low vcesat igbt modules

Place of Origin:CN

Brand Name:Original Factory

Model Number:IFS100B12N3E4PB11

... Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 countries, customer satisfaction rate: 99.9% !! [Company profile] Shenzhen Mingjiada Electronics Co., Ltd. is an authorized ...

Brand Name:Infineon

Model Number:FS100R12W2T7BOMA1

Place of Origin:Germany

FS100R12W2T7BOMA1 SP005351618 Infineon IGBT Module LOW POWER EASY FS100R12W2T7 Manufacturer: Infineon Product Type: IGBT Modules Configuration: 6-Pack Collector-emitter maximum voltage VCEO: 1.2 kV Collector-emitter saturation voltage: 1.5 V Continuous ...

Brand Name:Infineon Technologies

Model Number:FS50R12W2T4

Place of Origin:CHINA

...Low VCESAT 335W IGBT Module Infineon Technologies 1.EasyPACK Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und NTC 2.Typical Applications Airconditions Motor Drives Servo Drives UPS Systems 3.Electrical Features Low Switching Losses Trench IGBT 4 VCESAT with positive Temperature Coefficient Low VCESAT 4.Mechanical Features Al2O3Substrate for Low...

Brand Name:Infineon

Model Number:FF1500R12IE5

Place of Origin:China

IGBT-modules FF150R12RT4 The half-bridge 34 mm 1200 V, 150 A dual IGBT modules 34mm module Highest reliability Typical Applications • High Power Converters • Motor Drives • UPS Systems Electrical Features • Extended Operation Temperature Tvj op • Low Switching Losses • Low VCEsat • Tvj op = 150°C • VCEsat...

Brand Name:onsemi

Model Number:FGHL75T65LQDTL4

FGHL75T65LQDTL4 FS4 LOW VCESAT IGBT 650V 75A TO2 Product Attributes TYPE DESCRIPTION Category Discrete Semiconductor Products Transistors - IGBTs - Single Mfr onsemi Series - Package Tube Product Status Active IGBT Type Trench Field Stop Voltage - ...

Brand Name:Infineon

Model Number:IKW20N60T

Place of Origin:Original Factory

...IGBT Transistors IKW20N60T 600V 20A 166W Low Loss IGBT Power Transistor Description Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features Lowest VCEsat drop for lower conduction losses Low switching losses Easy parallel switching capability due to positive temperature coefficient in VCEsat...

Brand Name:Semikron

Model Number:SKIIP13AC126V1

Place of Origin:Germany

...IGBT Module Semikron highly reliable new orignal in stock Features Fast Trench IGBTs Robust and soft freewheeling diodes in CAL technology Highly reliable spring contacts for electrical connections UL recognised file no. E63532 Typical Applications Inverterup to 16 kVA Typical motor power 7.5 k Remarks VcEsat...

Brand Name:Infineon Technologies

Model Number:IRG4PH40UD2-EP

Place of Origin:original

IRG4PH40UD2-EP IGBT Power Module - High Performance Reliable Power Solution Product Name: IGBT Power Module – IRG4PH40UD2-EP Specifications: • Package Type: D2-Pak • Vce(on): 600V • Ic: 40A • Vcesat: 1.7V • Fall Time: 25ns • Rise Time: 25ns • Power ...

Brand Name:StarPower

Model Number:GD200FFY120C6S

Place of Origin:CHN

...IGBT MODULE 1.2KV 309A SEMICONDUCTOR Manufacturer: StarPower Europe AG Product Category: IGBT MODULE RoHS: Details Type: IGBT MODULE Brand: StarPower Operating Supply Voltage: 1.2 V Packaging: Standard Subcategory: IGBT MODULE Description STARPOWER IGBT Power Module provides ultrafast switching speed as well as short circuit ruggedness. It’s designed for the applications such as welding machine and UPS. Features Low...

Brand Name:Anterwell

Model Number:PBSS4112PAN

Place of Origin:original factory

...low VCEsat (BISS) transistor General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4112PANP. PNP/PNP complement: PBSS5112PAP. Features and benefits • Very low collector-emitter saturation voltage VCEsat...

Brand Name:original

Model Number:PBSS4160T,215

Place of Origin:Original Manufacturer

...LOW VCESAT MOSFET POWER TRANSISTOR PNP COMPLEMENT PBSS4160T Goods Condition: Brand New Part Status: Active Lead Free / Rohs: Complaint Function: NPN Mounting Type: Surface Mount Package: SOT23 High Light: n channel mosfet transistor , n channel transistor PBSS4160T NPN low VCEsat transistor in a SOT23 plastic package PNP complement to PBSS5160T FEATURES • Low collector-emitter saturation voltage VCEsat...

Model Number:PBSS4112PAN

Place of Origin:original factory

...low VCEsat (BISS) transistor General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4112PANP. PNP/PNP complement: PBSS5112PAP. Features and benefits • Very low collector-emitter saturation voltage VCEsat...

Brand Name:Krunter

Model Number:KHG75H12E4L

Place of Origin:China

KHG75H12E4L IGBT Module for High Voltage and High Frequency Power Distribution in Industries KHG75H12E4L NPT IGBT technology 10μs short circuit capability Low switching losse VCE(sat) with positive temperature coefficient Square RBSOA Low inductance case ...

Model Number:PBSS4160T,215

Place of Origin:CN

PBSS4160T NPN low VCEsat transistor in a SOT23 plastic package PNP complement to PBSS5160T FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency, reduces heat generation • ...

Brand Name:Mitsubishi

Model Number:MDD44-16N1B

Place of Origin:Japan

... Module MDD44-16N1B High Power IGBT Module Electronic components Discrete Semiconductor Modules Phase leg Features / Advantages Package with DCB ceramic Improved temperature and power cycling Planar passivated chips Very low forward voltage drop Very low ...

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG400J2YS40

...IGBT Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: • Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature) • The electrodes are isolated from case. • Low...

Brand Name:Toshiba

Model Number:NH1GG69V250P

Place of Origin:China

NH1GG69V250P IGBT Module 250A High Current 1200V Voltage Low Vce(sat) High Efficiency Robust Isolation 175°C Rating Compact Design for Industrial Drives & UPS Systems Features Dimensions according to ...

Brand Name:ABB

Model Number:FS300R17KE3/AGDR-76C

Place of Origin:FI

...-76C Catalog Description: IGBT FS300R17KE3/AGDR-76C Additional Information ABB Type Designation: FS300R17KE3/AGDR-76C Country of Origin: Finland (FI) Customs Tariff Number: 85049099 Gross Weight: 0.5 kg Invoice Description: IGBT FS300R17KE3/AGDR-76C Made

Categories:IGBT Modules

Country/Region:china

IGBT Module Trench Field Stop Full Bridge 3300 V 1200 A 13000 W Chassis Mount Module

Brand Name:ABB

Model Number:FS300R17KE3/AGDR-76C

Place of Origin:Switzerland

...IGBT MODULE Detail: Manufacture ABB Model FS300R17KE3/AGDR-76C Ordering information FS300R17KE3/AGDR-76C Catalog VFD Spares Description ABB FS300R17KE3/AGDR-76C IGBT MODULE Origin United States (US) HS Code 85389091 Dimension 16cm*16cm*12cm Weight 0.8kg The ABB FS300R17KE3AGDR-76C is a powerful combination of an Insulated-Gate Bipolar Transistor (IGBT) module...