low vce transistors

Place of Origin:United States

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Brand Name:NXP

Model Number:PBSS5350T,215

Place of Origin:China

...Transistor 40V Voltage 3A Current Low Vce(sat) High Efficiency SOT-223 Package Halogen-Free Pb-Free Robust Performance for Power Switching & Amplification Features • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat • High collector current capability • High collector current gain • Improved efficiency due to reduced heat generation Applications • Power management applications • Low...

Place of Origin:China

Brand Name:ONSEMI

Model Number:NUS5530MN

... in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor,IGBT,PCBA, prototype,BOM Kitting. Sunbeam Electronics has

Brand Name:International Rectifier

Model Number:IRG4BC20FDPBF

Place of Origin:original

...a variety of applications. This module features an insulated-gate bipolar transistor (IGBT) with a freewheeling diode. It is capable of delivering high current control, high switching speeds, and low power losses. With its wide range of operating voltages,

Brand Name:Lingxun

Place of Origin:China

Frequency Low VCE High Power IGBT Faster Switching Speed For Portable Power Station *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: antialiased;}img, picture, video, ...

Brand Name:STANDAR

Model Number:7MBR75UB120-50

Place of Origin:100% new & original

IGBT MODULE (U series) 1200V / 75A / PIM Features · Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motoe ...

Place of Origin:Microsemi Power Products Group

Brand Name:MOT

Model Number:MRF581

...LOW POWER TRANSISTORS Description: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.. Low Noise - 2.5 dB @ 500 MHZ High Gain, Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Effective MacroX Package Applications: Designed for high current, low power, low...

Brand Name:Hua Xuan Yang

Model Number:AOD413A

Place of Origin:ShenZhen China

Small P Channel Mosfet High Side Switch / Low Power Transistor Long Life General Description The AOD413A uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. With the excellent thermal resistance of the DPAK ...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

5G Base Station Low Voltage MOSFET with SGT Process Low Power Loss *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: antialiased; } img, picture, video, canvas, svg...

Brand Name:INFINEON/IR

Model Number:IRGB10B60KDPBF

Place of Origin:Germany

...Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. •

Brand Name:INFINEON/IR

Model Number:IRGB10B60KDPBF

Place of Origin:Germany

...Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. •

Brand Name:ON/Fairchild

Model Number:G40N60UFD

Place of Origin:Original Factory

...Transistor N-Channel with Built in Diode 600V 40A 160W, TO-3P Descriptions: Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Features : • High speed switching • Low saturation voltage : VCE...

Brand Name:onsemi

Model Number:FGH40N60SFD

Place of Origin:Original Factory

...Transistors 600V 40A Field Stop Transistor TO-247-3 290W Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. Features • High Current Capability • Low Saturation Voltage: VCE...

Place of Origin:US

Brand Name:Original

Model Number:MJ2955

...Transistor 2N3055 MJ2955 Silicon Power Transistor Product Detail Packaging Tray Part Status Obsolete Transistor Type PNP Current - Collector (Ic) (Max) 15A Voltage - Collector Emitter Breakdown (Max) 60V Vce Saturation (Max) @ Ib, Ic 3V @ 3.3A, 10A Current - Collector Cutoff (Max) 700µA DC Current Gain (hFE) (Min) @ Ic, Vce...

Brand Name:STMicroelectronics

Model Number:STGWA19NC60HD GWA19NC60HD

Place of Origin:CHINA

...Transistors - IGBTs - Single 31 A, 600 V, very fast IGBT with Ultrafast diode Product details Description : This device is an ultrafast IGBT. It utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features Low on-voltage drop (VCE...

Brand Name:original

Model Number:IKW25T120

Place of Origin:original

IKW25T120 Through Hole IGBT Transistors LOW LOSS DuoPack 1200V 25A ●Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF compared to BUP314D ●Short circuit withstand time – 10s ●Designed for : - Frequency Converters - Uninterrupted ...

Brand Name:Original Factory

Model Number:IXYX110N120C4

Place of Origin:CN

...Transistors TO-247-3 Through Hole Product Description Of IXYX110N120C4 IXYX110N120C4 is high-gain IGBTs optimized for ultra-low conduction losses VCE(sat), and for switching frequency of up to 5kHz. Specification Of IXYX110N120C4 Part Number IXYX110N120C4 Voltage - Collector Emitter Breakdown (Max) 1200 V Current - Collector (Ic) (Max) 310 A Current - Collector Pulsed (Icm) 740 A Vce...

Brand Name:Vishay Semiconductors

Model Number:VS-GT75YF120NT

... gate field stop IGBTs with square RBSOA. The modules feature HEXFRED® low Qrr, low switching energy, and positive VCE(on) temperature coefficient. The devices also have a copper baseplate, low stray inductance design, and are designed and qualified for

Brand Name: USA Inc.

Model Number:PH2369

Place of Origin:CHINA

...Transistor NPN 15V 200mA 500MHz 500mW Through Hole TO-92-3 DESCRIPTION NPN switching transistor in a TO-92 FEATURES • Low current (max. 200 mA) • Low voltage (max. 15 V). APPLICATIONS • High-speed switching. Product Attributes Transistor Type NPN Current - Collector (Ic) (Max) 200mA Voltage - Collector Emitter Breakdown (Max) 15V Vce...

Brand Name:StarPower

Model Number:GD200FFY120C6S

Place of Origin:CHN

...TRANSISTOR IGBT MODULE 1.2KV 309A SEMICONDUCTOR Manufacturer: StarPower Europe AG Product Category: IGBT MODULE RoHS: Details Type: IGBT MODULE Brand: StarPower Operating Supply Voltage: 1.2 V Packaging: Standard Subcategory: IGBT MODULE Description STARPOWER IGBT Power Module provides ultrafast switching speed as well as short circuit ruggedness. It’s designed for the applications such as welding machine and UPS. Features Low VCE