ksd1408ytu power mosfet 100a

Brand Name:onsemi

Model Number:KSD1408YTU

Place of Origin:China

KSD1408YTU Power MOSFET 100A Current 3.8mandOmega; Low Rds(on) Fast Switching High Efficiency 150anddeg;C Rating Ultra-Low Gate Charge Superior dv/dt Ruggedness Halogen-Free andamp; RoHS Compliant andnbsp; Features 1:Ultra-Low On-Resistance (3.8mandOmega;): Minimizes conduction losses for higher system efficiency and reduced heat generation 2:High Current Capability (100A): Supports power-intensive applications including motor drives and power

Place of Origin:China

Brand Name:ONSEMI

Model Number:FDL100N50F

High Power MOSFET FDL100N50F N-Channel UniFET^TM FRFET^® 500 V 100A 55mΩ TO-264 High Power MOSFET FDL100N50F N-Channel UniFETTM FRFET® 500 V 100A 55mΩ TO-264 [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-...

Brand Name:Infineon

Model Number:BSC011N03LSATMA1

Place of Origin:original

BSC011N03LSATMA1 MOSFET Power Electronics N-Channel OptiMOSTM Power-MOSFET 30V FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 37A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min...

Brand Name:STMicroelectronics

Model Number:STP100N8F6

Place of Origin:Shenzhen, China

...MOSFET N-channel 80 V, 0.008 Ohm type, 100 A, STripFET F6 Power MOSFET in a TO-220 package General Description : This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Distinctive Characteristics : Part No: STP100N8F6 Description: Trans MOSFET N-CH 80V 100A 3-Pin(3+Tab) TO-220 Tube Product Category Power

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

... based on the national military standard production line, this MOSFET is designed to meet the stringent requirements of military and industrial applications where performance and durability are paramount. As a device type MOSFET, this high power MOSFET is

Brand Name:ONSEMI

Model Number:NTF3055L108T1G

Place of Origin:Original

... Circuits Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits STOCK LIST SN74LVC1G14DBVR 96000 TI 16+ SOT23-5

Brand Name:HT

Model Number:F4N65L TO-220F-3L

Place of Origin:China

...POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F4N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power

Brand Name:Original Factory

Model Number:SCT070H120G3AG

Place of Origin:CN

... capacitances and very high switching operations. Specification Of SCT070H120G3AG Part Number: SCT070H120G3AG Drain-Source Voltage: 1200V Drain Current (Pulsed): 100A Zero Gate Voltage Drain Current(VGS = 0 V, VDS = 1200 V) Max: 10µA

Brand Name:xingtongli

Model Number:GKDH24-100CVC

Place of Origin:China

High power 24v 100a dc rectifier for gold electroplating Application of High power 24v 100a dc rectifier for gold electroplating It is mainly used in the electrolysis of non-ferrous metals: aluminum, magnesium, zinc, lead, copper, manganese and manganese ...

Place of Origin:China

Brand Name:Huawei

Model Number:ZTE ZXDU68

ZTE Power 48V 100A Wall-mounted Cabinet ZTE ZXDU68 H201(V4.1R01M01) Telecom Power System Contact Us ZXDU68 H201 High Frequency Switching Power System ZXDU68 H201 is wall-mounted high frequency switching power systems designed by ZTE, ultimate system ...

Brand Name:IXYS

Model Number:IXFK27N80Q

Place of Origin:Original Factory

IXFK27N80Q N Channel Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS ...

Brand Name:IOR

Model Number:IRFZ44NPBF

Place of Origin:CHINA

...POWER MOSFET 55V 49A 94W Through Hole TO-220 Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs...

Brand Name:Hua Xuan Yang

Model Number:2N60

Place of Origin:ShenZhen China

...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

Brand Name:IR Original

Model Number:IR21094STRPBF

Place of Origin:Original & New

IR21094STRPBF high voltage, high speed power MOSFET and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS...

Model Number:IRF640NPBF

Place of Origin:original factory

...HEXFET® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free Description Fifth Generation HEXFET® Power MOSFETs from ...

Brand Name:Wisdom

Model Number:LD808-GL26100

Place of Origin:China

100A/26V Laser Diode Driver Power Supply for Hair Removal Product Name 100A/26V 808 Power Supply Model Number LD808-GL26100 Size 236*157*82mm Weight 2.9KG Input Voltage AC220V ±20% / AC110V ±10% 50HZ Output Voltage 12~26V,5-14 bars Output Current 0~100A ...

Brand Name:original

Model Number:M68702H

Place of Origin:Original Manufacturer

...POWER MOSFET TRANSISTORS M68702H FOR FM MOBILE RADIO Condition: 100% Brand New Product Part Status: Active Package: H2 Lead Free Status / RoHS Status: Compliant Output Power: 60W Voltage: 12.5V High Light: n channel mosfet transistor , n channel transistor M68702H 150-175MHz, 12.5V, 60W, RF Power...

Brand Name:FUJI

Model Number:2MBI100TA-060-50

Place of Origin:JAPAN

2MBI100TA-060-50 Semiconductor IGBT frequency converter power module 100A 600V new original in stock Applicable category This specification is applied to IGBT Module named 2MBI100TA-060 Storage and transportation notes ・ The module should be stored at a ...

Place of Origin:PHILIPPINE

Brand Name:Fuji Electric

Model Number:FMH23N50E

...power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing ...

Brand Name:JUYI

Model Number:JY09M

Place of Origin:China

... density and reduces the on-resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.