low power mosfet

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

Low Power Loss SGT Process Application Low Rds(ON) Energy Storage Field Effect Transistor *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } ...

Brand Name:Standar

Model Number:AS1360-33-T

Place of Origin:Malaysia

1.5uA Low Power Mosfet Transistor AS1360-33-T Positive Voltage Regulator AS1360 1.5µA Low-Power, Positive Voltage Regulator 1 General Description The AS1360 low-power, positive voltage regulator was designed to deliver up to 250mA while consuming onl...

Brand Name:Infineon

Model Number:IR2104PBF

Place of Origin:Mulit-origin

...: The IR2104PBF is a high-voltage, high-speed power MOSFET and IGBT driver with independent high and low side referenced output channels. This driver is designed to drive power MOSFETs and IGBTs in the high side configuration which operates up to 600V...

Model Number:MAX483ESA

Place of Origin:china

Specifications 1 competitive price 2 warranty of each part 3 fast delicery 4 new and original

Brand Name:HT

Model Number:F4N65L TO-220F-3L

Place of Origin:China

...POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F4N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power

Brand Name:IXYS

Model Number:IXFK27N80Q

Place of Origin:Original Factory

...Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • International standard packages z Low...

Place of Origin:China

Brand Name:ONSEMI

Model Number:FAN3224TU_F085

High Power MOSFET FAN3224TU_F085 Low-Side Gate Drivers, Dual 4-A High-Speed [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in ...

Brand Name:Huixin

Model Number:BC2301

Place of Origin:China

SOT-23 Plastic-Encapsulate MOSFETS BC2301 P-Channel 20-V(D-S) MOSFET BC2301 SOT-23 Datasheet.pdf FEATURES TrenchFET Power MOSFET MARKING: 2301 APPLICATIONS Load Switch for Portable Devices DC/DC Converter Maximum ratings (Ta=25℃ unless otherwise noted) ...

Place of Origin:PHILIPPINE

Brand Name:Micrel Semiconductor

Model Number:MIC5016BWM

...designed for gate control of N-channel, enhancement-mode, power MOSFETs used as high-side or low-side switches. The MIC5016/7 can sustain an on-state output indefinitely. The MIC5016/7 operates from a 2.75V to 30V supply. In highside configurations, the

Brand Name:Hua Xuan Yang

Model Number:2N60

Place of Origin:ShenZhen China

...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

Brand Name:UCHI

Model Number:HT7550 7530

Place of Origin:Dongguan China

...Low Power LDO​ Features ● Low power consumption ● Low voltage drop ● Low temperature coefficient ● High input voltage (up to 24V) ● Related product model: HT7536-1,HT7550-1,HT7536-1,HT7533-1,HT7530-1... ● High output current : 100mA (Pd 250mW) ● Output voltage accuracy: tolerance 3% ● TO-92, SOT-89 and SOT-25 package Applications ● Battery powered...

Brand Name:ON Semiconductor

Model Number:MMDF3N04HDR2

Place of Origin:Shenzhen, China

... high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. These devices are designed for use in low voltage, high speed switching applications where power efficiency is important.

Brand Name:JUYI

Model Number:JY09M TO 252

Place of Origin:China

... the high cell density and reduces the on-resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. FEATURES ●

Brand Name:IR Original

Model Number:IR21094STRPBF

Place of Origin:Original & New

IR21094STRPBF high voltage, high speed power MOSFET and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS...

Brand Name:Infineon

Model Number:IRF7351TRPBF

Place of Origin:China

...Low 0.0015andOmega; Power MOSFET in Dual PQFN with Avalanche Rating AEC-Q101 175anddeg;C -40V/-30V Logic Level and Halogen-Free for High-Efficiency Power Conversion andnbsp; Features Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current 20V VGS Max. Gate Rating andnbsp; Applications Synchronous Rectifier MOSFET for Isolated DC-DC Converters Low Power...

Brand Name:Original Factory

Model Number:MSC750SMA170B

Place of Origin:CN

...Power MOSFET Transistors TO-247-3​ Product Description Of MSC750SMA170B MSC750SMA170B is Silicon Carbide N-Channel Power MOSFET, Low capacitances and low gate charge, package is TO-247-3. Specification Of MSC750SMA170B Part Number: MSC750SMA170B Technology: SiCFET (Silicon Carbide) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +23V, -10V Power...

Brand Name:JUYI

Model Number:JY21L

Place of Origin:China

JY21L High and Low side driver General Description The product is a high voltage, high speed power MOSFET and IGBT driver based on P-SUB P-EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT independently which ...

Brand Name:Infineon Technologies/International Rectifier IOR

Model Number:IRLR3915TRPBF

... Semiconductor Products N-Channel 55 V 30A (Tc) 120W (Tc) Surface Mount D-Pak Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are

Brand Name:Infineon Technologies

Model Number:SPW20N60C3

Place of Origin:China

... of CoolMOS™ with market entry in 2001. C3 is the "working horse" of the portfolio. Summary of Features: Low specific on-state resistance (RDS(on)*A) Very low energy storage in output capacitance (Eoss) @400V Low gate charge (Qg) Fieldproven CoolMOS™

Brand Name:Original Factory

Model Number:BSC004NE2LS5ATMA1

Place of Origin:China

...Integrated Circuits Chip N Channel Power MOSFET Product Description Benchmark switching performance (minimum quality factor RDS(on) x Qg and RDS(on) x Qgd) Specific components optimized for toroidal circuits to provide low RDS(on) Parts with integrated ...