mosfet diode transistor

Brand Name:Original

Model Number:IRLML6401TRPBF

Place of Origin:Original

...: Si Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor Polarity: P-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 12 V Id - Continuous Drain Current: 4.3 A ...

Brand Name:Infineon

Model Number:IRLML6401TRPBF

Place of Origin:Shenzhen,China

12V Si MOSFET Diode Transistor Chips IRLML6401TRPBF P-Ch -4.3A 50m Ohm Product description Part number IRLML6401TRPBF is manufactured by Infineon Incorporated Company and distributed by AYE. As one of the leading distributors of electronic products, we ...

Brand Name:vishay/ours

Model Number:ss36

Place of Origin:CHINA

...SMB Surface Mounted Schottky Barrier Rectifier Diode Transistors MOSFET Bridge rectifiers electronic component Name: 3A SS32 SS33 SS34 SS35 SS36 SS39 SS310 SS315 SS320 SMA/DO-214AC package SMD Schottky barrier Rectifier Diode Model No.: SS32 SS33 SS34 SS35...

Brand Name:ST

Model Number:STTH6003CW

Place of Origin:Original

Electronic components STTH6003CW TO-247 mosfet diode new ic chip Model number STTH6003CW Package TO- 247 D/ C 19+ 18+ 17+ Type Diode/ IC chip Condition In stock Email sales07@wtxcapacitors.com More product: Payment and shipping: A. By Express-such as DHL, ...

Brand Name:Hua Xuan Yang

Model Number:4306W-A

Place of Origin:ShenZhen China

...Mosfet Power Transistor For Inverter Systems Management What is a Mosfet Power Transistor ? A power MOSFET is a special type of metal oxide semiconductor field effect transistor. It is specially designed to handle high-level powers. The power MOSFET’s are constructed in a V configuration. Therefore, it is also called as V-MOSFET, VFET. The symbols of N- channel & P- channel power MOSFET are shown in the below figure. Mosfet...

Brand Name:Hua Xuan Yang

Model Number:4306W-A

Place of Origin:ShenZhen China

...Mosfet Power Transistor For Inverter Systems Management What is a Mosfet Power Transistor ? A power MOSFET is a special type of metal oxide semiconductor field effect transistor. It is specially designed to handle high-level powers. The power MOSFET’s are constructed in a V configuration. Therefore, it is also called as V-MOSFET, VFET. The symbols of N- channel & P- channel power MOSFET are shown in the below figure. Mosfet...

Brand Name:onsemi

Model Number:ATP114-TL-H

Place of Origin:United States

ATP114-TL-H P-Channel 60 V 55A (Ta) 60W (Tc) Surface Mount ATPAK Features:ATP114-TL-H Category Single FETs, MOSFETs Mfr onsemi FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 55A...

Brand Name:original

Model Number:SIHB22N60E-E3

Place of Origin:Original Manufacturer

...MOSFET POWER TRANSISTOR SIHB22N60E - E3 600V 21A PACKAGE D2PAK FET Type: N-channel Operating Temperature: -55°C ~ 150°C (TJ) Package: TO263-3 D2PAK High Light: n channel mosfet transistor , n channel transistor High Voltage Single Mosfet Power Transistor SIHB22N60E - E3 600V 21A Package D2PAK MSL 1 SINGLE N-CHANNEL MOSFETS...

Brand Name:original

Model Number:LP2301BLT1G

Original New MOSFET NPN Transistor PNP SOT-23(SOT-23-3) LP2301BLT1G Products Description: 1.MOS (Field Effect Transistor)/LP2301BLT1G Diodes and Rectifiers 2.the material of product compliance withRoHS requirements and Halogen Free 3.S- prefix for ...

Brand Name:/AMPLEON

Model Number:BLF188XR,112

Place of Origin:USA

...Mosfet LDMOS (Dual), Common Source 50V 40mA 108MHz 24.4dB 1400W SOT539A Features eXtremely rugged high-power delivery up to 1400 W Excellent stability under severe mismatch conditions Compact and easy-to-manufacture due to all-planar matching structure Improved Class-C operation due to new dual-sided ESD diode...

Brand Name:Infineon

Model Number:IRF5210PBF

Place of Origin:Original Factory

...Mosfet Power Transistor Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs...

Brand Name:INFEINEON

Model Number:SAK-TC234LP-32F200N AC

Place of Origin:Original Brand

... to you, please let us know. we are pleased to quote you our best price . Thank you ! A diode transistor IC (Integrated Circuit) is a type of electronic component that combines diodes and transistors into a single package. Diodes are electronic components

Model Number:BAS316Z

..., Switching High-speed switching diodes This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for ...

Brand Name:Infineon

Model Number:IRFP90N20DPBF

Place of Origin:Original

Mosfet Power Transistor IRFP90N20DPBF 200V 94A 23mOhm 180nCAC MOSFET Transistor Applications • High frequency DC-DC converters • Lead-Free Description The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide ...

Brand Name:Original Factory

Model Number:MSCSM120HM31CTBL2NG

Place of Origin:CN

...Mosfet Array Transistors Product Description Of MSCSM120HM31CTBL2NG MSCSM120HM31CTBL2NG device is a full bridge 1200 V/79 A silicon carbide (SiC) MOSFET power module. Specification Of MSCSM120HM31CTBL2NG Part Number MSCSM120HM31CTBL2NG Input Capacitance (Ciss) (Max) @ Vds 3020pF @ 1000V Power - Max 310W Operating Temperature -55°C ~ 175°C (TJ) Features Of MSCSM120HM31CTBL2NG SiC Schottky Diode

Brand Name:Lingxun

Place of Origin:China

...MOSFET Power Transistor Anti EMI For SMPS Product Description: One of the standout features of this Super Junction MOSFET is its 100% avalanche testing. This testing ensures that the device can withstand high energy transients, making it an excellent choice for applications that may experience occasional power surges or spikes. In addition, this Super Junction MOSFET...

Brand Name:Infineon Technologies

Model Number:SPW24N60C3

Place of Origin:original

...MOSFET Power Transistor High Power High Efficiency Low On Resistance Parameters: - Drain Source Voltage (VDS): 600V - Drain Current (ID): 24A - Gate Source Voltage (VGS): ±20V - Power Dissipation (PD): 150W - RDS(ON): 0.077Ω - Maximum Junction Temperature (Tj): 150°C - Transistor...

Place of Origin:US

Brand Name:Original

Model Number:IRFZ44N

Product Detail Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 49A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 17.5 ...

Model Number:MBR30100CT

Place of Origin:United States

Brand Name:Original

#detail_decorate_root .magic-0{width:750px}#detail_decorate_root .magic-1{overflow:hidden;width:750px;height:405.95399188092017px;margin-top:0;margin-bottom:0;margin-left:0;margin-right:0}#detail_decorate_root .magic-2{margin-top:-3px;margin-left:0;width:...

Brand Name:Anterwell

Model Number:IRF2907ZS-7PPBF

Place of Origin:original factory

IRF2907ZS-7PPbF HEXFET® Power MOSFET Features • Advanced Process Technology • Ultra Low On-Resistance • 175°C Operating Temperature • Fast Switching • Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for high current, high ...