low threshold voltage mosfet to 252

Brand Name:Lingxun

Place of Origin:China

Model Number:LG50N10AD

*, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: antialiased;}img, picture, video, canvas, svg {display: block;max-width: 100%;}input, button, textarea, select {font: ...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

Low Voltage Power MOSFET with Trench/SGT Structure Process and Smaller RSP *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: antialiased; } img, picture, video, ...

Brand Name:IXYS

Model Number:IXTQ130N10T

Place of Origin:original

...: TO-247 Product Description: The IXYS IXTQ130N10T is an N-channel MOSFET with a max drain source voltage of 100V and a max drain current of 130A. This device offers a low RDS(on) of 0.01 Ohm and is housed in a TO-247 package. It is designed for use in

Brand Name:Infineon Technologies

Model Number:SPW47N60C

Place of Origin:USA

...MOSFETs RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case: TO-247-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 600 V Id - Continuous Drain Current: 47 A Rds On - Drain-Source Resistance: 70 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 2.1 V Qg - Gate Charge: 252...

Brand Name:INFINEON

Model Number:IPD100N04S402ATMA1

Place of Origin:original

...MOSFET transistor commonly used in fields such as DC power switches, motor control, lighting control, and electronic transformers. Conclusion: IPD100N04S402ATMA1 has the characteristics of low conduction resistance, high switching speed, low threshold voltage, and high temperature working ability, which can improve system efficiency and reliability. Parameters: Drain Source Voltage...

Brand Name:Hua Xuan Yang

Model Number:AP30N10D

Place of Origin:ShenZhen China

...252 Field Effect Transistor High Current Transistor types MOSFETs can be of different types, including: Depletion Mode: Normally ON. Applying the VGS would turn it OFF. Enhancement Mode: Normally OFF. Applying the VGS would turn it ON. N-channel MOSFETs: positive voltages and currents. P-channel MOSFETs: negative voltages and currents. Low voltage MOSFETs: BVDSS from 0 V to 200 V. High voltage

Brand Name:INFINEON

Model Number:IPD90N04S4-04

...MOSFET N-CH 40V 90A TO252-3 Manufacturer: Infineon Product Category: MOSFET Technology: Si Mounting Style: SMD/SMT Package / Case: TO-252-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 40 V Id - Continuous Drain Current: 90 A Rds On - Drain-Source Resistance: 4.1 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage...

Brand Name:ONSEMI

Model Number:BSS138LT1G

Place of Origin:Original

... and cordless telephones. Features • Pb−Free Packages are Available • Low Threshold Voltage (VGS(th): 0.5 V−1.5 V) Makes it Ideal for Low Voltage Applications • Miniature SOT−23 Surface Mount Package Saves Board Space NOTES: 1. DIMENSIONING AND

Brand Name:ONSEMI

Model Number:BSS138LT1G

Place of Origin:China

...MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R The ON Semiconductor MOSFET is an N channel MOSFET transistor which operates in enhancement mode. Its maximum power dissipation is 225 mW. The maximum Drain Source Voltage of the product is 50 V and Gate Source Voltage is ±20 V. This MOSFET has an operating temperature range of -55°C to 150°C. Features and Benefits: • Low Threshold Voltage (VGS(th): 0.85 V-1.5 V) Makes it Ideal for Low

Brand Name:Original

Model Number:IPD350N06LG

Place of Origin:Original

...-Source Breakdown Voltage: 60 V Id - Continuous Drain Current: 29 A Rds On - Drain-Source Resistance: 35 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 1.2 V Qg - Gate Charge: 10 nC Minimum Operating Temperature: -

Brand Name:Infineon

Model Number:IPD70N10S3L-12

...: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 100 V Id - Continuous Drain Current: 70 A Rds On - Drain-Source Resistance: 11.5 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 1.7 V

Brand Name:Ti

Model Number:CSD13381F4

CSD13381F4 Mosfet Power Transistor MOSFET 12V N-CH Pwr MOSFET 1 Features Low On-Resistance Low Qg and Qgd Low Threshold Voltage Ultra-Small Footprint (0402 Case Size) – 1.0mm×0.6mm Ultra-Low Profile – 0.35 mm Height Integrated ESD Protection Diode...

Brand Name:Alpha & Omega Semiconductor Inc.

Model Number:AOD4454

Place of Origin:CHINA

... low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current -

Brand Name:JUYI

Place of Origin:China

...MOSFET and IGBT driver 3-Phase High Voltage Gate Driver DESCRIPTION The JY213H is a high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels for 3-phase gate driver. Built-in deadtime protection and Shoot-through protection that prevent half-bridge breakdown. The UVLO circuits prevent malfunction when VCC and VBS are lower than the specified threshold voltage. 600V high-voltage

Brand Name:original

Model Number:LN2306LT1G

...MOSFET NPN Transistor PNP SOT-23(SOT-23-3) LN2306LT1G Products Description: 1. Trans MOSFET N-CH 30V 5.8A 3-Pin SOT-23 T/R 2. Diodes and Rectifiers N-channel 30V 5.8A 3. High Density Cell Design For Ultra Low On-Resistance 4 Advanced trench process technology 30V N-Channel Enhancement-Mode MOSFET Technological Parameters: Drain-source resistance 0.038 Ω polarity N threshold voltage 0.7 V Drain-Source Voltage...

Brand Name:Toshiba

Model Number:TPH2R306NH1,LQ

Place of Origin:Original

... Automotive U-MOSVIII-H Power MOSFETs are 100V N-channel power MOSFETs ideal for automotive applications. They feature low on-resistance with proprietary technology using a Cu connector. They have a narrowed gate threshold voltage range of 2.5V to 3.5V,

Brand Name:Microchip

Model Number:Onsemi

...MOSFET with a maximum drain current of 11A and a low on-state resistance of 0.109 ohms. Specification: Maximum Voltage Rating: 900V Maximum Drain Current: 11A On-State Resistance: 0.109 ohms Gate Threshold Voltage: 4V (typical) Features: High voltage capability Low...

Brand Name:JEUNKEI

Model Number:JY213H

Place of Origin:China

...MOSFET and IGBT driver with three independent high and low side referenced output channels for 3-phase gate driver. Built-in deadtime protection and Shoot-through protection that prevent half-bridge breakdown. The UVLO circuits prevent malfunction when VCC and VBS are lower than the specified threshold voltage. 600V high-voltage...

Brand Name:INFINEON

Model Number:IRF540NSTRLPBF

Place of Origin:Germany

...MOSFET Transistor 100V 44mΩ 33A New Orignal high quality Parameters in details: Advanced HEXFET Power MOSFETs from Packaging: the TO - 263 Type: N channel Continuous drain current (ID) at 25°C: 33A Drain-source voltage (VDSS) : 100V Gate source threshold voltage: 4V @ 250uA Leakage source on resistance: 44 MQ2@16A,10V Maximum power dissipation: 130W Feature Advanced Process Technology Ultra Low...

Place of Origin:PHILIPPINE

Brand Name:Fuji Electric

Model Number:FMH23N50E

...power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Specifications: part no