jfet n channel 30v low ciss

Brand Name:original

Model Number:2N4416

Place of Origin:original

...Package options. DESCRIPTION The -30V InterFET 2N4416 and 2N4416A are targeted for sensitive mixer and VHF Amplifier amplifier designs. Gate leakages are typically less than 10pA at room ...

Brand Name:AOS

Model Number:AOSS21311C

Place of Origin:original

...Channel 30V Low Gate Charge Package SOT-23-3 FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 4.3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 45mOhm @ 4.3A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss...

Brand Name:Original Factory

Model Number:QH8MA4TCR

Place of Origin:CN

... package. Specification Of QH8MA4TCR Part Number QH8MA4TCR Gate Charge (Qg) (Max) @ Vgs 15.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 640pF @ 15V Power - Max 1.5W Operating Temperature 150°C (TJ) Features Of

Brand Name:Hua Xuan Yang

Model Number:AOD418

Place of Origin:ShenZhen China

...30V N-Channel MOSFET General Description The AOD418/AOI418 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high current load applications. Parameters Part Number Status Package Polarity VDS (V) VGS (±V) ID (A) PD (W) RDS(ON) (mΩ max)† at VGS= VGS(th) (max V) Ciss...