mosfet semiconductor with high voltage

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

...High Voltage MOSFET is a high voltage power MOSFET with embedded FRD HV MOSFET Application. It features low on-resistance and great heat dissipation, making it suitable for motor series, inverter, half bridge/full bridge circuit applications. It is designed with new lateral variable doping technology and special power MOS structure, which ensures excellent characteristics in high...

Brand Name:Infineon Technologies

Model Number:IRFP3206PBF

Place of Origin:original

... N-Channel MOSFET designed for use in high power switching applications. This device offers a 200V drain-source voltage rating and a maximum drain current of 69A. It also provides a low on-resistance of 55mOhm. This MOSFET is suitable for a variety of

Brand Name:Infineon

Model Number:SPA04N80C3XKSA1

Place of Origin:China

...MOSFET 800V Ultra-High Voltage 4A Current Low Rds(on) Super Junction Technology Low Gate Charge High Efficiency Halogen-Free Robust Performance for SMPS andamp; Industrial Drives andnbsp; Features New revolutionary high voltage technology Extreme dv/dt rated High...

Brand Name:MPS

Model Number:MP2451DT-LF-Z

Place of Origin:Original & New

...internal high-side high voltage power MOSFET switching regulator Description The MP2451 is a high frequency (2MHz) stepdown switching regulator with integrated internal high-side high voltage power MOSFET. It provides single 0.6A (or less) highly efficient...

Brand Name:onsemi

Model Number:FDA50N50

Place of Origin:Original Factory

FDA50N50 High Voltage Mosfet 48A 500V DMOS AC−DC Power Supply Transistor Description UniFET MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and...

Brand Name:Hua Xuan Yang

Model Number:19P03 D-U-V

Place of Origin:ShenZhen China

...High Voltage Power Mosfet N Type Transistor Introduction A power MOSFET is a special type of metal oxide semiconductor field effect transistor. It is specially designed to handle high-level powers. The power MOSFET’s are constructed in a V configuration. Therefore, it is also called as V-MOSFET, VFET. The symbols of N- channel & P- channel power MOSFET...

Brand Name:Huixin

Model Number:H10N65

Place of Origin:China

N Channel High Voltage Mosfet 650V 10A High Accuracy RoHS Compliant TO-220F Applications Adapter & Charger SMPS Standby Power AC-DC Switching Power Supply ...

Brand Name:OTOMO

Model Number:1503C1

Place of Origin:ShenZhen China

..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the

Brand Name:VISHAY

Model Number:SIHB22N60E-E3

Place of Origin:CHINA

... N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 21A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 180 mOhm @ 11A, 10V Vgs(th)

Brand Name:ONSEMI

Model Number:MJ15025G

Place of Origin:Mexico

...Mosfet Semiconductor MJ15025G PNP − MJ15023, MJ15025* Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. Features • High Safe Operating Area (100% Tested) −2 A @ 80 V • High...

Brand Name:original

Model Number:SIHB22N60E-E3

Place of Origin:Original Manufacturer

HIGH VOLTAGE SINGLE MOSFET POWER TRANSISTOR SIHB22N60E - E3 600V 21A PACKAGE D2PAK FET Type: N-channel Operating Temperature: -55°C ~ 150°C (TJ) Package: TO263-3 D2PAK High Light: n channel mosfet transistor , n channel transistor High Voltage Single Mosfet Power Transistor SIHB22N60E - E3 600V 21A Package D2PAK MSL 1 SINGLE N-CHANNEL MOSFETS...

Brand Name:HJATIS

Model Number:DFWK-102K

Place of Origin:CHINA

...High Voltage Cable Branch) Fully Sealed Product Description: The inner layer is used to equalize the internal electric field and the outer shield layer is used to protect the cable head from zero potential. The inner layer of the lower end of the stress cone is in close contact with the semiconductor layer of the cable, while the outer semiconductor layer is in close contact with the outer semiconductor

Brand Name:WPVAC

Model Number:JPK-41C334

Place of Origin:CHINA

Small Volume High Voltage Vacuum Relay DC5KV Operating Voltage 30A Current Typical application for Relays: vacuum relays play a vital role when high power and low RF losses are required. • Vapor Deposition For Semiconductor Wafer Processing • Radio ...

Brand Name:ZMSH

Place of Origin:China

...high-power industrial systems is driving demand for semiconductor devices that can handle higher voltages, greater power densities, and improved efficiency. Among wide bandgap semiconductors, silicon carbide (SiC) has emerged as the material of choice due to its wide bandgap, high...

Brand Name:IXYS

Model Number:IXGH24N170

Place of Origin:CHINA

...High Voltage IGBT IXGH24 IGBT 1700V 50A 250W TO247AD Discrete Semiconductor Products Specification:High Voltage IGBT NPT 1700 V 50 A 250 W Through Hole TO-247AD Part number IXGH24N170 Category Discrete Semiconductor Products 　 Transistors - IGBTs - Single Mfr IXYS Series - Package Tube Part Status Active IGBT Type NPT Voltage...

Brand Name:IXYS

Model Number:IXGH24N170

...High Voltage IGBT IXGH24 IGBT 1700V 50A 250W TO247AD Discrete Semiconductor Products Specification:High Voltage IGBT NPT 1700 V 50 A 250 W Through Hole TO-247AD Part number IXGH24N170 Category Discrete Semiconductor Products 　 Transistors - IGBTs - Single Mfr IXYS Series - Package Tube Part Status Active IGBT Type NPT Voltage...

Brand Name:JUYI

Model Number:JY213H

Place of Origin:China

JY213H High Voltage 3-Phase Gate Driver with three independent high and low side referenced output channels DESCRIPTION The JY213H is a high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels for 3-phase ...

Brand Name:ZMSH

Model Number:6Inch SiC Epitaxial Wafer

Place of Origin:CHINA

...High Voltage SiC Epitaxial Wafer Main Introduction 6Inch Ultra-High Voltage SiC Epitaxial Wafer 100–500 μm For MOSFET Devices This product is a high-purity, low-defect silicon carbide (SiC) epitaxial layer with a thickness ranging from 100 to 500 μm, grown on a 6-inch N-type 4H-SiC conductive substrate via high...

Brand Name:UCHI

Model Number:SGM8271/8272/8274

Place of Origin:Dongguan China

High Voltage Rail-to-RailOutput Operational Amplifiers Integrated Circuit IC The SGM8271 (single), SGM8272 (dual) and SGM8274(quad) are high voltage operational amplifiers, whichcan operate from 4.5V to 36V single supply or from±2.25V to ±18V dual power ...

Brand Name:XUYANG

Model Number:2CL77

Place of Origin:China

...High Voltage Diode Silicon Heap Diode 20KV High Frequncy Fast Recovery Diodes Feature: Case: Molded plastic Lead: Axial leads Polarity: Color band denotes cathode end High temperature soldering guaranteed: 260±5℃≯10 seconds；10mm lead Length, 2.3kg tension Semiconductor...