low junction capacitance power mosfet

Brand Name:Lingxun

Place of Origin:China

Product Description: One of the most significant benefits of high voltage power semiconductors is their ability to handle high voltages and currents efficiently. They are ideal for use in high voltage power supplies, power tools, air purifiers, and other ...

Model Number:G12180-010A

Place of Origin:Japan

... (Typical) 1.55 μm Light sensitivity (typical) 1.1 A/W Dark current (max) 4 nA Cut-off Frequency (typical) 60 MHz Junction Capacitance (typical) 55 pF Noise equivalent power (typical) 1.4×10-14 W/Hz1/2 Sensitivity wavelength range 0.9 to 1.7 μm

Brand Name:ON

Model Number:2N5458

Place of Origin:China

.... Features • N−Channel for Higher Gain • Drain and Source Interchangeable • High AC Input Impedance • High DC Input Resistance • Low Transfer and Input Capacitance • Low Cross−Modulation and Intermodulation Distortion •

Brand Name:Infineon

Model Number:SPA04N80C3XKSA1

Place of Origin:China

...Power MOSFET 800V Ultra-High Voltage 4A Current Low Rds(on) Super Junction Technology Low Gate Charge High Efficiency Halogen-Free Robust Performance for SMPS & Industrial Drives Features New revolutionary high voltage technology Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effective capacitances...

Brand Name:Infineon Technologies

Model Number:IRF6645TRPBF

Place of Origin:Multi-origin

...power MOSFET with low gate charge and fast switching capabilities 2. Low on-resistance and low input capacitance 3. Low gate input resistance and low gate-source capacitance 4. Low total gate charge and low gate input capacitance 5. Low gate-source threshold voltage 6. Low drain-source on-resistance 7. High power...

Brand Name:IXYS

Model Number:IXFK27N80Q

Place of Origin:Original Factory

...Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • International standard packages z Low...

Brand Name:ON

Model Number:2N5458

Place of Origin:China

.... Features • N−Channel for Higher Gain • Drain and Source Interchangeable • High AC Input Impedance • High DC Input Resistance • Low Transfer and Input Capacitance • Low Cross−Modulation and Intermodulation Distortion •

Brand Name:Original Factory

Model Number:SCT011H75G3AG

Place of Origin:CN

... temperature rang is -55°C to 175°C, Very low RDS(on) over the entire temperature range. Specification Of SCT011H75G3AG Part Number: SCT011H75G3AG Package: H²PAK-7 Gate-Source Voltage: -10V To 22V Thermal Resistance, Junction-To-Ambient: 50 °C/W

Brand Name:Original brand

Model Number:NVHL040N65S3F

Place of Origin:Original

... for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is

Brand Name:HT

Model Number:F4N65L TO-220F-3L

Place of Origin:China

...POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F4N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

Ultra Small Package Superjunction Power MOSFET with Large EMI Margin *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: antialiased; } img, picture, video, canvas, ...

Place of Origin:PHILIPPINE

Brand Name:International Rectifier

Model Number:IRF7342Q

...Power MOSFET Description: Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150°C junction...

Brand Name:Infineon Technologies/International Rectifier IOR

Model Number:IRFB7440PBF IRFB4310PBF IRFB4115PBF

Place of Origin:CHINA

...MOSFETs Transistors N-Channel 180A 200W Through Hole TO-220AB HEXFET FETs MOSFETs ---IRFB7440PBF 40V 120A IRFB4310PBF 100V 130A IRFB4115PBF 150v 104A​ Description: This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175°C junction

Brand Name:STMicroelectronics

Model Number:STB24N60DM2

...Power Mosfet Transistors Field Effect Transistor Discrete N-Channel N-channel 600 V, 0.13 Ω typ., 21 A MDmesh™ DM2 Power MOSFETs in D²PAK, TO-220 and TO-247 packages App Characteristics Features Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Description These high voltage N-channel Power

Place of Origin:China

Brand Name:ONSEMI

Model Number:FAN3224TU_F085

High Power MOSFET FAN3224TU_F085 Low-Side Gate Drivers, Dual 4-A High-Speed [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in ...

Brand Name:Infineon Technologies

Model Number:SPW20N60C3

Place of Origin:China

... of CoolMOS™ with market entry in 2001. C3 is the "working horse" of the portfolio. Summary of Features: Low specific on-state resistance (RDS(on)*A) Very low energy storage in output capacitance (Eoss) @400V Low gate charge (Qg) Fieldproven CoolMOS™

Brand Name:Hua Xuan Yang

Model Number:2N60

Place of Origin:ShenZhen China

...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

Brand Name:IOR

Model Number:IRFZ44NPBF

Place of Origin:CHINA

...POWER MOSFET 55V 49A 94W Through Hole TO-220 Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs...

Brand Name:JUYI

Model Number:JY09M TO 252

Place of Origin:China

... the high cell density and reduces the on-resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. FEATURES ●

Brand Name:Original Factory

Model Number:IPT020N10N5ATMA1

Place of Origin:China

Power MOSFET Original Integrated Circuit IPT020N10N5ATMA1 Product Description Less paralleling required Increased power density Reduced switching and conduction losses Product Specifications Part Number: IPT020N10N5ATMA1 FET Type: N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 273W (Tc) Series: OptiMOS™5 Technology: MOSFET (Metal Oxide) Input Capacitance...