low rds on silicon carbide mosfet

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

Low On Resistance Silicon Carbide MOSFET Device for Etc. Applications *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: antialiased; } img, picture, video, canvas, ...

Brand Name:Original Factory

Model Number:SCTW100N65G2AG

Place of Origin:CN

...Silicon Carbide MOSFET 650V 100A 20mOhm Product Description Of SCTW100N65G2AG SCTW100N65G2AG Automotive-grade silicon carbide Power MOSFET 650 V, 100 A, 20 mΩ (typ., TJ = 25 °C), in an HiP247 package. Specification Of SCTW100N65G2AG Part Number SCTW100N65G2AG Drain to Source Voltage (Vdss) 650 V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 18V Rds...

Place of Origin:PHILIPPINE

Brand Name:Fuji Electric

Model Number:FMH23N50E

...power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate ...

Brand Name:Infineon Technologies

Model Number:IRFR120NTRLPBF

Place of Origin:Multi-origin

This listing is for one IRFR120NTRLPBF MOSFET Power Electronics. This is an N-channel enhancement mode silicon gate power field effect transistor. Features of the IRFR120NTRLPBF include: • Drain-Source Voltage: 60V • Continuous Drain Current: -11A • Power ...

Brand Name:FUJI

Model Number:FMH23N50E

Place of Origin:Original

... N-Channel FMH23N50E Silicon Power Mosfet 23a 500v Dc-Dc Converters Power Supply Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Features Maintains both low power loss and low noise Lower RDS(on) characteristic More ...

Brand Name:zmkj

Model Number:4inch--N,4H-semi

Place of Origin:china

...Silicon Carbide substrates for semiconductor device, Application areas 1 high frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN, diodes, IGBT, MOSFET 2 optoelectronic devices: mainly used in GaN/SiC blue LED substrate material (GaN/SiC) LED Advantagement • Low lattice mismatch • High thermal conductivity • Low...

Brand Name:Infineon Technologies

Model Number:IMZ120R090M1H

Place of Origin:United States

... Type N-Channel Technology SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 1200 V Current - Continuous Drain (Id) @ 25°C 26A (Tc) Drive Voltage (Max Rds On, Min Rds On) 15V, 18V Rds On (Max) @ Id, Vgs 117mOhm @ 8.5A, 18V Vgs(th) (Max)

Brand Name:Ti

Model Number:FDMS6681Z

... combination for low rDS(on) HBM ESD Protection Level of 8kV Typical(Note 3) MSL1 Robust Package Design RoHS Compliant General Description The FDMS6681Z has been designed to minimize losses in load switch applications. Advancements in both silicon and

Brand Name:TOSHIBA

Model Number:TPC8111

Place of Origin:Taiwan

... • Low drain-source ON resistance: RDS (ON) = 8.1 mΩ (typ.) • High forward transfer admittance: |Yfs| = 23 S (typ.) • Low leakage current: IDSS = −10 µA (max) (VDS = −30 V) • Enhancement-mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID =

Place of Origin:Original

SCT3060ALGC11 Specifications Part Status Active FET Type N-Channel Technology SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 39A (Tc) Drive Voltage (Max Rds On,Min Rds On) 18V Vgs(th) (Max) @ Id 5.6V @ 6...

Brand Name:Hua Xuan Yang

Model Number:AP12N10D

Place of Origin:ShenZhen China

AP12N10D Power Switch Transistor , Original Silicon Power Transistor General Description: The AP12N10D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable...

Brand Name:original

Model Number:IRLML6401TRPBF

...MOSFET SOT23-3 IRLML6401TRPBF Products Description: MOSFET; Power; P-Ch; VDSS -12V; RDS(ON) 0.05Ohm; ID -4.3A; Micro3; PD 1.3W; VGS +/-8V Trans MOSFET P-CH 12V 4.3A 3-Pin Micro T/R Transistor: P-MOSFET; unipolar; logic level; -12V; -4.3A; 1.3W These P-Channel MOSFETs from International Rectifier utilize advancedprocessing techniques to achieve extremely low on-resistance per silicon...

Brand Name:Infineon

Model Number:IRF4905PBF

Place of Origin:China

IRF4905PBF andnbsp; FEATURES Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175anddeg;C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free andnbsp; Description Fifth Generation HEXFETs from ...

Categories:Onsemi Ic

Country/Region:china

...°C to 175°C Package: TO-247-3 The FSB70450 is a silicon carbide (SiC) P-channel MOSFET from Infineon Technologies. Key Features: Industry-leading 1200V blocking voltage Provides efficient switching of up to 45A loads Ultra-low on-resistance of 90mΩ for