indium gallium arsenic pin photodiode

Brand Name:HAMAMATSU

Model Number:G12180-010A

Place of Origin:Japan

Product Description: G12180-010A Indium Gallium Arsenic PIN Photodiode Features: peculiarity - Low noise, low dark current - Low junction capacitance - Receiving surface: φ1mm - Low noise ...

Brand Name:ZMSH

Model Number:InAs wafer

Place of Origin:China

...Indium Arsenide2inch 3inch 4inch Single Crystal Substrate N/P Type Semiconductor Wafer Thickness 300-800um Indium InAs or indium arsenide monolithic is a semiconductor composed of indium and arsenic. It has a gray cubic crystal appearance and a melting point of 942°C. Indium arsenide is used to construct infrared detectors in the wavelength range of 1-3.8um. The detector is usually a photovoltaic photodiode...

Brand Name:zmkj

Model Number:Indium arsenide (InAs)

Place of Origin:CHINA

...Indium InAs or indium mono-arsenide is a semiconductor composed of indium and arsenic. It has the appearance of a gray cubic crystal with a melting point of 942°C. Indium arsenide is used to construct infrared detectors with a wavelength range of 1-3.8um. The detector is usually a photovoltaic photodiode...

Brand Name:JIZHONG

Model Number:JZORH1000-1BIX

Place of Origin:CHINA

... with aluminum shell. High sensitivity PIN photo-diode.High index full-imported gallium arsenic MMIC device are selected for RF amplifier circuit to ensure excellent performance index of the whole machine.It can be used together with ONU or EOC to realize ...