ipd25n06s4l 30 n channel mosfet

Brand Name:INFINEON

Model Number:IPD25N06S4L-30

Place of Origin:INFINEON

IPD25N06S4L 30 25A 60V N Channel Mosfet SMD SMT Mounting Style IPD25N06S4L-30 Fet patch to-252 25A 60V MOSFET screen 4N06L30N channel DPAK-2 OptiMOS-T2 Product Attribute Attribute Value Search Similar Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: TO-252-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel...

Categories:Semiconductor IC

Country/Region:china

...,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online ...

Brand Name:STMicroelectronics

Model Number:STL150N3LLH5

Place of Origin:CHN

...MOSFET N-CH 30V 195A POWERFLAT N P Channel Mosfet Manufacturer: STMicroelectronics Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: PowerFLAT-5x6-8 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 30...

Brand Name:onsemi

Model Number:FDMS8025S

Place of Origin:original

N-Channel MOSFET Power Electronics - FDMS8025S with Superior Efficiency and Reliability Technology 30 V 24A (Ta) Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 24A (Ta), 49A (Tc) Drive Voltage (...

Model Number:NTMFS4833NT1G

Place of Origin:America

Brand Name:ON

... N-channel MOSFET Transistor; 191 A; 30 V; 8-Pin SO-8FL 3. Trans MOSFET N-CH 30V 28A 8-Pin SO-FL T/R Technological Parameters: Polarity N - Channel Dissipated power 125 W Threshold voltage 1.5 V input capacitor 5600pF @12V Drain-source voltage 30 V

Brand Name:Lingxun

Model Number:LC65R600F

Place of Origin:China

...ID TYP MAX Typ Typ LC65R600F TO-220F 1 N 7 650 30 2 4 550 640 Product Description: One of the key features of this MOSFET is its 100% avalanche tested design, which ensures that it can handle high voltage spikes and other harsh conditions without failure.

Place of Origin:China

Brand Name:ONSEMI

Model Number:FDMS1D2N03DSD

High Power MOSFET FDMS1D2N03DSD Power Clip Asymmetric Dual N-Channel MOSFET, 30 V [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize...

Brand Name:Anterwell

Model Number:SUD40N06-25L

Place of Origin:original factory

... Unit Gate-Source Voltage VGS ±20 V Continuous Drain Current (TJ = 175℃)b TC = 25℃ ID 30 A TC=100℃ 30 Pulsed Drain Current IDM 100 A Continuous Source Current (Diode Conduction) IS 34 A Avalanche Current IAR 34 A

Brand Name:TOSHIBA

Model Number:TK7A90E,S4X

...��道模式: Enhancement 商标名: MOSVIII 封装: Tube 商标: Toshiba 配置: Single 下降时间: 15 ns 高度: 15 mm 长度: 10 mm 产品类型: MOSFETs 上升时间: 20 ns 系列: TK7A90E 工厂包装数量: 50 子类别: Transistors 晶体管类型:

Brand Name:Original Factory

Model Number:NTMFS4C05NT1G

Place of Origin:CN

....5 V, Current at 25°C - 11.9A continuous drain (Ta). Specification Of NTMFS4C05NT1G FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 11.9A (Ta) Input Capacitance (Ciss) (Max)

Brand Name:Ti

Model Number:CSD87335Q3D

CSD87335Q3D Mosfet Power Transistor MOSFET 30-V Synchronous Buck NexFET Power Block 8-LSON-CLIP -55 to 150 1 Features Half-Bridge Power Block Up to 27-V VIN 93.5% System Efficiency at 15 A Up to 25-A Operation High-Frequency Operation (Up to 1.5 MHz) High-...

Place of Origin:United States

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Place of Origin:PHILIPPINE

Brand Name:Fairchild Semiconductor

Model Number:FDS7079ZN3

...-cell battery protection and charging, including protection and load switching in notebook computer and notebook battery packs. Applications: • –16 A, –30 V. RDS(ON) = 7.5 mΩ @ VGS =

Brand Name:Huixin

Model Number:BC3400

Place of Origin:China

... capability Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±12 V Continuous Drain Current ID 5.8 A Drain Current-Pulsed (note 1) IDM 30 A

Brand Name:INFINEON

Model Number:IRFP4668PBF

...MOSFET N-CH 200V 130A TO247AC Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case: TO-247-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 200 V Id - Continuous Drain Current: 130 A Rds On - Drain-Source Resistance: 9.7 mOhms Vgs - Gate-Source Voltage: - 30 V, + 30...

Place of Origin:USA

Brand Name:VISHAY

Model Number:SI2365EDS

...SI2365EDS - VISHAY - N-Channel 30 V (D-S) MOSFET. Detailed Description of SI2365EDS: EIS Part Number: EIS-SI2365EDS Manufacturer Part Number: SI2365EDS Manufacturer / Brand: VISHAY Brief Description: N-Channel 30 V (D-S) MOSFET Quantity Available: 21790...

Place of Origin:USA

Brand Name:VISHAY

Model Number:SI2365EDS

...SI2365EDS - VISHAY - N-Channel 30 V (D-S) MOSFET. Detailed Description of SI2365EDS: EIS Part Number: EIS-SI2365EDS Manufacturer Part Number: SI2365EDS Manufacturer / Brand: VISHAY Brief Description: N-Channel 30 V (D-S) MOSFET Quantity Available: 21790...

Brand Name:original

Model Number:FCB36N60NTM

Place of Origin:original

... Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 600 V Id - Continuous Drain Current: 36 A Rds On - Drain-Source Resistance: 90 mOhms Vgs - Gate-Source Voltage: - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage:

Brand Name:ROHM

Model Number:EM6K1T2R

Place of Origin:Japan

...MOSFET 2N-CH 30V .1A SOT-563-6 Manufacturer: ROHM Semiconductor Product Category: MOSFET Technology: Si Installation style: SMD/SMT Package / Box: SOT-563-6 Transistor polarity: N-Channel Number of channels: 2 Channel Vds-drain-source breakdown voltage: 30...

Brand Name:To shi ba

Model Number:TK8A60DA(STA4,Q,M)

Place of Origin:Shenzhen, China

...Trans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) TO-220SIS - Rail/Tube Technical Attributes : Description Value Channel Mode Enhancement Channel Type N Maximum Continuous Drain Current 7.5 A Maximum Drain Source Voltage 600 V Maximum Gate Source Voltage ±30 V ...