lower gate threshold voltage mosfet

Brand Name:Lingxun

Place of Origin:China

Lower Gate Threshold Voltage MOSFET For Digital Circuits Mosfet Switching *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

Low Threshold Voltage MOSFET with High EAS Capability for DC/DC Converter in Trench/SGT Structure Process *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } ...

Brand Name:IXYS

Model Number:IXTQ130N10T

Place of Origin:original

...: TO-247 Product Description: The IXYS IXTQ130N10T is an N-channel MOSFET with a max drain source voltage of 100V and a max drain current of 130A. This device offers a low RDS(on) of 0.01 Ohm and is housed in a TO-247 package. It is designed for ...

Brand Name:MDP1932

Model Number:MagnaChip

Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V ID = 250μA, VGS = 0V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA Drain Cut-Off Current VGS(th) VDS = 72V, VGS = 0V Gate Leakage Current IGSS VGS = ±20V, VDS = 0V Drain-Source ON ...

Brand Name:Original brand

Model Number:BSZ037N06LS5ATMA1

Place of Origin:Original

Mosfet Power Transistor NVHL040N65S3F M Superfet3 650V TO247 PKG N-Channel Features •OptimizedforhighperformanceSMPS,e.g.syncrec. •100%avalanchetested •Superiorthermalresistance •N-channel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249...

Brand Name:Huixin

Model Number:BC2301

Place of Origin:China

... Converter Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 V Continuous Drain Current ID -2.3 A Pulsed Drain Current IDM -10 A Continuous Source-Drain Diode Current IS

Brand Name:Hua Xuan Yang

Model Number:AP7H03DF

Place of Origin:ShenZhen China

...cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approved. High Voltage Mosfet Transistor Features VDS =

Brand Name:Ti

Model Number:FDT3612

...Mosfet Power Transistor MOSFET 100V NCh PowerTrench General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET...

Categories:Discrete Semiconductors

Country/Region:china

...voltage mosfet For health care,wireless charger Applications: health care, wireless charger PSF70060B is PowerCubeSemi’s second generation of high voltage Super Junction MOSFET with FRD that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge

Brand Name:Anterwell

Model Number:BSM50GP120

Place of Origin:original factory

Stock Offer (Hot Sell) Part No. Quantity Brand D/C Package HIN202CBN 16402 INTERSIL 16+ SOP HIP0082AB 6910 INTERSIL 16+ HSOP HIP4082IP 3469 INTERSIL 15+ DIP-16 HIP4082IPZ 7664 NTERSIL 16+ DIP-16 HJR-3FF-S-Z-24VDC 9641 TIANBO 13+ DIP HJR-3FF-S-Z-5VDC 12765 ...

Brand Name:infineon

Model Number:FF450R12KT4

Place of Origin:china

Product Description: IGBT Power Module - TrenchStop® Series The IGBT Power Module, part of the TrenchStop® series, is a high-performance and reliable device designed for use in various industrial and automotive applications. It is a DC DC converter module...

Brand Name:Infineon

Model Number:IRFB7545PBF

Place of Origin:CHINA

...Product Category Power MOSFET Configuration Single Process Technology HEXFET Channel Mode Enhancement Channel Type N Number of Elements per Chip 1 Maximum Drain Source Voltage (V) 60 Maximum Gate Source Voltage (V) ±20 Maximum Gate Threshold Voltage (V)

Brand Name:onsemi

Model Number:FDC608PZ

Place of Origin:USA

...: P-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 5.8 A Rds On - Drain-Source Resistance: 30 mOhms Vgs - Gate-Source Voltage: - 12 V, + 12 V Vgs th - Gate-Source Threshold Voltage: 1.5 V

Brand Name:JUYI

Place of Origin:China

...MOSFET and IGBT driver 3-Phase High Voltage Gate Driver DESCRIPTION The JY213H is a high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels for 3-phase gate driver. Built-in deadtime protection and Shoot-through protection that prevent half-bridge breakdown. The UVLO circuits prevent malfunction when VCC and VBS are lower than the specified threshold voltage. 600V high-voltage

Place of Origin:PHILIPPINE

Brand Name:Fuji Electric

Model Number:FMH23N50E

...power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Specifications: part no

Brand Name:Original Factory

Model Number:SCTWA60N120G2-4

Place of Origin:CN

...MOSFET Transistors Product Description Of SCTWA60N120G2-4 SCTWA60N120G2-4 N-Channel Power MOSFET is a very high voltage N-channel Power MOSFET designed using the ultimate MDmesh K6 technology. Specification Of SCTWA60N120G2-4 Part Number SCTWA60N120G2-4 Vgs - Gate-Source Voltage: - 10 V, + 22 V Vgs th - Gate-Source Threshold Voltage: 3 V Qg - Gate...

Brand Name:JEUNKEI

Model Number:JY213H

Place of Origin:China

...MOSFET and IGBT driver with three independent high and low side referenced output channels for 3-phase gate driver. Built-in deadtime protection and Shoot-through protection that prevent half-bridge breakdown. The UVLO circuits prevent malfunction when VCC and VBS are lower than the specified threshold voltage. 600V high-voltage...

Brand Name:Vishay Semiconductor

Model Number:SIHF10N40D-E3

...Mosfets EU RoHS Compliant ECCN (US) EAR99 Part Status Active HTS 8541.29.00.95 Automotive No PPAP No Product Category Power MOSFET Configuration Single Channel Mode Enhancement Channel Type N Number of Elements per Chip 1 Maximum Drain Source Voltage (V) 400 Maximum Gate Source Voltage (V) ±30 Maximum Gate Threshold Voltage...

Brand Name:ROHM

Model Number:EM6K1T2R

Place of Origin:Japan

...MOSFET 2N-CH 30V .1A SOT-563-6 Manufacturer: ROHM Semiconductor Product Category: MOSFET Technology: Si Installation style: SMD/SMT Package / Box: SOT-563-6 Transistor polarity: N-Channel Number of channels: 2 Channel Vds-drain-source breakdown voltage: 30 V Id-continuous drain current: 100 mA Rds On-drain-source on-resistance: 7 Ohms Vgs - gate-source voltage: - 20 V, + 20 V Vgs th-gate-source threshold voltage: 1.5 V Qg-gate

Brand Name:INFINEON

Model Number:IPD90N04S4-04

...MOSFET N-CH 40V 90A TO252-3 Manufacturer: Infineon Product Category: MOSFET Technology: Si Mounting Style: SMD/SMT Package / Case: TO-252-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 40 V Id - Continuous Drain Current: 90 A Rds On - Drain-Source Resistance: 4.1 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 4 V Qg - Gate