Model Number:IRG4PC40UDPBF

Product Description Product Detail Packaging Bulk Part Status Last Time Buy Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 40A Current - Collector Pulsed (Icm) 160A Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 20A Power - Max 160W ...

Brand Name:IXYS

Model Number:IXYK110N120A4

IXYK110N120A4 IGBT PT 1200 V 375 A 1360 W Through Hole TO-264 (IXYK) IXYS Trench 650V to 1200V XPT™ GenX4™ IGBTs IXYS Trench 650V to 1200V XPT™ GenX4™ IGBTs are developed using a proprietary XPT thin-wafer technology and a state-of-the-art 4th generation (...

Brand Name:NCE

Model Number:NCE20TD60BT

Place of Origin:CHINA

Brand Name:Anterwell

Model Number:FGH60N60SFD

Place of Origin:original factory

... • Induction Heating, UPS, SMPS, PFC General Description Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and

Place of Origin:CN

Brand Name:Original Factory

Model Number:FS30R06W1E3

Automotive IGBT Modules FS30R06W1E3 Medium Power 600V 60A 150W IGBT Module Chassis Mount [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery ...

Model Number:FGH60N60SFD

Place of Origin:original factory

... • Induction Heating, UPS, SMPS, PFC General Description Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and

Brand Name:Infineon Technologies

Model Number:IRGP4068DPBF

Place of Origin:original

...600V 6.5A IGBT Power Module with Low VCE(sat) and Low EMI Product: IRGP4068DPBF IGBT Power Module Features: - 600V/68A N-channel IGBT Power Module - Low saturation voltage - High speed switching - High power density - Low switching losses - Built-in fast recovery anti-parallel diode - Low thermal resistance - Extended temperature range Specifications: Operating Voltage: 600V Current Rating: 68A Collector Emitter Voltage: 600V

Brand Name:Hua Xuan Yang

Model Number:5N20DY TO-252

Place of Origin:ShenZhen China

...Power Transistor 2A 600V Circuit Switching For LED Drive Mosfet Power Transistor Description The AP50N20D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other Mosfet Power Transistor General Features V DS =200V,I D =5A R DS(ON) <520mΩ @ V GS =4.5V Mosfet Power Transistor...

Brand Name:original

Model Number:SIHB22N60E-E3

Place of Origin:Original Manufacturer

...POWER TRANSISTOR SIHB22N60E - E3 600V 21A PACKAGE D2PAK FET Type: N-channel Operating Temperature: -55°C ~ 150°C (TJ) Package: TO263-3 D2PAK High Light: n channel mosfet transistor , n channel transistor High Voltage Single Mosfet Power Transistor SIHB22N60E - E3 600V...

Place of Origin:Japan

Brand Name:FUJITSU

Model Number:2MBI50J-120

...IGBT(600V 50A) . Part NO: 2MBI50J-120 Brand: FUJITSU Mounting Type: Screws Date Code: 04+ Quality Warranty: 3 Months 　 　 Overview We specialize in high power and power conversion modules of famous brands Categories include: Darlington Schottky, rectifier intelligent, IGBT, IPM, GTR, DC-DC, AC-DC rectifier and power supply and other modules. Applications: power...

Brand Name:FUJI

Model Number:2MBI100N-060

Place of Origin:JAPAN

...IGBT Power Module 2-PACK IGBT 600V 100A IGBT MODULE ( N series ) n n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function ( ~3 Times Rated Current) n n Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls • Uninterruptible Power Supply Description 1. IGBT...

Brand Name:Mitsubishi Electric

Model Number:PSS30S71F6

Place of Origin:CHINA

...Power Modules 600V 30A TRANSFER MOLDING TYPE INSULATED TYPE MAIN FUNCTION AND RATINGS 3 phase DC/AC inverter 600V/30A (CSTBT) N-side IGBT open emitter Built-in bootstrap diodes with current limiting resistor APPLICATION AC 100~240Vrms(DC voltage:400V or below)class low power...

Brand Name:ON

Model Number:MMBT5551LT1G

Place of Origin:ON

... IGBT Power Module 600mA 160V BJT Bipolar Transistors MMBT5551LT1G SOT-23-3 Bipolar Transistors - BJT 600mA 160V NPN Manufacturer: onsemi Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor ...

Brand Name:Original brand

Model Number:IGT60R070D1ATMA1

Place of Origin:Original

... • Superior commutation ruggedness • Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22) Benefits • Improves system efficiency • Improves power density •

Place of Origin:Shenzhen, China

Brand Name:SCED

Model Number:TR60-01-BM0-N2

..., Military, Elevator, etc.. Pitch 19.00mm, 600V 60A, any pole available, High Current Terminal connectors ■Right angle wire inlet; □Vertical wire inlet; □45 degree ...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

... is designed to support applications with high frequency up to 60KHz, and offers a current density of 400A/c㎡. High Power IGBT is an ideal choice for use in a wide range of applications requiring high speed switching and high power. Technical Parameters: