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All mosfet n channel 30 v wholesalers & mosfet n channel 30 v manufacturers come from members. We doesn't provide mosfet n channel 30 v products or service, please contact them directly and verify their companies info carefully.
| Total 34 products from mosfet n channel 30 v Manufactures & Suppliers |
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Brand Name:Infineon Model Number:STL150N3LLH5 Place of Origin:USA ... Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 150 A Rds On - Drain-Source Resistance: 1.75 mOhms Vgs - Gate-Source Voltage: - ... |
Wisdtech Technology Co.,Limited
Guangdong |
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Brand Name:AOS Model Number:AO3407A Place of Origin:original AO3407A MOSFET Power Electronics Transistors FETs MOSFETs P-Channel 30 V 4.3A 1.4W Surface Mount Package SOT-23-3 FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 4.3A (Ta) Drive... |
Shenzhen Sai Collie Technology Co., Ltd.
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Brand Name:Infineon Model Number:IPC100N04S51R9ATMA1 MOSFET N-CHANNEL 30/40V Product Attribute Attribute Value Select Attribute Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: TDSON-8 Transistor Polarity: N-Channel Number of Channels: 1 Channel... |
QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
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Brand Name:Lingxun Place of Origin:China Model Number:CS20N50A6 ... MAX Typ Typ CS20N50A6 TO-247 N 20 500 ±30 2 4 210 270 Product Description: This N-type MOSFET is capable of handling high voltage, with a gate-source voltage (Vgs) of ±30V. It has been 100% avalanche tested to ensure its reliability and safety in ... |
Guangdong Lingxun Microelectronics Co., Ltd
Guangdong |
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Brand Name:STMicroelectronics Model Number:STP200N3LL Place of Origin:Shenzhen, China ... power loss Distinctive Characteristics : Part No: STP200N3LL Description: MOSFET N-channel 30 V, 2 mOhm typ., 120 A, STripFET H6 Power MOSFET in a TO-220 package Product Category: MOSFET Technology: Si Mounting Style: Through Hole Package / Case: TO-220-3 |
Shenzhen Weitaixu Capacitor Co.,Ltd
Guangdong |
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Model Number:IRFP250NPBF Place of Origin:China Brand Name:original Transistor MOSFET N channel 30A 200V 75MOHM 10V MOS tube IRFP250NPBF Products Description: 1.IRFP250NPBF transistor, MOSFET, N channel, 30 A, 200 V, 75 MoHM, 10 V, 4 V 2.The to-247 package is preferred for Commercial-industrial applications wherehigher ... |
Shenzhen Res Electronics Limited
Guangdong |
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Place of Origin:China Brand Name:ONSEMI Model Number:NTMFS4C020N High Power MOSFET NTMFS4C020N Single N−Channel 30 V 303A 0.9mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in selling the new... |
Sunbeam Electronics (Hong Kong) Limited
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Place of Origin:USA Brand Name:VISHAY Model Number:SI2365EDS ...SI2365EDS - VISHAY - N-Channel 30 V (D-S) MOSFET. Detailed Description of SI2365EDS: EIS Part Number: EIS-SI2365EDS Manufacturer Part Number: SI2365EDS Manufacturer / Brand: VISHAY Brief Description: N-Channel 30 V (D-S) MOSFET Quantity Available: 21790... |
Excellent Integrated System LIMITED (EIS LIMITED)
HongKong |
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Place of Origin:USA Brand Name:VISHAY Model Number:SI2365EDS ...SI2365EDS - VISHAY - N-Channel 30 V (D-S) MOSFET. Detailed Description of SI2365EDS: EIS Part Number: EIS-SI2365EDS Manufacturer Part Number: SI2365EDS Manufacturer / Brand: VISHAY Brief Description: N-Channel 30 V (D-S) MOSFET Quantity Available: 21790... |
Excellent Integrated System LIMITED (EIS LIMITED)
HongKong |
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Brand Name:VISHAY Model Number:SI7336ADP-T1-E3 Place of Origin:Original N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free available • Ultra-Low On-Resistance Using High Density TrenchFET® Gen II Power MOSFET Technology •Qg Optimized • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile • 100 % ... |
ChongMing Group (HK) Int'l Co., Ltd
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Brand Name:Original Factory Model Number:NTMFS4C029NT1G Place of Origin:CN Integrated Circuit Chip NTMFS4C029NT1G MOSFET N-Channel Transistors 30 V 15A 5-DFN Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, ... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Diodes Incorporated Model Number:DMN4800LSSQ-13 Place of Origin:USA DMN4800LSSQ-13 N-Channel 30 V 8.6A (Ta) 1.46W (Ta) Surface Mount 8-SO Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management ... |
Shenzhen Xinyuanpeng Technology Co., Ltd.
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Brand Name:OEM/ODM Place of Origin:China Model Number:STD86N3LH5 Product Description: Our Programmable IC Chip features 8-100 pins and is ideal for data acquisition and DDR memory power applications. This chip offers adjustable current output and can be programmed with a voltage of 2.7V to 5.5V. It is also designed to ... |
STJK(HK) ELECTRONICS CO.,LIMITED
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Brand Name:Anterwell Model Number:SUD40N06-25L Place of Origin:original factory ... Unit Gate-Source Voltage VGS ±20 V Continuous Drain Current (TJ = 175℃)b TC = 25℃ ID 30 A TC=100℃ 30 Pulsed Drain Current IDM 100 A Continuous Source Current (Diode Conduction) IS 34 A Avalanche Current IAR 34 A |
Anterwell Technology Ltd.
Guangdong |
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Brand Name:Huixin Model Number:BC3400 Place of Origin:China ... capability Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±12 V Continuous Drain Current ID 5.8 A Drain Current-Pulsed (note 1) IDM 30 A |
Guangdong Huixin Electronics Technology Co., Ltd.
Guangdong |
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Brand Name:INFINEON Model Number:IRFP4668PBF ...MOSFET N-CH 200V 130A TO247AC Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case: TO-247-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 200 V Id - Continuous Drain Current: 130 A Rds On - Drain-Source Resistance: 9.7 mOhms Vgs - Gate-Source Voltage: - 30 V, + 30... |
HK INTERRA TECHNOLOGY LIMITED
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Brand Name:TOSHIBA Model Number:TK7A90E,S4X ...道模式: Enhancement 商标名: MOSVIII 封装: Tube 商标: Toshiba 配置: Single 下降时间: 15 ns 高度: 15 mm 长度: 10 mm 产品类型: MOSFETs 上升时间: 20 ns 系列: TK7A90E 工厂包装数量: 50 子类别: Transistors 晶体管类型: |
HK NeoChip Technology Limited
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Place of Origin:PHILIPPINE Brand Name:Fairchild Semiconductor Model Number:FDS7079ZN3 ...-cell battery protection and charging, including protection and load switching in notebook computer and notebook battery packs. Applications: • –16 A, –30 V. RDS(ON) = 7.5 mΩ @ VGS = |
Mega Source Elec.Limited
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Brand Name:original Model Number:FCB36N60NTM Place of Origin:original ... Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 600 V Id - Continuous Drain Current: 36 A Rds On - Drain-Source Resistance: 90 mOhms Vgs - Gate-Source Voltage: - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage: |
Walton Electronics Co., Ltd.
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Brand Name:ROHM Model Number:EM6K1T2R Place of Origin:Japan ...MOSFET 2N-CH 30V .1A SOT-563-6 Manufacturer: ROHM Semiconductor Product Category: MOSFET Technology: Si Installation style: SMD/SMT Package / Box: SOT-563-6 Transistor polarity: N-Channel Number of channels: 2 Channel Vds-drain-source breakdown voltage: 30... |
Eastern Stor International Ltd.
Guangdong |