moly ion implantation in semiconductors

Brand Name:JINXING

Model Number:Mo1 Moly Implanted Ion Parts

Place of Origin:CHINA

... material ion implantation. Many nitrogen ion implantation cannot be achieved, but metal ion implantation can be achieved very well. However, the traditional ion implanter is based on the requirement of semiconductor ion implantation, and it is

Brand Name:Sanhui

Model Number:Molybdenum Ion Implantation Part

Place of Origin:China

...be doped into electrons, then accelerate and collide with the semiconductor wafer. Tungsten and molybdenum are usually used to make Ion implantation parts. Molybdenum ion implanted parts, tungsten ion implanted parts, tungsten molybdenum machined parts,

Brand Name:Mingrui

Model Number:XF-1033

Place of Origin:China

Semiconductor Ceramic Chuck / Ceramic End Effector for Deposition and Ion Implant Machine Semiconductor Ceramic Arm Product Description Products : Chucks and wafer end-effectors Chucks and end-effectors are used to manipulate and carry ...

Brand Name:FGD

Model Number:fdg G-008

Place of Origin:China

High Purity 99.95% Pure Moly Molybdenum Bar Rod Applications: Suitable for producing ion implantation parts For producing electric light source parts and electric vacuum components For producing heating elements and refractory parts in high temperature ...

Brand Name:WINNER

Model Number:TW-10

Place of Origin:CHINA

... designed for ultra-high vacuum (UHV) semiconductor manufacturing environments. Certified to SEMI F47-0706 standards, our wire ensures <0.01% outgassing rates at 10^-9 Torr, making it ideal for critical applications in ion implantation systems,

Brand Name:MICH

Model Number:PESWMICPH

Place of Origin:China

...Semiconductor Wafer Mineral Insulated Cable Pedestal Heater is designed and manufactured based on the clients' complete requirement. It is suitable for custom-engineered high-uniformity pedestals for a variety of processes, including CMP, photolithography, ash/strip, deposition, ion implant...

Brand Name:ZMKJ

Model Number:JZ-2inch 3inch 4inch INCH-LNOI

Place of Origin:China

2inch 3inch 4inch LNOI LiNbO3 Wafer Lithium Niobate Thin Films Layer On Silicon Substrate LNOI wafer preparation process is shown below, including the following five steps: (1) Ion Implantation: The ion implantation machine is used to drive high-energy He ...

Brand Name:WPVAC

Model Number:JH-1

Place of Origin:CHINA

... Vapor Deposition For Semiconductor Wafer Processing • Radio Antenna Tuning Matching Circuits • T/R Switches • Pulse Forming Networks • Ion Implant • TWT Power Supplies • MRI Power Supplies • Radar Systems • Security Screening Systems DC

Brand Name:SUPER

Model Number:SP-1100RTP

Place of Origin:China

... is novel and reasonable structure; Has been all kinds of the validation sample experiments, and has been widely used in semiconductor device research and development and production, etc 1.To meet the rapid annealing after ion implantation; 2. Also can be

Brand Name:KYKY

Model Number:CXF-200/1401E

Place of Origin:China

... and scientific instruments, especially to extraction of corrosive gases existing in etch, cvd, pvd and ion implantation and gases easily coagulated at normal temperature. The advantages: 1. Zero friction during operation, and low power consumption 2.

Brand Name:ZG

Model Number:MS

Place of Origin:CHINA

... chemical resistance and low thermal expansion. Multi-bore Alumina Tubes are used to make parts for CVD, ion implants, photolithography, and semiconductor. Specifications of Multi-bore Alumina Tubes Size OD: 1~100 mm Material Al2O3 Purity 99%-99.8% Density

Brand Name:Antaeus

Model Number:AD-B003

Place of Origin:Hunan,China

...ceramic rods have a wide variety of applications: • Used for making parts for CVD, ion implants, photolithography, and semiconductor parts. • In traditional industries, alumina ceramics are ideal for products such as injector tubes, gas nozzles and ...

Brand Name:Feiyinsi

Model Number:ZXW512-6504-3500

Place of Origin:China

...most types of electric lamps, vacuum tubes, and CRTs where the device is either left evacuated or re-filled with a specific gas or gas mixture, semiconductor processing, notably ion implantation, dry etch and PVD, ALD, PECVD and CVD deposition and so on in