irgp4063 trench igbt transistor

Model Number:IRGP4063DPBF

Brand Name:Original

Place of Origin:US

Product Detail Categories Discrete Semiconductor Products Transistors - IGBTs - Single Manufacturer Infineon Technologies Series - Packaging Tube Part Status Active IGBT Type Trench Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic...

Brand Name:Original Factory

Model Number:AFGHL50T65SQDC

Place of Origin:CN

... generation high speed IGBT technology. Specification Of AFGHL50T65SQDC Part Number: AFGHL50T65SQDC Current - Collector (Ic) - Max: 80 A Operating Temperature(Min): -55°C (TJ) ...

Place of Origin:Original

IRGP4063-EPBF Specifications Part Status Obsolete IGBT Type Trench Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 96A Current - Collector Pulsed (Icm) ...

Brand Name:onsemi

Model Number:AFGHL40T120RLD

...IGBT Trench Field Stop 1200 V 48 A 529 W Through Hole TO-247-3 Product Attribute Attribute Value Select Attribute Manufacturer: onsemi Product Category: IGBT Transistors RoHS: Details Package / Case: TO-247-3 Packaging: Tube Brand: onsemi Product Type: IGBT Transistors Factory Pack Quantity: 30 Subcategory: IGBTs

Brand Name:FAIRCHILD

Model Number:FGA25N120ANTD

Place of Origin:Philippines

...Trench IGBT Features • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25°C • Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = 25°C • Extremely enhanced avalanche capability Description Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT...

Brand Name:FAIRCHILD

Model Number:FGA25N120ANTD

Place of Origin:USA

...Trench IGBT 25A 1200V Features • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25°C • Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = 25°C • Extremely enhanced avalanche capability Description Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT...

Model Number:FGA25N120ANTD

Place of Origin:original factory

...Trench IGBT Features • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25°C • Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = 25°C • Extremely enhanced avalanche capability Description Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT...

Brand Name:ST

Model Number:STGW60H65DFB

Place of Origin:Original Factory

Trench gate field-stop 650 V, 60 A high speed HB series IGBT Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • Low saturation ...

Brand Name:Original Manufacturer

Model Number:STGWA60H65DFB

Place of Origin:Original

... - IGBTs - Single Manufacturer STMicroelectronics Series - Packaging Tube Part Status Active IGBT Type Trench Field Stop Voltage - Collector Emitter Breakdown (Max) 650V Current - Collector (Ic) (Max) 80A Current - Collector ...

Brand Name:ON/Fairchild

Model Number:G40N60UFD

Place of Origin:Original Factory

G40N60UFD Ultra fast IGBT Transistor N-Channel with Built in Diode 600V 40A 160W, TO-3P Descriptions: Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for ...

Brand Name:Infineon Technologies/International Rectifier IOR

Model Number:IHW30N160R2FKSA1

Place of Origin:CHINA

...: TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1600 V applications offers : -

Brand Name:Infineon Technoctifier Ilogies/International ReOR

Model Number:IHW30N160R2FKSA1

...Applications Description: TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1600 V

Place of Origin:Japan

Brand Name:FUJITSU

Model Number:SKM600GA176D

...Trench IGBT Modules . Part NO: SKM600GA176D Brand: FUJITSU Date Code: 05+ Quality Warranty: 3 Months Mounting Type: Screws Overview We specialize in high power and power conversion modules of famous brands Categories include: Darlington Schottky, rectifier intelligent, IGBT...

Brand Name:Eupec

Model Number:FS150R12KE3

Place of Origin:Germany

...IGBT Transistors Module FS150R12KE3 or FS15OR12KE3 FS150R12KE3 Product Description Brand: Eupec Model: FS150R12KE3 Alternate Model: FS15OR12KE3 Control way: unidirectional Pole number: two pole Package Material :Metal Package Package Outline: Flat Shape Shutdown speed: ordinary Cooling function: heat sink Description: EconoPACK ™ 3 1200V sixpack IGBT...

Brand Name:Infineon / IR

Model Number:IKW30N60H3

Place of Origin:Germany

... K30H603 IGBT Transistors IKW30N60H3 K30H603 silk screen new imported triode IGBT high power welding tube IGBT Transistors 600V 30A 187W Product Attribute Attribute Value Search Similar Manufacturer: Infineon Product Category: IGBT Transistors RoHS...

Brand Name:SIEMENS

Model Number:6SY7000-0AC37

...-0AE73 S SIMOVERT MASTER DRIVES IGBT TRANSISTOR MODULE 300A 1200V Descripition Part Number 6SY7000-0AE73 Manufacturer / Brand SIEMENS Category Discrete Semiconductor Products > Transistors - IGBTs - Modules Description IGBT Modules Description IC FLASH ...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

...IGBT High Power Insulated Gate Bipolar Transistor (IGBT) is a high voltage device used in many applications, such as on-board chargers, welding machines, switching power supplies, photovoltaic inverters, energy storage, and more. With a current density of 400A/cm² and a faster switching speed, High Power IGBT offers a reliable and efficient solution for these applications. High Power IGBT...

Brand Name:Infineon

Model Number:AUIRG4PH50S

Place of Origin:TAIWAN

...IGBT Transistors 1200V DC-1 KHZ (STD) DISCRETE AUTO IGBT 1.FEATURES Standard: Optimized for minimum saturation voltage and low operating frequencies (< 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency • Industry standard TO-247AC package • Lead-Free • Automotive Qualified * 2.BENEFITS Generation 4 IGBT's offer highest efficiency available IGBT...

Brand Name:Microchip

Model Number:APT25GT120BRG

Place of Origin:USA

... Semiconductors APT25GT120BRG TO-247-3 IGBT Transistors Product Description: The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast...

Brand Name:original

Model Number:IKW25T120

Place of Origin:original

IKW25T120 Through Hole IGBT Transistors LOW LOSS DuoPack 1200V 25A ●Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF compared to BUP314D ●...