low rds on resistance mosfet

Brand Name:Infineon Technologies

Model Number:IRLML0100TRPBF

Place of Origin:original

...MOSFET High Performance High Efficiency Low RDS(ON) Power Electronics Product Listing: IRLML0100TRPBF MOSFET Product Description: This is an N-Channel Power MOSFET designed for low voltage, high current switching applications. It is designed to be used in applications such as audio amplifiers, DC-DC converters, DC motor drivers, battery management, and power management circuits. Features: - Low On-Resistance RDS...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

High EAS Capability Low Voltage MOSFET Trench/SGT Structure Process Low Rds(ON) *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: ...

Brand Name:onsemi

Model Number:KSD1408YTU

Place of Origin:China

... Power MOSFET 100A Current 3.8mandOmega; Low Rds(on) Fast Switching High Efficiency 150anddeg;C Rating Ultra-Low Gate Charge Superior dv/dt Ruggedness Halogen-Free andamp; RoHS Compliant andnbsp; Features 1:Ultra-Low On-Resistance (3.8mandOmega;): ...

Place of Origin:CN

Brand Name:Original Factory

Model Number:FTCO3V455A2

... Guaranteed + 100% Low Price Guaranteed + Export to 108 countries, customer satisfaction rate: 99.9% !! [Company profile] Shenzhen Mingjiada Electronics Co., Ltd. is an authorized ...

Brand Name:Infineon Technologies

Model Number:SPW20N60C3

Place of Origin:China

... of CoolMOS™ with market entry in 2001. C3 is the "working horse" of the portfolio. Summary of Features: Low specific on-state resistance (RDS(on)*A) Very low energy storage in output capacitance (Eoss) @400V Low gate charge (Qg) Fieldproven CoolMOS™

Brand Name:Hua Xuan Yang

Model Number:AOD424G

Place of Origin:ShenZhen China

...MOSFET General Description • Trench Power MOSFET technology • Low R DS(ON) • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing, Servers, and POL • Battery protection switch Parameters Part Number Status Package Polarity VDS (V) VGS (±V) ID (A) PD (W) RDS...

Brand Name:INFINEON

Model Number:IRF7342TRPBF

Product Introduction of Infineon IRF7103TRPBF N-Channel MOSFETProduct Introduction of Infineon IRF7342TRPBF N-Channel MOSFET 1. Product Overview Infineon IRF7103342TRPBF is a high-performance N-channel enhancement-mode metal-oxide-semiconductor field-...

Brand Name:SANYO

Model Number:2SK1423

Place of Origin:CHINA

2SK1423 K1423 TO3P Ultrahigh-Speed Switching Applications Low ON-state resistance N-Channel MOSFET List Of Other Electronic Components In Stock SP6887ER4-L/TR SIPEX/EXA FSB660A FAIRCHILD NLV25T-470J-PF TDK DS1337S+T ...

Brand Name:Ti

Model Number:CSD13381F4

CSD13381F4 Mosfet Power Transistor MOSFET 12V N-CH Pwr MOSFET 1 Features Low On-Resistance Low Qg and Qgd Low Threshold Voltage Ultra-Small Footprint (0402 Case Size) – 1.0mm×0.6mm Ultra-Low Profile – 0.35 mm Height Integrated ESD Protection Diode...

Brand Name:NXP

Model Number:BUK201-50Y

Place of Origin:Malaysia

... power switch based on MOSFET technology in a Nominal load current (ISO) 5 pin plastic envelope, configured as a single high side switch. FEATURES Vertical power DMOS switch Low on-state resistance 5 V logic compatible input Overtemperature protection - self...

Brand Name:FAIRCHILD

Model Number:FDN304PZ

Place of Origin:Original

...MOSFET switching power mosfet Features · ► –2.4 A, –20 V. RDS(ON) = 52 mW @ VGS = –4.5 V RDS(ON) = 70 mW @ VGS = –2.5 V RDS(ON) = 100 mW @ VGS = –1.8 V ► Fast switching speed ► ESD protection diode ► High performance trench technology for extremely low RDS(ON) ► SuperSOTTM -3 provides low RDS...

Brand Name:IXYS

Model Number:IXFK27N80Q

Place of Origin:Original Factory

...Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • International standard packages z Low RDS...

Brand Name:Original brand

Model Number:NTMFS5H419NLT1G

Place of Origin:Original

Mosfet Power Transistor NTMFS5H419NLT1G MOSFET T8 40V Low Coss SMD/SMT Feature • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant Categories MOSFET T8 40V LOW COSS NTMFS5H419NLT1G Transistor Polarity N-Channel Channel No. 1 Channel Leakage Source on-resistance...

Brand Name:HT

Model Number:D7N65 TO-252W

Place of Origin:China

...MOSFET DESCRIPTION The D7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors. Features • RDS...

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:8H02ETS

...MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 22mΩ @ VGS=4V RDS...

Brand Name:Huixin

Model Number:BSS138

Place of Origin:China

SOT-23 Plastic-Encapsulate MOSFETS BSS138 N-Channel 50-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID 50 V 3.5Ω@10V 220mA 6Ω@4.5V BSS138 SOT-23 Datasheet.pdf FEATURES 1.High density cell design for extremely low RDS(on) 2.Rugged and Relaible APPLICATIONS 1.Direct ...

Brand Name:Original Factory

Model Number:BSC004NE2LS5ATMA1

Place of Origin:China

...Circuits Chip N Channel Power MOSFET Product Description Benchmark switching performance (minimum quality factor RDS(on) x Qg and RDS(on) x Qgd) Specific components optimized for toroidal circuits to provide low RDS(on) Parts with integrated Schottky ...

Brand Name:JUYI

Model Number:JY13M

Place of Origin:China

... in H-bridge, Inverters and other applications. FEATURES Device VBR(DSS) RDS(ON) MAX TJ=25ºC Package N-Channel 40V <30mΩ@VGS=10V,ID=12A TO252-4L <40mΩ@VGS=4....

Brand Name:Alpha & Omega Semiconductor Inc.

Model Number:STW48N60DM2

...low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Applications Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS...

Model Number:FDS6699S

Place of Origin:America

Brand Name:Fairchild

... performance Trench technology for extremely low RDS (ON) and fast switching 5. High power and current handling capability 6. 100% RG (gate resistance) tested Technological Parameters: Voltage Rating (DC) 30.0 V Current Rating 21.0 A Number of Channels 1