low ciss high breakdown voltage mosfet

Brand Name:Lingxun

Model Number:CS7N60A2

Place of Origin:China

7A600V High Breakdown Voltage Mosfet CS7N60A2 To-220F With Low Ciss Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) Qg (nC) Ciss (pF) Min. Min. Min. Max. Typ MAX Typ Typ CS7N60A2 TO-220F N 7 600 ±30 2 4 980 1300 ...

Brand Name:Anterwell

Model Number:EE2-5NU-L

Place of Origin:original factory

...High breakdown voltage, Surface mounting type DESCRIPTION The EE2 series surface-mounting type sustaining high-performance of NEC EC2 series. FEATURES Compact and light weight 2 form c contact arrangement Low power consumption Reduced mounting space : 15 mm × 9.5 mm High-breakdown voltage of coil to contacts : 1500 Vac, 2500 V (rise time : 2 µs, fall time : 10 µs) Low...

Model Number:EE2-5NU-L

Place of Origin:original factory

...High breakdown voltage, Surface mounting type DESCRIPTION The EE2 series surface-mounting type sustaining high-performance of NEC EC2 series. FEATURES Compact and light weight 2 form c contact arrangement Low power consumption Reduced mounting space : 15 mm × 9.5 mm High-breakdown voltage of coil to contacts : 1500 Vac, 2500 V (rise time : 2 µs, fall time : 10 µs) Low...

Brand Name:onsemi

Model Number:FDN342P

Place of Origin:original

...MOSFET Power Electronics: High Power Low Loss High Efficiency Switching Solutions Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @ 25°C 2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 80mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 9 nC @ 4.5 V Vgs (Max) ±12V Input Capacitance (Ciss...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

...High Voltage MOSFET – an embedded FRD HV MOSFET with a low on-resistance and high voltage/ultra-high voltage rating. Designed with MOSFET technology, this ultra-high voltage MOSFET is perfect for applications that require high voltage or ultra-high voltage power. Its low on-resistance provides high efficiency and low power loss. This type N MOSFET is the perfect choice for any high voltage or ultra-high

Brand Name:JUYI

Place of Origin:China

High Speed Power MOSFET and IGBT driver 3-Phase High Voltage Gate Driver DESCRIPTION The JY213H is a high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels for 3-phase gate driver. Built-in deadtime protection and Shoot-through protection that prevent half-bridge breakdown. The UVLO circuits prevent malfunction when VCC and VBS are lower than the specified threshold voltage. 600V high-voltage

Model Number:IRFR9214PBF

...MOSFET P-Chan Drain-Source Breakdown Voltage 250 V Descriptions of Aviation Parts: Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs...

Brand Name:original

Model Number:2N4416

Place of Origin:original

... are targeted for sensitive mixer and VHF Amplifier amplifier designs. Gate leakages are typically less than 10pA at room temperatures. The “A” variant has a higher breakdown Voltage. The

Brand Name:Hua Xuan Yang

Model Number:AOD409G

Place of Origin:ShenZhen China

High Switching Speed Mosfet Power Transistor For Linear Power Supplies General Description • Trench Power MOSFET technology • Low R DS(ON) • Logic Level Driving • RoHS and Halogen-Free Compliant Application • Industrial and Motor Drive applications Parameters Part Number Status Package Polarity VDS (V) VGS (±V) ID (A) PD (W) RDS(ON) (mΩ max)† at VGS= VGS(th) (max V) Ciss...

Brand Name:Hua Xuan Yang

Model Number:AOD409G

Place of Origin:ShenZhen China

High Switching Speed Mosfet Power Transistor For Linear Power Supplies General Description • Trench Power MOSFET technology • Low R DS(ON) • Logic Level Driving • RoHS and Halogen-Free Compliant Application • Industrial and Motor Drive applications Parameters Part Number Status Package Polarity VDS (V) VGS (±V) ID (A) PD (W) RDS(ON) (mΩ max)† at VGS= VGS(th) (max V) Ciss...

Brand Name:Huixin

Model Number:H10N65

Place of Origin:China

N Channel High Voltage Mosfet 650V 10A High Accuracy RoHS Compliant TO-220F Applications Adapter & Charger SMPS Standby Power AC-DC Switching Power Supply LED driving power Features Low On Resistance Low Gate Charge Peak Current vs Pulse Width Curve RoHS ...

Brand Name:ZIITEK

Model Number:TIF120-32-05US

Place of Origin:China

...Breakdown Voltage 94 V0 high cost-effective silicone pads for display card The TIF120-32-05US thermal silicone pad is a product with both performance and economy. It is a unique thermal pad with low oil permeability, low thermal resistance, high softness and high...

Brand Name:Antaeus

Model Number:A-040

Place of Origin:China

... engineering material with excellent performance. It has a high hardness of 9.0 Mohs, low thermal expansion of 7.2 x 10-6/K, and a thermal conductivity of 20-30 W/m.K. Alumina Ceramic Components is a highly reliable and cost-effective material used in a

Brand Name:ST

Model Number:TIP122

Place of Origin:Original Factory

MOSFET Transistors TIP122 Darlington NPN 100V 5A 2000mW TO220 Power Transistor TIP120, TIP121, TIP122 TIP125, TIP126, TIP127 Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Features Designed for General purpose linear and switching applications. Low...

Categories:Discrete Semiconductors

Country/Region:china

...voltage mosfet For health care,wireless charger Applications: health care, wireless charger PSF70060B is PowerCubeSemi’s second generation of high voltage Super Junction MOSFET with FRD that is utilizing charge balance technology for outstanding low on-resistance and ...

Brand Name:Original brand

Model Number:STWA65N60DM6

Place of Origin:Original

Mosfet Power Transistor STWA65N60DM6 Mosfet N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power TO-247 Feature • Extremely low RDS(on)*area and Qg and optimized capacitance profi le for light load conditions • Extremely high dv/dt • Optimized body diode...

Brand Name:IR

Model Number:IR2011STRPBF

Place of Origin:THAILAND

IR2011STRPBF Computer IC Chip HIGH AND LOW SIDE DRIVER high speed powerMOSFET driver Features ·Floating channel designed for bootstrap operation Fully operational up to +200V Tolerant to negative transient voltage, dV/dt immune ·Gate drive supply range fro...

Model Number:TC4420EOA713

Brand Name:Original

Place of Origin:US

Product Description Packaging Tape & Reel (TR) Part Status Active Driven Configuration Low-Side Channel Type Single Number of Drivers 1 Gate Type N-Channel, P-Channel MOSFET Voltage - Supply 4.5 V ~ 18 V Logic Voltage - VIL, VIH 0.8V, 2.4V Current - Peak ...

Brand Name:AI

Model Number:BDV-I

Place of Origin:China

100KV Transformer Oil Tester Kit I. Introduction: Insulating oil in electrical power apparatus serves two primary roles, as an insulator and a coolant. As an insulating liquid, oil’s most important property is a high dielectric strength and as a cooling ...

Brand Name:Original Factory

Model Number:MSCSM120AM03CT6LIAG

Place of Origin:CN

..., ultra-low weight, and low junction to case thermal resistance. Specification Of MSCSM120AM03CT6LIAG Part Number MSCSM120AM03CT6LIAG Input Capacitance (Ciss) (Max) @ Vds 30200pF @ 1kV Power - Max 3.215kW (Tc) Operating Temperature -40°C ~ 175°C (TJ)